Abstract: A semiconductor device includes a polycrystalline semiconductor layer on a substrate, first and second stacks on the polycrystalline semiconductor layer, the first and second stacks extending in a first direction, a separation trench between the first and second stacks and extending in the first direction, the separation trench separating the first and second stacks in a second direction crossing the first direction, and vertical channel structures vertically passing through each of the first and second stacks, wherein the polycrystalline semiconductor layer includes a first grain region and a second grain region in contact with each other, the first and second grain region being adjacent to each other along the second direction, and wherein each of the first and second grain regions includes a plurality of crystal grains, each crystal grain having a longitudinal axis parallel to the second direction.

Abstract: The present invention discloses a method for improving solar energy conversion efficiency using metal oxide photocatalysts having an energy band of core-shell structure for ultraviolet (UV) ray and visible light absorption, comprising a first process of forming a nanoparticle thin film layer; a second process of preparing a core-shell metal oxide on metal oxide nanoparticles by a plasma reaction under a hydrogen and nitrogen gas atmosphere, and a third process of depositing a transition metal on surfaces of core-shell metal oxide nanoparticles to produce a photocatalyst for energy conversion. A great amount of oxygen vacancies is formed in a shell region by the core-shell metal oxide to achieve effects of improving transfer ability of electron-hole pairs excited by light, and extending a wavelength range of absorbable light to a visible light region by changing a band-gap structure.

Abstract: A photomask including monitoring marks is disclosed. In one aspect, the photomask includes a transparent substrate, a mask pattern formed on an upper surface of the transparent substrate, and a monitoring mark having a line width pattern shared with the mask pattern. The monitoring mark is configured to receive a laser beam so as to measure a power state of the laser beam.

Abstract: According to an aspect of the present invention, there is provided A poly-generation system comprising: at least one cylinder which forms a combustion chamber; a piston provided in the cylinder and configured to reciprocate; an engine rotor which comprises an engine magnet and reciprocates in conjunction with the reciprocation of the piston; an engine stator which comprises an engine coil and outputs an electromotive force induced in the engine coil due to interference with the engine magnet to the outside; and a generator which is integrally coupled with the piston and generates electricity using an inertial force generated by the reciprocation of the piston, wherein the generator comprises: an elastic member deformed by the inertial force; a generator rotor which comprises a generator magnet and reciprocates due to the deformation of the elastic member; a generator stator which comprises a generator coil and outputs an electromotive force induced in the generator coil due to interference with the generator

Abstract: In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

Abstract: The present disclosure includes a continuous carbon fiber reinforced thermoplastic plastic composite. The continuous carbon fiber reinforced thermoplastic plastic composite includes a continuous carbon fiber impregnated in thermoplastic resin, and the continuous carbon fiber is a continuous carbon fiber has the width of 4 times to 8 times as wide as the original fiber bundle.

Abstract: The present invention relates to an adhesive film and to a touch panel. According to the present invention, even when the adhesive film is applied to a touch panel, for example, a capacitive touch panel, and directly attached to a conductive layer, the adhesive film effectively prevents the resistance of the conductive layer from being raised and exhibits good heat resistance. In addition, according to the present invention, an adhesive film having superior durability, optical characteristics, cuttability, workability, wettability and resistance to warping is provided.

Abstract: Provided is a method of controlling an uplink noise level in a multi-radio unit (RU) environment in which each RU measures an ordinary noise level using a power monitoring function thereof when there is no user traffic and then controls an uplink noise level based on the ordinary noise level.

Abstract: Disclosed is a method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, which includes rapidly performing hydrogenation and nitrogenation of a metal oxide semiconductor material through an H2/N2 mixed gas plasma treatment in a single process at room temperature, so as to enhance photocatalytic energy conversion efficiency. Specifically, disclosed is a treatment technique in which a plasma ball formed by controlling a mixing ratio of hydrogen gas to nitrogen gas in a range of 1:1 to 1:3 contacts with a surface of a metal oxide material, such that a great amount of oxygen vacancy and nitrogen elements are introduced in the surface of the metal oxide material to improve electron-hole pairs transfer ability thereof and decrease a size of the band-gap. A catalyst including the metal oxide material directly converts the solar energy into a compound by photocatalytic hydrogen generation and CO2 conversion.

