Abstract: Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH3) gas. The etching object layer includes a magnetic material or a phase change material.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: The structure of the present invention comprises a semiconductor substrate and a trench region formed on the semiconductor substrate. The trench region includes an extended funnel portion in the vicinity of the semiconductor substrate surface. A device isolation layer is formed at the trench region. The device isolation layer includes a void formed at a lower level than the funnel portion. The sidewalls of the hard mask pattern and the internal walls of the trench region are etched to form a funnel portion with an extended trench region at the vicinity of the semiconductor substrate surface. Accordingly, the void in the trench region does not extend above a surface of the semiconductor substrate.