Abstract: A brassiere for radiation therapy is disclosed. The brassiere for radiation therapy according to an embodiment of the present disclosure includes a pair of cups configured to cover breasts of a patient; a coupling member positioned between the pair of cups and configured to couple the pair of cups to each other; back bands configured to be in close contact with a back of the patient; and side compression bands, the side compression bands having one ends coupled to the pair of cups at the coupling member, respectively, and the other ends detachably coupled to the back bands, respectively, wherein positions of the breasts of the patient are changed by adjusting positions on the back bands to which the other ends of side compression bands are coupled.

Abstract: Disclosed is an anti-adhesion agent composition which uses a high molecular weight compound having biocompatibility and an oil derived from animals, plants, and minerals so as to improve low viscosity and low strength, which are problems of existing anti-adhesion agents, and prevent adhesion between living tissues. The anti-adhesion composition according to the present disclosure performs a physical barrier function through simple mixing of a polymer material, serving as a physical barrier in its anti-adhesion effect, and a solvent, and remains in the body for a certain period of time, then decomposes, absorbs, and is excreted. The anti-adhesion composition does not interfere with the healing of the wound after surgery, and exhibits an excellent effect of convenient application to the surgical site.

Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: A negative electrode active material for a lithium secondary battery which includes: silicon particles; and a coating layer surrounding respective silicon particles, wherein the silicon particles have a full width at half maximum (FWHM) of peak ranging from 2 to 10 in the particle diameter distribution having an average particle diameter (D50) of 1 ?m to 30 ?m, and the coating layer includes at least one selected from the group consisting of carbon and a polymer. A negative electrode and lithium secondary battery including the negative electrode active material are also disclosed.

Abstract: An encoding/decoding apparatus and method for controlling a channel signal is disclosed, wherein the encoding apparatus may include an encoder to encode an object signal, a channel signal, and rendering information for the channel signal, and a bit stream generator to generate, as a bit stream, the encoded object signal, the encoded channel signal, and the encoded rendering information for the channel signal.

Abstract: Provided is a negative electrode active material for a lithium secondary battery which includes: a silicon-silicon oxide-magnesium silicate composite comprising a silicon oxide (SiOx, 0<x?2) matrix; and silicon (Si) crystal grains, MgSiO3 crystal grains and Mg2SiO4 crystal grains present in the silicon oxide matrix, wherein the MgSiO3 crystal grains have a crystal size of 5-30 nm and the Mg2SiO4 crystal grains have a crystal size of 20-100 nm in the silicon-silicon oxide-magnesium silicate composite, and the content ratio of MgSiO3 crystal grains to Mg2SiO4 crystal grains is 2:1-1:1 on the weight basis. A method for preparing the negative electrode active material for a lithium secondary battery is also provided.

Abstract: Disclosed is an apparatus and method for processing a multichannel audio signal. A multichannel audio signal processing method may include: generating an N-channel audio signal of N channels by down-mixing an M-channel audio signal of M channels; and generating a stereo audio signal by performing binaural rendering of the N-channel audio signal.

Abstract: A negative electrode active material as well as a method of preparing a negative electrode active material which includes preparing a silicon-based compound including SiOx, wherein 0.5<x<1.3; disposing a polymer layer including a polymer compound on the silicon-based compound; disposing a metal catalyst layer on the polymer layer; heat treating the silicon-based compound on which the polymer layer and the metal catalyst layer are disposed; and removing the metal catalyst layer, wherein the polymer compound includes any one selected from the group consisting of glucose, fructose, galactose, maltose, lactose, sucrose, a phenolic resin, a naphthalene resin, a polyvinyl alcohol resin, a urethane resin, polyimide, a furan resin, a cellulose resin, an epoxy resin, a polystyrene resin, a resorcinol-based resin, a phloroglucinol-based resin, a coal-derived pitch, a petroleum-derived pitch, a tar and a mixture of two or more thereof.

Abstract: A silicon-carbon complex comprising carbon-based particles and silicon-based particles, wherein the silicon-based particles are dispersed and positioned on surfaces of the carbon-based particles, the carbon-based particles have a specific surface area of 0.4 m2/g to 1.5 m2/g, and the silicon-based particles are doped with one or more elements selected from the group consisting of Mg, Li, Ca, and Al, and a negative electrode active material for lithium secondary battery comprising the same.