Abstract: A display apparatus includes an image sensor, a display panel, a timing controller, and a data driver. The image sensor senses a background image and generates background image data based on the background image. The display panel includes a first group of pixels disposed on a first area of the display panel and a second group of pixels disposed on a second area of the display panel. The timing controller extracts partial image data corresponding to the first area from input image data and partial background image data corresponding to the second area from the first background image data. The data driver generates first data voltages based on the partial image data, generates second data voltages based on the partial background image data, to output the first data voltages to the first group of pixels, and to output the second data voltages to the second group of pixels.

Abstract: Provided is a semiconductor package including a semiconductor chip having one surface on which chip pads are formed, and a redistribution structure formed on the one surface of the semiconductor chip. The redistribution structure includes a redistribution layer connected to the chip pads and a redistribution insulating layer interposed between the semiconductor chip and the redistribution layer. The redistribution insulating layer includes a first insulating portion having a first dielectric constant and a second insulating portion having a second dielectric constant that is different from the first dielectric constant. The first insulating portion and the second insulating portion are connected to each other in a horizontal direction.

Abstract: A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package and the upper semiconductor package while supporting a space therebetween, and an insulation layer disposed at least outside the inter-package connecting portion and filling the space between the lower semiconductor package and the upper semiconductor package, and an electromagnetic shielding layer surrounding lateral and top surfaces of the stacked package.

Abstract: A memory device, including a first memory region including a first substrate, a plurality of first semiconductor devices on the first substrate, and a first interlayer insulating layer covering the plurality of first semiconductor devices; and a second memory region including a second substrate on the first interlayer insulating layer and a plurality of second semiconductor devices on the second substrate, the second substrate including a first region in a plurality of grooves in the first interlayer insulating layer and a second region including grains extending from the first region, the second region being on an upper surface of the first interlayer insulating layer.

Abstract: A hierarchical motion prediction apparatus and method. The hierarchical motion prediction method splits a current frame and a reference frame into pixel groups, changes a pixel location of each pixel group, and selects one pixel, and thus resolutions of the current frame and reference frame are reduced. A motion vector of a down-sampled current block is obtained based on a down-sampled current frame and reference frame, and is expanded to a motion vector of an original resolution based on a down sampling rate.

Abstract: A calibration method for a channel simulator is applied to a large-capacity channel simulator having the interfaces of P base stations and Q terminals so that path loss calibration for P×Q paths is more rapidly and easily performed.

Abstract: A vertical memory device includes a substrate, a channel on the substrate, extending in a vertical direction with respect to a top surface of the substrate, and including a protrusion at a lower portion of the channel, the protrusion extending in a parallel direction with respect to the top surface of the substrate, a semiconductor pattern connecting the protrusion and the substrate, and gate lines stacked and spaced apart from each other in the vertical direction, the gate lines on the protrusion and the semiconductor pattern and surrounding the channel.

Abstract: In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

Abstract: A semiconductor device, a semiconductor package, and an electronic device are provided. The electronic device includes a first semiconductor package disposed on a circuit substrate. A second semiconductor package is provided on the circuit substrate and spaced apart from the first semiconductor package. An insulating electromagnetic shielding structure is provided on the top and the lateral surfaces of the first semiconductor package. A conductive electromagnetic shielding structure is provided on the circuit substrate to cover the first and second semiconductor packages and the insulating electromagnetic shielding structure.

Abstract: Provided are an optical film and a digital pen system including the same. The optical film includes a film layer having fine structures thereon, a coating layer coated on the fine structures to form a dot pattern and having a feature of scattering infrared light, and a matching layer stacked above or below the film layer and having a refractive index matched to a refractive index of the film layer within a predetermined range of errors.

Abstract: An apparatus circulates a coolant in a turbocharger, which includes a first coolant line for supplying the coolant to the turbocharger from a water pump and configured to form a first flow resistance member to increase flow resistance to the coolant flowing through the first coolant line.