Patents by Inventor Yong Chang

Yong Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT SOURCE MODULE, BACKLIGHT UNIT AND DISPLAY APPARATUS
    Publication number: 20100259694
    Abstract: A display apparatus having a display and a backlight unit (BLU) which provides backlight to the display are provided. The BLU includes a first light source module in which a plurality of light sources are arranged, a second light source module in which a plurality of light sources are arranged, and a light source driving unit which drives the first light source module and second light source module. The first light source module and second light source module are connected to each other by a first connector.
    Type: Application
    Filed: March 25, 2010
    Publication date: October 14, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-sung KIM, Jeong-il KANG, Hyeong-sik CHOI, Gil-yong CHANG, Young-deok CHOI
  • System for handover in BWA communication system and method thereof
    Patent number: 7813320
    Abstract: A handover method and system in a communication system. In the method, a serving Base Station (BS) broadcasts neighbor BS information including BS identifiers and preamble indices of a plurality of neighbor BSs, receives a handover request message from a Mobile Station (MS), the handover request message including a first set of at least one BS identifier and at least one preamble index for at least one neighbor BS among the plurality of neighbor BSs, and transmits a handover response message to the MS, the handover response message including a second set of at least one BS identifier and at least one preamble index for at least one recommended neighbor BS.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: October 12, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jung-Won Kim, Tae-Won Kim, Bo-Kyung Wang, Yong Chang, Hong-Sung Chang
  • ARTIFICIAL NAIL SETS AND MANUFACTURING METHODS THEREOF
    Publication number: 20100242979
    Abstract: Artificial nail sets are provided. In an embodiment, the artificial nail set includes an artificial nail and an auxiliary member surrounding the outer surface of the artificial nail. The artificial nail has a connecting part formed at one side thereof and the auxiliary member has a coupling portion formed at one side thereof. The auxiliary member is not adherent to the artificial nail. The connecting part of the artificial nail is coupled to the coupling portion of the auxiliary member. In an alternative embodiment, the artificial nail may be directly coupled to the auxiliary member. Due to this coupling, the auxiliary member surrounds the outer surface of the artificial nail. Further provided are methods for manufacturing the artificial nail sets.
    Type: Application
    Filed: June 17, 2009
    Publication date: September 30, 2010
    Inventor: Sung Yong Chang
  • Method for Estimating 3D Pose of Specular Objects
    Publication number: 20100245355
    Abstract: A method estimates a 3D pose of a 3D specular object in an environment. In a preprocessing step, a set of pairs of 2D reference images are generated using a 3D model of the object, and a set of poses of the object, wherein each pair of reference images is associated with one of the poses. Then, a pair of 2D input images are acquired of the object. A rough 3D pose of the object is estimated by comparing features in the pair of 2D input images and the features in each pair of 2D reference images using a rough cost function. The rough estimate is refined using a fine cost function.
    Type: Application
    Filed: March 27, 2009
    Publication date: September 30, 2010
    Inventor: Ju Yong Chang
  • Phase change memory device having decreased contact resistance of heater and method for manufacturing the same
    Patent number: 7804086
    Abstract: A phase change memory device includes a silicon substrate having cell and peripheral regions. A first insulation layer with a plurality of holes is formed in the cell region. Recessed cell switching elements are formed in the holes. Heat sinks are formed in the holes in which the cell switching elements are formed, and the heat sinks project out of the first insulation layer. A gate is formed in the peripheral region and has a stack structure of a gate insulation layer, a first gate conductive layer, a second gate conductive layer, and a hard mask layer. A second insulation layer is formed on the surface of the silicon substrate. The second insulation layer has contact holes exposing the heat sinks. Heaters are formed in the contact holes, and stack patterns of a phase change layer and a top electrode are formed on the heaters.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: September 28, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • Phase change memory device and method for manufacturing the same
    Patent number: 7799596
    Abstract: A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the first oxide layer including the lower electrode, the second oxide having a hole for exposing a part of the lower electrode; a phase change layer formed on a surface of the hole with a uniform thickness so as to make contact with the lower electrode; and an upper electrode formed in the hole and on a part of the second oxide layer, the part being adjacent to the hole.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: September 21, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Heon Yong Chang, Suk Kyoung Hong, Hae Chan Park
  • PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND A METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100227439
    Abstract: A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.
    Type: Application
    Filed: May 18, 2010
    Publication date: September 9, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventor: Heon Yong CHANG
  • PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND A METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100227440
    Abstract: A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.
