Abstract: A high-voltage sawtooth current driving circuit and a memory device including the same are described. In the high-voltage sawtooth current driving circuit includes a charge pump circuit configured to output a first voltage, a regulating circuit configured to regulate a second voltage using the first voltage output from the charge pump circuit, and a sawtooth current driver configured to generate a sawtooth current in response to the second voltage regulated by the regulating circuit.

Abstract: A temperature sensing device includes a current generator to generate a variable current that varies based on temperature, a charge circuit to accumulate charges based on the variable current, and a count logic circuit to generate a count value synchronized to a clock, and to output the count value as temperature data based on a charged voltage of the charge circuit and a reference voltage.

Abstract: A memory device having a multi-layer structure, the memory device includes a first semiconductor layer including at least one memory cell array. The memory cell array includes a plurality of memory cells. A second semiconductor layer is on the first semiconductor layer. The second semiconductor layer includes a bit line and a page buffer connected to the bit line corresponding to the memory cell array. The memory device also includes a contact between the first semiconductor substrate and the second semiconductor substrate to connect the page buffer with the memory cell array.

Abstract: Disclosed is a flash memory device including a memory cell array having memory cells arranged at intersections of word lines and bit lines, such that one bit line is associated with a plurality of memory cells connected in series, a voltage generator configured to generate at least a first selection voltage, a row selection circuit configured to drive the non-selected word lines based on at least the first non-selected voltage, and a control logic circuit configured to control the voltage generator and the row selection circuit, such that the voltage generator generates at least the first non-selection voltage based on a location of a selected memory cell in the plurality of memory cells.

Abstract: A high voltage generator includes a charge pump generating a high voltage in response to a pumping clock signal, a charge/discharge circuit responsive to the pumping clock signal and charging the high voltage to generate an output voltage, a comparator for comparing the output voltage with a reference voltage to generate a comparison result, and a clock modification circuit adjusting a pumping slope of the charge pump in relation to the comparison result, wherein the clock modification circuit reduces the pumping slope when the high voltage reaches a target voltage level.

Abstract: A regulator and a method for regulating include sensing an input voltage at a sensing unit and outputting a sensed voltage to a sensed voltage node. A bypassing unit receives the input voltage, bypassing the sensing unit, and applies the input voltage to the sensed voltage node. A comparison unit compares a the sensed voltage from the sensed voltage node to a reference voltage and outputs a comparison result signal.

Abstract: A high voltage generator includes a charge pump generating a high voltage in response to a pumping clock signal, a charge/discharge circuit responsive to the pumping clock signal and charging the high voltage to generate an output voltage, a comparator for comparing the output voltage with a reference voltage to generate a comparison result, and a clock modification circuit adjusting a pumping slope of the charge pump in relation to the comparison result, wherein the clock modification circuit reduces the pumping slope when the high voltage reaches a target voltage level.

Abstract: Capacity enhancement schemes are described for forward and reverse links of distributed cellular base stations consisting of a central unit and one or more remote units. In general, in one aspect, reverse link capacity is shared among remote units. The capacity sharing can be determined dynamically. The forward link capacity can also be enhanced by estimating the location of the mobile stations.

Abstract: Capacity enhancement schemes are described for forward and reverse links of distributed cellular base stations consisting of a central unit and one or more remote units. In general, in one aspect, reverse link capacity is shared among remote units. The capacity sharing can be determined dynamically. The forward link capacity can also be enhanced by estimating the location of the mobile stations.

Abstract: An arrayed waveguide grating (AWG) module monitors the quality of a wavelength division multiplexed (WDM) multi-channel optical signal without using a special measurer in a wavelength division multiplexing (WDM) system, and a device monitors a WDM optical signal using the AWG module. The AWG module includes an input waveguide, a first star coupler, an AWG unit, a second star coupler, and an optical power measurer. The input waveguide receives the WDM optical signal via an optical signal transmission medium. The first star coupler splits the power of the received WDM optical signal and transmits split optical signals to waveguides of the AWG unit. The AWG unit processes the split optical signals so that they have phase differences which are proportional to the difference between the lengths of the waveguides included in the AWG unit. The second star coupler focuses the optical signals received from the AWG unit at different locations by causing mutual interference between the received optical signals.

Abstract: There is provided a wavelength stabilizer for stabilizing the wavelength of an optical signal oscillated from a laser diode (LD) in each of a plurality of channel transmitters in a WDM (Wavelength Division Multiplex) optical transmission system.

Abstract: An apparatus and method of monitoring multiple channel signals of a wavelength division multiplexing (WDM) signal in a WDM system. The optical signal monitoring apparatus includes: an optical demultiplexer having 2N+2 output ports, for receiving and demultiplexing by wavelength a wavelength division multiplexing (WDM) signal with N wavelengths, and outputting two output port signals for each channel via the 2N output ports and outputting two adjacent signals via the +2 output ports needed to measure the optical signal noise ratio outside the frequency range of the WDM signal; a signal conversion unit for receiving the output port signals from the optical demultiplexer and converting the received optical output port signals into digital signals; and a signal processing unit for receiving the digital signals and calculating the wavelength and optical power for each channel using the loss characteristics of the two output port signals of each channel.

Abstract: An optical SNR (Signal-to-Noise Ratio) measurer in a wavelength division multiplexing optical transmitting device.