Abstract: A Delay Locked Loop (DLL) includes a replica delay unit configured to delay an output clock to generate a feedback clock; a phase detector configured to measure a phase difference between the feedback clock and an input clock; a quantization unit configured to quantize the phase difference measured by the phase detector; and a delay unit configured to delay the input clock based on a quantization result from the quantization unit to generate the output clock.

Abstract: An on-die termination circuit includes a reference period signal generation circuit that generates a reference period signal according to a level of a reference voltage, a first period signal generation circuit that generates a first period signal according to a voltage level of a pad, a period comparison circuit that compares a period of the first period signal with a period of the reference period signal and count a plurality of driving signals, and a driver circuit that drives the pad in response to the plurality of driving signals.

Abstract: A voltage regulator with an adaptive bandwidth, including a first buffer chain, a voltage generating unit, a trimming capacitor unit, a second buffer chain, and a control unit. The first buffer chain delays a clock signal using an external voltage as a supply voltage. The voltage generating unit generates a regulated voltage on the basis a reference voltage. The trimming capacitor unit controls a load capacitance of the voltage generating unit. The second buffer chain delays the clock signal using the regulated voltage as a supply voltage. The control unit adjusts the load capacitance by detecting a delay difference of clocks output from the first and second buffer chains.

Abstract: A voltage adjustment circuit of a semiconductor memory apparatus includes a control voltage generating unit configured to distribute an external voltage for selectively outputting a plurality of distribution voltages as a control voltage in response to a control signal, the plurality of the distribution voltages each have different voltage levels, a comparing unit configured to include a voltage supply unit configured to control an external voltage supplied to a first node and a second node if a level of an output voltage is higher than a level of a reference voltage in response to a level of the control voltage, and a detection signal generating unit configured to drop potential levels of the first and second nodes according to the levels of the output voltage and the reference voltage, and to output the potential level of the second node as a detection signal, and a voltage generating unit configured to drive the external voltage according to a potential level of the detection signal and to output the exter

Abstract: A differential signal generation circuit includes: an inverter array configured to sequentially invert an input signal to generate a plurality of delayed signals; and a phase mixer configured to mix a phase of a first delayed signal and a phase of a second delayed signal among the plurality of delayed signals at a preset mixing ratio to generate a first differential signal. The first delayed signal has a first delay from the input signal and the second delayed signal has a second delay from the input signal. The differential signal generation circuit is configured to generate a third delayed signal having a third delay from the input signal corresponding to a medium of the first and second delays, and the third delayed signal is further delayed to generate a second differential signal.

Abstract: A voltage measuring apparatus for a semiconductor integrated circuit includes a first delay unit configured to delay a reference clock in a first region, a second delay unit configured to delay the reference clock in a second region and an analysis unit configured to analyze a difference in voltage level between the regions based on the phases of associated with the delayed clock signals generated by the first and second delay units.

Abstract: A semiconductor memory device includes a delay locked loop circuit that can control input/output timing of data according to a system clock of a high frequency. The semiconductor memory device includes a phase comparator configured to detect a phase difference between an internal clock and a reference clock to output a state signal having a pulse width corresponding to the detected phase difference, a phase adjuster configured to generate a digital code for determining a delay time corresponding to the state signal for locking a phase of the internal clock, a digital-to-analog converter configured to convert the digital code to an analog voltage, and a multiphase delay signal generator configured to delay the internal clock according to a bias voltage corresponding to the analog voltage to feed back the delayed internal clock as the internal clock and generate multiphase delay signals.

Abstract: An interface apparatus for a semiconductor integrated circuit and an interfacing method thereof controls the VOX of differential signals to a target level in response to the differential signals being outputted by an output block. The interface apparatus for a semiconductor integrated circuit includes an output block configured to output differential signals output by an internal circuit a detector configured to detect a timing error of the differential signals; and a controller configured to control a timing of the differential signals output by the internal circuit according to a detection result of the detector.

Abstract: A delay locked loop (DLL) circuit includes a phase detection unit configured to generate a phase detection signal by comparing a phase of a reference clock signal with a phase of a feedback clock signal. An update control apparatus is configured to generate a valid interval signal and an update control signal by determining a difference between the number of first logical values and the number of second logical values of the phase detection signal in response to the reference clock signal. A shift register configured to update a delay value granted to a delay line in response to the update control signal when the valid interval signal is enabled.

Abstract: A signal receiver circuit includes a first level detector for offset-controlling a first output node in response to a pair of first reference signals. A second level detector offset-controls a second output node in response to a pair of second reference signals.

Abstract: A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.

Abstract: A phase detecting circuit includes a first node that outputs a pull-up control signal, a second node that outputs a pull-down control signal, an initializing unit that initializes voltage levels of the first and second nodes in response to a pre-charge signal, a data input unit to which receives a receiver data, a phase comparison unit that compares a phase of a receiver clock and a phase of the receiver data input to the data input unit to control the voltage levels of the first and second nodes, and a charging/discharging unit that charges or discharges electric charges that are applied to the first and second nodes.

Abstract: A DLL circuit for a semiconductor memory apparatus includes a delay line having a coarse delay chain, which has a plurality of coarse delayers connected in series and is inputted with a reference clock signal, and a plurality of fine delayers which receive output clock signals of the respective coarse delayers, and a delay control section for comparing phases of an output clock signal of a final coarse delayer among the coarse delayers with the reference clock signal and generating coarse control signals for controlling the coarse delayers and for comparing phases of an output clock signal of a fine delayer inputted with the output clock signals of the final coarse delayer, as a fine feedback clock signal, with the reference clock signal and generating fine control signals for controlling the fine delayers.

Abstract: A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.

Abstract: A duty cycle correction apparatus includes a fixed delay unit configured to set a fixed delay time to a DLL clock signal and generate a delay rising clock signal; a variable delay unit configured to delay the DLL clock signal in response to a control signal and generate a delay falling clock signal; a duty cycle correction unit configured to generate a correction rising clock signal and a correction falling clock signal that are toggled in conformity with edge timing of the delay rising clock signal and the delay falling clock signal; and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal and generate the control signal.

Abstract: A latency control circuit includes a path calculator configured to calculate a delay value of a path that an input signal is to go through inside a chip and output the delay value as path information, a delay value calculator configured to output delay information representing a delay value for delaying the input signal based on a latency value of the input signal and the path information, and a delayer configured to delay the input signal by a delay corresponding to the delay information.

Abstract: A phase mixer includes a phase mixing unit configured to mix a phase of a first input signal and a phase of a second input signal in response to a phase control signal and output a phase mixed signal whose phase is varied by one or more units of a unit phase value, and a phase value adjusting unit configured to control an operation of the phrase mixing unit so that the unit phase value is adjusted in response to a code signal coding at least one of a process, voltage, or temperature (PVT) variation.

Abstract: A receiver circuit for sensing and transmitting input data in sync with a plurality of clock signals having mutually different phase sequentially enabled comprising a sense amplifier configured to receive, as offset voltages, first signals which can be obtained by amplifying the input data in sync with a first clock signal of the plurality of clock signals, being driven in sync with a second clock signal enabled subsequently to the first clock signal, and outputting second signals, and a discharging controller configured to control a discharging speed of the sense amplifier according to the offset voltages to control a driven speed of the sense amplifier.

Abstract: An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.

Abstract: A sampling circuit for use in a semiconductor device, includes a first sampling unit configured to sample a data signal in synchronism with a reference clock signal and output a first output signal, a second sampling unit configured to sample a delayed data signal in synchronism with the reference clock signal and output a second output signal, and an output unit configured to combine the first and second output signals and output a sampling data signal.