    Type: Application
    Filed: May 18, 2010
    Publication date: September 9, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Heon Yong CHANG
  • Phase change memory device preventing contact loss and method for manufacturing the same
    Patent number: 7785923
    Abstract: A phase change memory device includes a silicon substrate having a phase change cell region. A plurality of phase change cell are formed in the phase change region of the silicon substrate. A contact comprising a first contact and a second contact is formed on each of the phase change cells. A plurality of bit lines are electrically connected to the contacts. A contact plug is formed on the silicon substrate in a region outside of the phase change cell region, and a word line is formed over the silicon substrate and is connected to the contact plug.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: August 31, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Heon Yong Chang, Sang Heon Kim
  • Phase change memory device having a uniform set and reset current
    Patent number: 7778059
    Abstract: A phase change memory device having a uniform set and reset current includes a first and second sense amplifiers that are respectively placed adjacent to both ends of a plurality of active regions. The active regions include a first active region and a second active region. The first active region has a first area having a first width, a second area having a second width greater than the first width, and a third area having a third width greater than the second width and are sequentially arranged in a direction extending toward an area adjacent to the first sense amplifier. The second active region has a first area having a first width, a second area having a second width greater than the first width, and a third area having a third width greater than the second width, which are sequentially arranged in a direction extending toward an area adjacent to the second sense amplifier.
    Type: Grant
    Filed: September 13, 2007
    Date of Patent: August 17, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventor: Heon Yong Chang
  • Apparatus and method for using automatic repeat request scheme in a broadband wireless access communication system
    Patent number: 7773524
    Abstract: An apparatus and method for using an Automatic Repeat reQuest (ARQ) in a Broadband Wireless Access (BWA) communication system are provided. In a transmitting method of a wireless communication system, a Media Access Control (MAC) layer creates a packet and transmits it to a physical layer, the physical layer generates a Hybrid ARQ (HARQ) burst using the packet received from the MAC layer and transmits it, the physical layer generates a HARQ ending signal and transmits it to the MAC layer when HARQ transmission of the packet is discontinued, and the MAC layer drives an ARQ retransmission timer for the packet in response to the HARQ ending signal.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: August 10, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Geun-Hwi Lim, Joon-Ho Park, Bo-Kyung Wang, Yong Chang
  • ARTIFICIAL NAIL AND MANUFACTURING METHOD THEREOF
    Publication number: 20100186761
    Abstract: An artificial nail is provided. The artificial nail comprises a nail body. The nail body has indicating portions formed in the widthwise direction thereof. The indicating portions have a different surface roughness from the other portions. The indicating portions serve as guidelines when a user cuts the nail body attached to his/her nail to a desired length. Therefore, the indicating portions allow the user to easily cut the nail body to a desired shape while being in harmony with the length of other artificial nails. Further provided is a method for manufacturing the artificial nail.
    Type: Application
    Filed: January 22, 2010
    Publication date: July 29, 2010
    Inventor: Sung Yong Chang
  • SYSTEM AND METHOD FOR OPTIMIZING HANDOVER IN MOBILE COMMUNICATION SYSTEM
    Publication number: 20100172326
    Abstract: Disclosed are a system and a method for optimizing a handover process in a mobile broadband wireless access system. The method performs handover in a mobile communication system including a mobile subscriber station, a serving base station currently providing service to the mobile subscriber station, and at least one neighbor base stations adjacent to the serving base station. The method includes the steps of receiving a handover request from the mobile subscriber station by the serving base station; instructing the mobile subscriber station to perform handover by the serving base station in response to the handover request from the mobile subscriber station and performing by the mobile subscriber station a network reentry process for fast handover in accordance with information included in a handover instruction from the serving base station.
