Abstract: Provided is a substrate processing apparatus.

Abstract: A semiconductor memory device includes a core region for storing data and a peripheral region for controlling the core region. The semiconductor memory device includes a digital noise measurement circuit and an output selection circuit. The digital noise measurement circuit selects a first operation voltage among a plurality of operation voltages based on a voltage selection signal, generates first noise data by digitizing first noise in the first operation voltage based on a plurality of reference voltages, and outputs the first noise data. The plurality of operation voltages are supplied to the core region and the peripheral region. The output selection circuit outputs one of first data and the first noise data based on an output selection signal. The first data is provided from the core region.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing a stacking space in which a substrate is stacked and a process space in which a process with respect to the substrate is performed, a boat including at least one boat frame that vertically stands up, the boat being elevated to move into the stacking space and the process space, a plurality of susceptors disposed on the boat frame and spaced apart from each other along a longitudinal direction of the boat frame, wherein, as the boat moves into the process space, the substrate is successively loaded on a top surface of each of the plurality of susceptors, and at least holder including a vertical rod disposed parallel to the boat frame and a substrate support tip protruding from an inner surface of the vertical rod to support the substrate, wherein, when the boat moves into the process space, the vertical rod relatively moves along the longitudinal direction of the boat frame.

Abstract: A key enrollment method of a physically unclonable function (PUF) circuit including a plurality of PUF cells includes receiving a first level key from PUF cells, performing bit encoding on the first level key using a bit coding table based on Hamming weights of a plurality of bits in the first level key to generate a second level key, storing first helper data associated with the second level key in a non-volatile memory, performing block encoding on the second level key using an error correction code to generate a third level key, and storing second helper data associated with the third level key in the non-volatile memory.

Abstract: The present invention relates to a pharmaceutical composition and a health functional food composition for preventing and treating non-alcoholic fatty liver disease, which comprises red ginseng concentrate having enhanced Compound K as an effective ingredient by using an enzyme conversion technique.

Abstract: The present invention provides a catalyst for the decomposition of a perfluorinated compound containing a halogen acid gas, and a preparation method thereof. According to the present invention, the Ru—P—Al tri-component catalyst for the decomposition of a perfluorinated compound shows an excellent decomposition activity and durability with respect to the decomposition and removal of a perfluorinated compound containing a halogen acid gas, and thus can be used to decompose a chamber cleaning gas, an etchant, a solvent and the like of a perfluorinated compound from the semiconductor manufacturing industry to the LCD processing field. In addition, the present invention can be useful for decomposing and removing a perfluorinated compound discharged in a process using a halogen acid gas such as F2, Cl2, Br2 and the like.

Abstract: The present invention relates to a dermatological drug injecting device, and more particularly, to a dermatological drug injecting device that can use a needle to treat wrinkles, dry skin, scars, freckles, hair loss, etc. on human skin, or to use ink to inscribe images or characters. To achieve said technical aims, a dermatological drug injecting device of the present invention installed on a skin maintenance apparatus comprises: a body portion installed on a fixing portion of a drug injecting device of the skin maintaining apparatus; a connecting driveshaft portion installed on the body portion and moved linearly; an actuating portion installed on the body portion and moved linearly by means of the connecting driveshaft portion; and a needle fixing portion installed on the actuating portion.

Abstract: Provided are a data receiver circuit and a method of adaptively controlling an equalization coefficient using the same. The data receiver circuit includes n sampling receivers, n decision feedback equalizer (DFE) circuits, and a data recovery circuit. The n sampling receivers are configured to sample an input signal and output n respective sampling signals in response to n respective clock signals. The n DFE circuits are configured to equalize the n respective sampling signals in response to a DFE control signal and generate n respective pre-recovery signals in response to the n equalized sampling signals and n respective previous pre-recovery signals, the DFE control signal for changing an equalization ability of the n DFE circuits. The data recovery circuit is configured to select one of the n respective pre-recovery signals, and output the selected n pre-recovery signal as a recovered input signal.

Abstract: The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods

Abstract: An endecryptor and a control device are provided. The endecryptor includes a first SBOX configured to replace first input data with first substitution data, a transformation unit configured to replace the first input data with second substitution data and an output terminal configured to output encrypted or decrypted output data based on the first and second substitution data.