Abstract: Provided is a negative electrode active material including secondary particles assembled from silicon composite primary particles represented by Mg—SiOx (0<x<2) and artificial graphite primary particles, wherein the secondary particles assembled from silicon composite primary particles and artificial graphite primary particles are surface-coated with an amorphous carbon coating layer. The lithium secondary battery using the negative electrode active material can retain conductivity even after charge/discharge and can be prevented from degradation of cycle characteristic.

Abstract: In accordance with an embodiment, a hinge system for a door of vehicle includes a hinge arm configured to be mounted between a vehicle door enclosing a vehicle compartment and a vehicle body frame surround a wall structure that defines the vehicle compartment; and a hinge shaft configured to provide an axis of rotation of the hinge arm, and configured to be located outside the wall structure.

Abstract: A tie hoop untying prevention device of the present invention may comprise: a body part provided in a shape of surrounding the outer side surface and the upper and lower surfaces of a tie hoop and coupled to the tie hoop; a pair of extension parts provided at opposite ends of the body part, respectively, and formed in directions different from each other; separation preventing parts provided on both side surfaces of the body part, respectively, to prevent separation of the tie hoop; and a tying part provided at each of the corners of the body part to prevent vertical and outward movements of the tie hoop when being coupled to the tie hoop.

Abstract: A memory system includes a memory medium and a memory controller. The memory medium has a second address system that is different from a first address system of a host. The memory controller performs a control operation to access the memory medium based on a command from the host. The memory controller is configured to store a second address, corresponding to an address of a read data, when an error of the read data that is outputted from the memory medium is uncorrectable and is configured to repair a region of the memory medium, designated by the second address, when the region of the memory medium that is designated by the second address is repairable.

Abstract: A semiconductor device may be provided. The semiconductor device may be configured to shift storage positions of data and error information on the data to store the data into shifted storage positions based on the address signals having a certain combination being inputted a predetermined number of times.

Abstract: A semiconductor device may be provided. The semiconductor device may be configured to shift storage positions of data and error information on the data to store the data into shifted storage positions based on the address signals having a certain combination being inputted a predetermined number of times.

Abstract: A semiconductor device may be provided. The semiconductor device may be configured to shift storage positions of data and error information on the data to store the data into shifted storage positions based on the address signals having a certain combination being inputted a predetermined number of times.

Abstract: A test apparatus may include transceivers and a global de-skew circuit. In a training mode, the transceivers provide first timing information obtained by delaying a first data signal in the range of up to a preset unit interval based on a clock signal and receive second timing information corresponding to timing differences between a slowest transceiver and the remaining transceivers. In an operation mode, the transceivers provide compensation data to a plurality of DUTs (Devices Under Test) substantially simultaneously. The compensation data may be obtained by delaying a second data signal by multiples of the preset unit interval in response to the second timing information. In the training mode, the global de-skew circuit receives the first timing information, calculates, using the first timing information, the timing differences between the slowest transceiver and the remaining transceivers, and provides the second timing information corresponding to the timing differences to the transceivers.

Abstract: A memory system includes a memory medium and a memory controller. The memory medium has a second address system that is different from a first address system of a host. The memory controller performs a control operation to access the memory medium based on a command from the host. The memory controller is configured to store a second address, corresponding to an address of a read data, when an error of the read data that is outputted from the memory medium is unrepairable and is configured to repair a region of the memory medium, designated by the second address, when the region of the memory medium that is designated by the second address is repairable.

Abstract: A semiconductor system may include: a volatile memory device that stores an address mapping table including mapping information for a non-volatile memory device; and a control device suitable for reading one or more seed values from the volatile memory device before the address mapping table is stored, generating a plurality of random values based on the seed values, and initializing mapping information to the plurality of random values.

Abstract: A memory system may include a memory device comprising a plurality of memory banks, and a memory controller suitable for allocating data of successive logical addresses to the respective memory banks, and controlling read/write operations of the data, wherein the memory controller groups pages of the respective memory banks, and performs a wear-leveling operation based on the read/write operations of the data on each group of the pages.