Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

Abstract: A side-view type light emitting device includes a package body, a lead frame, and a light emitting diode (LED). The package body has a first surface provided as a mount surface, a second surface disposed on a side opposite to the first surface, and lateral surfaces disposed between the first surface and the second surface. The package body includes a recessed portion disposed on a lateral surface corresponding to a light emitting surface of the lateral surfaces. The lead frame is disposed in the package body. The LED chip is mounted on a bottom surface of the recessed portion. Protrusion parts protruding toward the LED chip are disposed in regions adjacent to the LED chip of facing inner sidewalls of the recessed portion, respectively.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

Abstract: A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.

Abstract: According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.