    Type: Application
    Filed: March 16, 2010
    Publication date: July 8, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung-Won KIM, Bo-Kyung Wang, Yong Chang
  • Method for transmitting and receiving broadcast service data in an OFDMA wireless communication system
    Patent number: 7751305
    Abstract: A method for providing two or more broadcast services in an orthogonal frequency division multiple access (OFDMA) wireless communication system. The method comprises the steps of separately receiving broadcast services to be transmitted, and independently performing coding, interleaving and modulation on the broadcast services according to a required quality for each of the broadcast services; segmenting each of the modulated broadcast signals into minimum transmission units; time-division-multiplexing the segmented broadcast service signals; configuring a frame comprising information on the broadcast service in physical layer transmission information transmitted together with the broadcast service; and transmitting the frame.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: July 6, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Soo Jung, Jung-Je Son, Pan-Yuh Joo, Dae-Gyun Kim, Youn-Sun Kim, Beom-sik Bae, Yu-Chul Kim, Yong Chang
  • CONTACT STRUCTURE, METHOD OF MANUFACTURING THE SAME, PHASE CHANGEABLE MEMORY DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING PHASE CHANGEABLE MEMORY DEVICE
    Publication number: 20100163834
    Abstract: A contact structure, a method of manufacturing the same, a phase-changeable memory device having the same, and a method of manufacturing the phase-changeable memory device are described. The phase-changeable memory device includes: an upper electrode, a bit line, and a bit line contact unit. The upper electrode is on a semiconductor substrate having a phase-change pattern. The bit line is on the upper electrode. The bit line contact unit is interposed between the upper electrode and the bit line and electrically couples together the upper electrode to the bit line. The bit line contact unit includes a main conductive layer, a first and second barrier film. The first barrier film surrounds a bottom portion and a side portion of the main conductive layer. The second barrier film is on the main conductive layer.
    Type: Application
    Filed: June 30, 2009
    Publication date: July 1, 2010
    Inventor: Heon Yong CHANG
  • PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING THERMAL BUDGET AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100163830
    Abstract: A phase-change random access memory (PRAM) is presented which can ensure the integrity of the electrical characteristics of driving transistors even when the PRAM is with a high temperature SEG fabrication process because the fabrication time is minimized. A method of manufacturing the PRAM includes the following steps. After preparing a semiconductor substrate having a cell area and a peripheral area, a junction area is formed in the cell area. Then, a transistor having a gate electrode with a single conductive layer is formed in the peripheral area. Subsequently, a first interlayer dielectric layer is formed at an upper portion of the semiconductor substrate, and then a contact hole is formed by etching the first interlayer dielectric layer to expose a predetermined portion of the junction area. Next, an epitaxial layer is grown in the contact hole.
    Type: Application
    Filed: June 29, 2009
    Publication date: July 1, 2010
    Inventors: Heon Yong CHANG, Keum Bum LEE
  • Modeling Vibration Effects Introduced By Mud Motor
    Publication number: 20100163306
    Abstract: Torsional, axial and lateral vibrations introduced when a mud motor is used with a drilling tool to drill a borehole are calculated using a model. The model includes different computational modules for each of three distinct motor sections: power, transmission and bearing. The resulting calculated vibration effects are used to enhance the drilling tool and drilling operation.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Jahir A. Pabon, Yong Chang, Nathaniel Wicks, Richard Harmer, Yingyu Fang, Xiaoyan Shi
  • Method and system for allocating data bursts in a wireless communication system
    Patent number: 7746765
    Abstract: A method and system for allocating data bursts in a wireless communication system. The system has a frame set by a symbol interval axis and a frequency band axis. The frame includes a first region in which a MAP message is transmitted and a second region to which the data bursts are allocated. A third region based on a symbol interval and a frequency band is set in the second region. The data bursts are sequentially allocated to the third region from a first symbol interval along the frequency band axis.
    Type: Grant
    Filed: December 14, 2005
    Date of Patent: June 29, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Geun-Hwi Lim, Jun-Hyung Kim, Hong-Sung Chang, Yong Chang
  • Synchronization method and system for transmitting voice data in a mobile communication system
    Patent number: 7738505
    Abstract: A method and system for synchronizing transmission/reception timings delayed during transmission/reception of data frames for voice signals in a mobile communication system including a media gateway with a transcoder and a base station controller for exchanging digital voice signals with the media gateway. The media gateway or the base station controller performs synchronization control by detecting synchronization of forward data frames for the voice signals. As the base station controller requests synchronization, the media gateway adjusts transmission timing and acquires synchronization according to the adjusted transmission timing, thereby correctly transmitting/receiving data frames for the voice signals.
    Type: Grant
    Filed: July 12, 2004
    Date of Patent: June 15, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventor: Yong Chang
  • STEP-DOWN CONVERTER AND POWER SUPPLY
    Publication number: 20100141227
    Abstract: A step-down converter is provided. The step-down converter includes a DC-DC converter including a boost capacitor and an NMOS transistor, the DC-DC converter converting an input direct current (DC) voltage to an output DC voltage; and an electric discharge circuit which adjusts the output voltage to be less than or equal to the input voltage.
    Type: Application
    Filed: December 10, 2009
    Publication date: June 10, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyung-wan KIM, Hyeong-sik CHOI, Gil-yong CHANG