Abstract: A semiconductor memory device includes a core region for storing data and a peripheral region for controlling the core region. The semiconductor memory device includes a digital noise measurement circuit and an output selection circuit. The digital noise measurement circuit selects a first operation voltage among a plurality of operation voltages based on a voltage selection signal, generates first noise data by digitizing first noise in the first operation voltage based on a plurality of reference voltages, and outputs the first noise data. The plurality of operation voltages are supplied to the core region and the peripheral region. The output selection circuit outputs one of first data and the first noise data based on an output selection signal. The first data is provided from the core region.

Abstract: Disclosed are arithmetic devices, a method of a Montgomery parameter calculation thereof and a Montgomery multiplication method thereof. The method of the Montgomery parameter calculation of the arithmetic devices includes detecting a position of a most significant bit (MSB) of a modulus, calculating an initial value using position information about the detected MSB, and calculating an intermediate value and a Montgomery parameter by repeatedly performing a Montgomery addition or a Montgomery multiplication with respect to the initial value.

Abstract: The present invention relates to a carbon dioxide capture apparatus having a temperature swing adsorption mode for selective separation of carbon dioxide from flue gases. The carbon dioxide capture apparatus comprises: a carbon dioxide sorption column including a carbon dioxide adsorption unit in which adsorption of carbon dioxide from flue gases occurs; a carbon dioxide desorption column connected to the carbon dioxide sorption column and including a carbon dioxide desorption unit in which desorption of the adsorbed carbon dioxide occurs; a carbon dioxide absorbent repeatedly adsorbing and desorbing carbon dioxide while circulating through the carbon dioxide sorption column and the carbon dioxide desorption column; and a heat exchange unit in which heat exchange occurs between the absorbent after carbon dioxide adsorption and the absorbent after carbon dioxide desorption.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing a stacking space in which a substrate is stacked and a process space in which a process with respect to the substrate is performed, a boat including at least one boat frame that vertically stands up, the boat being elevated to move into the stacking space and the process space, a plurality of susceptors disposed on the boat frame and spaced apart from each other along a longitudinal direction of the boat frame, wherein, as the boat moves into the process space, the substrate is successively loaded on a top surface of each of the plurality of susceptors, and at least holder including a vertical rod disposed parallel to the boat frame and a substrate support tip protruding from an inner surface of the vertical rod to support the substrate, wherein, when the boat moves into the process space, the vertical rod relatively moves along the longitudinal direction of the boat frame.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber having an inner space in which a substrate transferred from the outside is accommodated, and a process with respect to the substrate is performed, hot-wire heaters disposed in a sidewall of the process chamber, the hot-wire heaters being disposed around the inner space to heat the substrate, and a cooling tube in which a refrigerant supplied from the outside flows, the cooling tube being disposed between the hot-wire heaters along the sidewall of the process chamber.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber having an inner space in which a substrate transferred from the outside is accommodated, and a process with respect to the substrate is performed and a tube type heater disposed around the inner space in a sidewall of the process chamber, the tube type heater having a passage through which a refrigerant supplied from the outside flows.

Abstract: A semiconductor device may include: a bus; first and second function modules configured to communicate via the bus; a first encryption module configured to encrypt first data output from the first function module using a first encryption key to generate first encrypted data; and/or a second encryption module configured to decrypt the first encrypted data using the first encryption key, to output the decrypted first data to the second function module, and to encrypt second data output from the second function module using a second encryption key to generate second encrypted data. A semiconductor device may include: a bus; first and second modules configured to communicate via the bus; and/or an encryption module configured to use different encryption policies for first data, which is output from the first module and stored in a memory, and second data, which is output from the second module and stored in the memory.

Abstract: Provided is a substrate processing apparatus.

Abstract: Provided are a method of manufacturing a lithium silicate-based high-temperature dry sorbent for removing carbon dioxide and a high-temperature dry sorbent. The manufacturing method includes forming a mixed raw material by mixing a lithium precursor, silicon oxide and a metal oxide, obtaining a lithium silicate solid by drying the mixed raw material, and baking the obtained lithium silicate solid.

Abstract: Provided is a vacuum adsorption apparatus and a method of adsorbing a semiconductor package in a vacuum state. The vacuum adsorption apparatus includes a housing having an opening formed on its top surface, a vacuum adsorption unit disposed in the housing, and a stage formed on the opening formed in the housing and including a plurality of holes. A pressure generated from the vacuum adsorption unit is applied to the top surface of the stage through the opening and the plurality of holes.