Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: The present disclosure relates to a console tray for a vehicle capable of increasing a capacity of the tray itself by reducing a rotation radius of a cover of the console tray.

Abstract: A leaf spring assembly for an automobile storage compartment has a hook, a leaf spring, and a spring guide. The hook is coupled to an operating plate. One end portion of the leaf spring is fixedly coupled to the hook. The spring guide is fixedly coupled to a non-operating housing in the state where the other side portion of the leaf spring is coupled to the spring guide so as to elastically deform while being drawn in and out.

Abstract: The present disclosure relates to a console tray for a vehicle capable of increasing a capacity of the tray itself by reducing a rotation radius of a cover of the console tray.

Abstract: A leaf spring assembly for an automobile storage compartment has a hook, a leaf spring, and a spring guide. The hook is coupled to an operating plate. One end portion of the leaf spring is fixedly coupled to the hook. The spring guide is fixedly coupled to a non-operating housing in the state where the other side portion of the leaf spring is coupled to the spring guide so as to elastically deform while being drawn in and out.

Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

Abstract: A data billing system is provided. According to at least one embodiment of the present disclosure, a payload of an IP packet is stored whenever the IP packet is received. When a retransmitted packet retransmitted based on a TCP is received, an attack packet is detected by comparing the stored payload with a payload of the retransmitted packet. This prevents a malicious attack in which a misuser desires to use data transmitted over a mobile communication network free of charge by inserting an attack packet in the payload of the retransmitted packet.

Abstract: Reflection type blank masks are provided. The blank mask includes a substrate having a recessed pattern with a predetermined depth, a reflection layer substantially on the substrate, an absorption layer substantially on the reflection layer, and a resist layer substantially on the absorption layer, wherein the resist layer has a recessed part that is formed by transference of the profile from the recessed pattern.

Abstract: The present invention is directed to a potentiometer having enhanced reliability and durability, capable of being unlimitedly used in a high-temperature environment inside a flying object (air vehicle). Said potentiometer comprises: a consecutive type potentiometer having a structure that a resistor is formed of a material having an excellent stability in a high-temperature environment, and having an excellent surface hardness so as to have a high resistance to damages; and a discrete type potentiometer having a structure that a resistor is protected by a passivation layer, and through holes are formed at the passivation layer for electrical connection with the outside, and the through holes are filled with a conductive material.

Abstract: A cup holder tray for an armrest of an automobile has a tray placed and installed in the armrest of the automobile, and structured by a cup holder which protrudes forward by being unlocked from a lock member formed at a back of a main body with a one-touch operation when a cover provided in a front face is pressed. A stopper is inserted in and pivotally supported at a lid plate of the tray. When a position of the stopper is shifted between the lid plate and the cup holder by a rotation of the stopper due to the weight thereof, a backward movement of the cup holder is restricted or released.

Abstract: A bolting structure of a sub-frame includes a reinforcer mounting the sub-frame through a side member. The reinforcer includes: a reinforcing member disposed to intersect with the side member in a cross shape and bolted, together with the side member, to a lower panel; an inner pipe disposed at the side member from surfaces interfacing between the reinforcing member and the side member; an outer pipe disposed at the reinforcing member from the surfaces interfacing between the reinforcing member and the side member and inserted into the sub-frame; and a bolt bolted to the inner pipe through the outer pipe and fixing the sub-frame.

Abstract: Reflection type blank masks are provided. The blank mask includes a substrate having a recessed pattern with a pretermined depth, a reflection layer substantially on the substrate, an absorption layer substantially on the reflection layer, and a resist layer substantially on the absorption layer, wherein the resist layer has a recessed part that is formed by transference of the profile from the recessed pattern.

Abstract: Reflection-type photomasks are provided. The reflection-type photomask includes a substrate and a reflection layer on a front surface of the substrate. The substrate includes a pattern transfer region, a light blocking region and a border region. A trench penetrates the reflection layer in the border region to expose the substrate. First absorption layer patterns are disposed on the reflection layer in the pattern transfer region, and a second absorption layer pattern is disposed on the reflection layer in the light blocking region. Sidewalls of the trench have a sloped profile. Related methods are also provided.

Abstract: Reflection type blank masks are provided. The blank mask includes a substrate, a reflection layer substantially on the substrate, at least one fiducial mark substantially on the reflection layer, an absorption layer substantially on the at least one fiducial mark and the reflection layer, and a resist layer substantially on the absorption layer.