Abstract: Disclosed are an optical film and an electronic pen system. The electronic pen system includes: a reflective display configured to display information by using surrounding light; an optical film disposed on the reflective display, and formed with an information pattern including virtual grid lines and a plurality of marks for providing position information by using light reflected from the reflective display; and an electronic pen configured to recognize the information pattern, and transmit a signal for displaying graphic information on the reflective display.

Abstract: Disclosed are a reflective display and an electronic pen system using the same. An information pattern for providing position information is formed at pixels configuring the reflective display, and the information pattern includes virtual grid lines and marks.

Abstract: Provided is a rescue request signal processing device connected with a repeater and including a signal detector configured to detect identification information of a wireless communication terminal from an uplink signal outputted from the wireless communication terminal; a signal strength information generator configured to generate strength information of the uplink signal of the wireless communication terminal when the detected identification information of the wireless communication terminal is identical with identification information of a wireless communication terminal included in a request signal for location information transmitted from a location information requesting device; and a transmitter configured to transmit the strength information of the uplink signal and at least one of location information and identification information of the repeater to a location information server.

Abstract: A semiconductor memory device comprises a memory cell array comprising a plurality of memory cells, and a filling command determiner that receives a command signal and an address signal and determines whether the command signal corresponds to a filling command. Upon determining that the command signal corresponds to a filling command, the filling command determiner connects a first source voltage to a bitline and connects a second source voltage to a complementary bitline corresponding to the bitline. The bitline is connected to a selected memory cell corresponding to the address signal.

Abstract: A method and apparatus for management worn resistive memory cells are presented. A normal read mode or worn memory cell detecting mode are used depending on the wear state of a resistive memory cell. A detection reference point is changed upon wear indication to detect the resistance of the resistive memory cell. The resistance of the resistive memory cell is detected using the changed detection reference point to determine whether or not the resistive memory cell is worn by comparing the detected resistance to a wear reference level.

Abstract: A semiconductor memory device includes at least one memory bank including a plurality of memory cells and a self-refresh controller configured to generate a refresh address and to output a row address for a page to be refreshed based on the refresh address. The semiconductor memory device drives the at least one memory bank based on the row address and selectively refreshes pages in the at least one memory bank in response to the row address.

Abstract: A method and apparatus for management worn resistive memory cells are presented. A normal read mode or worn memory cell detecting mode are used depending on the wear state of a resistive memory cell. A detection reference point is changed upon wear indication to detect the resistance of the resistive memory cell. The resistance of the resistive memory cell is detected using the changed detection reference point to determine whether or not the resistive memory cell is worn by comparing the detected resistance to a wear reference level.

Abstract: A method and apparatus for management worn resistive memory cells are presented. A normal read mode or worn memory cell detecting mode are used depending on the wear state of a resistive memory cell. A detection reference point is changed upon wear indication to detect the resistance of the resistive memory cell. The resistance of the resistive memory cell is detected using the changed detection reference point to determine whether or not the resistive memory cell is worn by comparing the detected resistance to a wear reference level.

Abstract: A multi-level cell (MLC) phase-change memory device divides data into data groups each comprising multiple bits of data, and stores each of the data groups in a selected phase-change memory cell. A data group is stored in a selected phase-change memory cell by applying a pulse current to the selected phase-change memory cell with a pulse current characteristic corresponding to a data value of the data group. The pulse current characteristic can comprise, for instance, a magnitude, downward slope, or duration of the pulse current. Data is read from a selected phase-change memory cell by sensing a voltage of a bitline connected to the selected phase-change memory cell and comparing the sensed voltage simultaneously with a plurality of reference voltages.

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes at least one memory bank including a plurality of memory cells and a self-refresh controller configured to generate a refresh address and to output a row address for a page to be refreshed based on the refresh address. The semiconductor memory device drives the at least one memory bank based on the row address and selectively refreshes pages in the at least one memory bank in response to the row address.

