Patents by Inventor Yong Chang

Yong Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110312149
    Abstract: A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.
    Type: Application
    Filed: February 28, 2011
    Publication date: December 22, 2011
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Heon Yong CHANG, Myoung Sub KIM, Gap Sok DO
  • Patent number: 8071968
    Abstract: A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements, heaters, a gate, a second insulation layer, a barrier layer, a phase change layer and top electrodes. The first insulation layer has first holes. The cell switching elements are in the first holes. The heaters are on the cell switching elements. The gate is higher than the cell switching elements. The second insulation layer having second holes which expose the heaters, and exposes a hard mask layer of the gate. The barrier layer is on sidewalls of the second holes and on the second insulation layer. The phase change layer is formed in and over the second holes in which the barrier layer is formed. The top electrodes are formed on the phase change layer.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: December 6, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • Publication number: 20110287602
    Abstract: A phase change memory device includes heaters which are formed in their respective memory cells and vertically positioned stack patterns having phase change layers and top electrodes which are formed to come into contact with the heaters. The heaters have horizontal cross-sectional bent shapes which can have any number of shapes such as a shape similar to that of a boomerang. The horizontal cross-sectional bent shapes of the to heaters are for minimizing the contact area between the heaters and the phase change layer so that programming currents can be reduced or minimized.
    Type: Application
    Filed: July 28, 2011
    Publication date: November 24, 2011
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Heon Yong CHANG
  • Patent number: 8053750
    Abstract: A phase change memory device includes a silicon substrate having a cell region and a peripheral region. A first insulation layer is formed in the cell region and includes a plurality of holes. Cell switching elements are formed in the holes of the first insulation layer and heat sinks are formed on the cell switching elements. The heaters are formed on the center of the heat sinks and spacers are formed on the sidewalls. A gate is formed in the peripheral region of the silicon substrate formed of a gate insulation layer, a first conductive layer, a second conductive layer, and a hard mask layer. A second insulation layer covers the entire surface of the resultant silicon substrate and exposes the spacers and the heaters and the hard mask layer. Finally, a stack pattern of a phase change layer and a top electrode is formed on the heaters.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: November 8, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • Patent number: D651347
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 27, 2011
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651348
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: December 27, 2011
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651748
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651749
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651750
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651751
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651753
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651754
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651756
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651757
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651758
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651759
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651760
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651761
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651762
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang
  • Patent number: D651763
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: January 3, 2012
    Assignee: KMC Exim Corp.
    Inventor: Sung Yong Chang