Abstract: A bolting structure of a sub-frame includes a reinforcer mounting the sub-frame through a side member. The reinforcer includes: a reinforcing member disposed to intersect with the side member in a cross shape and bolted, together with the side member, to a lower panel; an inner pipe disposed at the side member from surfaces interfacing between the reinforcing member and the side member; an outer pipe disposed at the reinforcing member from the surfaces interfacing between the reinforcing member and the side member and inserted into the sub-frame; and a bolt bolted to the inner pipe through the outer pipe and fixing the sub-frame.

Abstract: Reflection type blank masks are provided. The blank mask includes a substrate, a reflection layer substantially on the substrate, at least one fiducial mark substantially on the reflection layer, an absorption layer substantially on the at least one fiducial mark and the reflection layer, and a resist layer substantially on the absorption layer.

Abstract: The present invention is directed to a potentiometer having enhanced reliability and durability, capable of being unlimitedly used in a high-temperature environment inside a flying object (air vehicle). Said potentiometer comprises: a consecutive type potentiometer having a structure that a resistor is formed of a material having an excellent stability in a high-temperature environment, and having an excellent surface hardness so as to have a high resistance to damages; and a discrete type potentiometer having a structure that a resistor is protected by a passivation layer, and through holes are formed at the passivation layer for electrical connection with the outside, and the through holes are filled with a conductive material.

Abstract: A method for fabricating a pellicle of an EUV mask is provided. An insulation layer is formed over a silicon substrate, and a mesh is formed over the insulation layer. A frame exposing a rear surface of the insulation layer is formed by selectively removing a center portion of a rear surface of the silicon substrate. A membrane layer is deposited over the mesh and an exposed top surface of the insulation layer which is adjacent to the mesh. A rear surface of the membrane layer is exposed by selectively removing the portion of the insulation layer which is exposed by the frame.

Abstract: A cup holder tray for an armrest of an automobile rear seat has a tray placed and installed in an armrest of a rear seat, and structured by a cup holder which protrudes forward by being unlocked from a lock member formed at a back of a main body with a one-touch operation when a cover provided in a front face is pressed. A stopper is inserted in and pivotally supported at a lid plate of the tray, and while a position of the stopper is being shifted by a rotation of the stopper due to the weight thereof between the lid plate and the cup holder, a backward movement of the cup holder is restricted and released.

Abstract: A method for fabricating an extreme ultra violet lithography mask includes forming a reflective layer that reflects an extreme ultra violet light on a substrate; forming a capping layer that transmits the extreme ultra violet light on the reflective layer; and forming selectively pores in some region of the capping layer to form a light absorption region that absorbs the extreme ultra violet light.

Abstract: A method for fabricating a pellicle of an EUV mask is provided. An insulation layer is formed over a silicon substrate, and a mesh is formed over the insulation layer. A frame exposing a rear surface of the insulation layer is formed by selectively removing a center portion of a rear surface of the silicon substrate. A membrane layer is deposited over the mesh and an exposed top surface of the insulation layer which is adjacent to the mesh. A rear surface of the membrane layer is exposed by selectively removing the portion of the insulation layer which is exposed by the frame.

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract: A photomask for extreme ultraviolet (EUV) lithography includes: a substrate; a reflection layer disposed over the substrate and reflecting EUV light incident thereto; and an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer and comprising a material having an extinction coefficient (k) to EUV radiation higher than that tantalum (Ta).

Abstract: A substrate processing apparatus includes: a processing room in which a semiconductor substrate may be treated by a process; a cooling unit positioned to cool the processing room, the cooling unit configured to convey cooling fluid; and a temperature-adjusting unit that alters the temperature of the cooling fluid supplied into the cooling unit. The temperature-adjusting unit has a cycling circuit. The cycling circuit has a compressor configured to compress a refrigerant, a condenser configured to condense the compressed refrigerant, an expander configured to expand the condensed refrigerant, the expander including a plurality of expansion valves arranged in parallel, and an evaporator configured to evaporate the expanded refrigerant, the evaporator positioned to cool the cooling fluid.

Abstract: A method for fabricating an extreme ultra violet lithography mask includes forming a reflective layer that reflects an extreme ultra violet light on a substrate; forming a capping layer that transmits the extreme ultra violet light on the reflective layer; and forming selectively pores in some region of the capping layer to form a light absorption region that absorbs the extreme ultra violet light.

Abstract: A photo mask includes a transparent substrate, a light shielding layer pattern over the transparent substrate, and an ion-reaction preventing layer covering the transparent substrate and the light shielding layer pattern.

Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: Disclosed herein is a device for cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: A substrate processing apparatus includes: a processing room in which a semiconductor substrate may be treated by a process; a cooling unit positioned to cool the processing room, the cooling unit configured to convey cooling fluid; and a temperature-adjusting unit that alters the temperature of the cooling fluid supplied into the cooling unit. The temperature-adjusting unit has a cycling circuit. The cycling circuit has a compressor configured to compress a refrigerant, a condenser configured to condense the compressed refrigerant, an expander configured to expand the condensed refrigerant, the expander including a plurality of expansion valves arranged in parallel, and an evaporator configured to evaporate the expanded refrigerant, the evaporator positioned to cool the cooling fluid.

Abstract: Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.

Abstract: Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: A load lock module may include a chamber adapted to receive at least one wafer, a supply tube adapted to supply purging gas into the chamber, an outlet adapted to remove the purging gas from the chamber, and an ejector adapted to provide the purging gas to the surface of the at least one wafer received by the chamber.