Abstract: A high-voltage sawtooth current driving circuit and a memory device including the same are described. In the high-voltage sawtooth current driving circuit includes a charge pump circuit configured to output a first voltage, a regulating circuit configured to regulate a second voltage using the first voltage output from the charge pump circuit, and a sawtooth current driver configured to generate a sawtooth current in response to the second voltage regulated by the regulating circuit.

Abstract: A semiconductor memory device comprises a memory cell array comprising a plurality of memory cells, and a filling command determiner that receives a command signal and an address signal and determines whether the command signal corresponds to a filling command. Upon determining that the command signal corresponds to a filling command, the filling command determiner connects a first source voltage to a bitline and connects a second source voltage to a complementary bitline corresponding to the bitline. The bitline is connected to a selected memory cell corresponding to the address signal.

Abstract: A method and apparatus for management worn resistive memory cells are presented. A normal read mode or worn memory cell detecting mode are used depending on the wear state of a resistive memory cell. A detection reference point is changed upon wear indication to detect the resistance of the resistive memory cell. The resistance of the resistive memory cell is detected using the changed detection reference point to determine whether or not the resistive memory cell is worn by comparing the detected resistance to a wear reference level.

Abstract: Disclosed is a flash memory device including a memory cell array having memory cells arranged at intersections of word lines and bit lines, such that one bit line is associated with a plurality of memory cells connected in series, a voltage generator configured to generate at least a first selection voltage, a row selection circuit configured to drive the non-selected word lines based on at least the first non-selected voltage, and a control logic circuit configured to control the voltage generator and the row selection circuit, such that the voltage generator generates at least the first non-selection voltage based on a location of a selected memory cell in the plurality of memory cells.

Abstract: The present disclosure provides a counterfeit detector which identifies whether a security document or the like is authentic by irradiating UV rays from UV LEDs onto fluorescent security marks formed on the security document. UV rays emitted from the UV LEDs are independently condensed and reflected, thus enabling a user to more effectively identify the fluorescent security marks that are formed in special shapes using UV fluorescent material.

Abstract: A temperature sensing device includes a current generator to generate a variable current that varies based on temperature, a charge circuit to accumulate charges based on the variable current, and a count logic circuit to generate a count value synchronized to a clock, and to output the count value as temperature data based on a charged voltage of the charge circuit and a reference voltage.

Abstract: A multi-level cell (MLC) phase-change memory device divides data into data groups each comprising multiple bits of data, and stores each of the data groups in a selected phase-change memory cell. A data group is stored in a selected phase-change memory cell by applying a pulse current to the selected phase-change memory cell with a pulse current characteristic corresponding to a data value of the data group. The pulse current characteristic can comprise, for instance, a magnitude, downward slope, or duration of the pulse current. Data is read from a selected phase-change memory cell by sensing a voltage of a bitline connected to the selected phase-change memory cell and comparing the sensed voltage simultaneously with a plurality of reference voltages.

Abstract: Provided is a nonvolatile memory device, a memory system having the same, and a write current control method thereof. The memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device has a plurality of write modes. The memory controller includes a sensor configured to sense environment information of the memory system. The memory controller is configured to select one of the write modes according to the sensed environment information and control the nonvolatile memory device according to the selected write mode. Accordingly, the nonvolatile memory device provides a write current for appropriate current consumption in a write operation.

Abstract: Provided is a rescue request signal processing device connected with a repeater and including a signal detector configured to detect identification information of a wireless communication terminal from an uplink signal outputted from the wireless communication terminal; a signal strength information generator configured to generate strength information of the uplink signal of the wireless communication terminal when the detected identification information of the wireless communication terminal is identical with identification information of a wireless communication terminal included in a request signal for location information transmitted from a location information requesting device; and a transmitter configured to transmit the strength information of the uplink signal and at least one of location information and identification information of the repeater to a location information server.

Abstract: A regulator and a method for regulating include sensing an input voltage at a sensing unit and outputting a sensed voltage to a sensed voltage node. A bypassing unit receives the input voltage, bypassing the sensing unit, and applies the input voltage to the sensed voltage node. A comparison unit compares a the sensed voltage from the sensed voltage node to a reference voltage and outputs a comparison result signal.