Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same.

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Abstract: A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.

Abstract: A semiconductor package sawing device is provided that includes a semiconductor package sawing unit, an automatic tool providing portion disposed adjacent to the semiconductor package sawing unit, and a semiconductor package alignment portion. The automatic tool providing portion includes a transfer unit for transferring a chuck unit to the semiconductor package sawing unit.

Abstract: A substrate processing method in which processes with respect to substrates are performed comprises: stacking the substrates on a substrate holder disposed in a staking space formed within a lower chamber through a passage formed in a side of the lower chamber, exhausting the stacking space through an auxiliary exhaust port connected to the stacking space, moving the substrate holder into an external reaction tube closing an opened upper side of the lower chamber to provide a process space in which the processes are performed, and supplying a reaction gas into the process space using a supply nozzle connected to the process space and exhausting the process space using an exhaust nozzle connected to the process space and an exhaust port connected to the exhaust nozzle.

Abstract: Disclosed herein is a plane heater that generates heat by using graphene or the like as the conductive heat generation material thereof. The plane heater includes: a nonconductor substrate; a heat generation material applied to the nonconductor substrate; and a pair of electrodes configured to generate resistance heat in the heat generation material. The pair of electrodes include a first electrode configured to be connected to one pole of a power source, and a second electrode configured to be connected to the other pole of the power source. The sectional areas of at least some portions of the first electrode and the second electrode are determined such that a plurality of electric circuits formed by the first electrode, the heat generation material, and the second electrode can have the theoretically same resistance.

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, a substrate processing apparatus that is capable of improving process uniformity on an entire surface of a substrate. The substrate processing apparatus includes a substrate boat in which a substrate is loaded, a reaction tube in which a processing process for the substrate loaded in the substrate boat is performed, a gas supply unit configured to supply a process gas into the reaction tube through an injection nozzle disposed on one side of the reaction tube, a heating unit including a plurality of vertical heating parts, which are disposed along a circumference of the reaction tube outside the reaction tube and configured to divide the circumference to the reaction tube into a plurality of portions so as to independently heat each of the divided portions of the reaction tube, and a control unit configured to control the heating unit.

Abstract: Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.

Abstract: The present invention relates to a heat treatment apparatus for high-quality graphene synthesis, and more particularly, to a heat treatment apparatus for high-quality graphene synthesis capable of more effectively depositing graphene on a catalytic metal film.

Abstract: Provided is a method for multi-supplying gas, the method comprising: installing a control valve and an flow meter on each of a plurality of branch lines branched from a main supply line, in which one or more gases are supplied, and supplying the gas; and providing the gas by adjusting flow of the gas by a controller connected to each of the control valve and the flow meter, wherein the controller has a first control manner, which controls each of the control valves based on a rate of flow measured by the flow meter to required portion flow for each branch line, and the first control manner adjusts an open rate of the control valve if the rate of the measured flow to the required portion flow is not within a predetermined range, and a unit of adjusting the control valve increases or decreases according to a difference between the measured flow and the required portion flow.

Abstract: Provided is a substrate processing apparatus.

Abstract: A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.

Abstract: The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.

Abstract: Provided is an endless rolling apparatus and method, which have improved cooling conditions for producing advanced high strength steel. The endless rolling apparatus includes: a continuous casting machine for casting a slab; and a cooling bed having at least one piece of water-cooling equipment and at least one rolling mill continuously connected to the continuous casting machine, wherein, in the cooling bed, an initial position (S) at which the water-cooling equipment is provided so as to manufacture advanced high strength steel through at least one water-cooling is defined by mathematical formula 1. Here, H is the thickness (mm) of a slab, V is the casting speed (m/sec) of the slab, h is the product thickness (mm), and t is the target arrival time (sec) until entry into the cooling bed.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.

Abstract: Provided is a substrate processing apparatus.

Abstract: The present invention generally relates to concentrated natamycin suspension formulations for inhibition of fungal growth. Specifically, the present invention relates to stable suspension concentrate formulations comprising from about 25% to about 48% w/w natamycin, from about 0.1% to about 10% w/w of an anionic surfactant selected from the group consisting of polyelectrolyte polymers, modified styrene acrylic polymers, dioctyl sodium sulfosuccinates, sodium salts of naphthalene sulfonates, and combinations thereof, and water. The formulations of the present invention contain natamycin as particles which are on average less than 11 microns in diameter and the formulations have a viscosity of less than 1400 centipoise at 21 degrees Celsius.