Abstract: Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.

Abstract: Provided are a method of manufacturing a high silica zeolite using a recovered silica filtrate, and a high silica zeolite manufactured according to the method. To this end, the present invention provides the method of manufacturing the high silica zeolite using the recovered silica filtrate, including manufacturing a solated agglomerated silica from the silica filtrate including a metal salt (step 1); filtering and washing the solated agglomerated silica of step 1 to manufacture a silica cake from which the metal salt is removed (step 2); peptizing the silica cake to manufacture a silica sol (step 3); and manufacturing the high silica zeolite using the silica sol manufactured in step 3 as a silica source (step 4). Further, the present invention provides a high silica zeolite manufactured from a recovered silica filtrate through the manufacturing method and having a Si/Al mole ratio of 5 or more.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having a passage that is defined in one sidewall thereof to load or unload the substrate and upper and lower openings that are respectively defined in upper and lower portions thereof, a chamber cover closing the upper opening of the main chamber to provide a process space that is blocked from the outside to perform the process, a showerhead disposed in the process space, the showerhead having a plurality of spray holes that spray a process gas, a lower heating block on which the substrate is placed on an upper portion thereof, the lower heating block being fixed to the lower opening and having a lower installation space separated from the process space, and a plurality of lower heaters disposed in the lower installation space in a direction parallel to the substrate to heat the lower heating block.

Abstract: An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber having an opened upper side, the chamber having a passage, through which a substrate is accessible, in a side thereof, a chamber cover covering the opened upper side of the chamber to provide an inner space in which a process with respect to the substrate is performed, the chamber cover having a gas supply hole passing through a ceiling wall thereof, an upper antenna disposed on an upper central portion of the chamber cover to generate an electric field in a central portion of the inner space, the upper antenna generating plasma by using a source gas supplied into the inner space, a side antenna disposed to surround a side portion of the chamber cover to generate an electric field in an edge portion of the inner space, the side antenna generating plasma by using the source gas supplied into the inner space, and a gas supply tube connected to the gas supply hole to supply the source gas into the inner space.

Abstract: Provided is a circuit board, which may include a base layer, an adhesive film, a conductive circuit, and a through via. The adhesive film and the conductive circuit may be provided in plurality to be alternately stacked on the base layer. The through via may be formed through soldering. Since the base layer is not damaged during the soldering, the through via may include various conductive materials. The through via makes it possible to easily connect the conductive circuits having different functions to one another. Accordingly, the circuit board may have multi functions. Thicknesses of the conductive circuits may be adjusted to protect the conductive circuits from folding or bending of the base layer. The circuit board having a multi-layered structure can function not only as a fabric or clothes but also as an electronic circuit.

Abstract: Methods for manufacturing a fabric-type circuit board, including: forming a metal plating layer on a base substrate, forming a circuit pattern by etching the metal plating layer, bonding a carrier film on the circuit pattern, and bonding an adhesive film directly below the circuit pattern after removing the base substrate; or bonding an adhesive film to a metal thin film, forming a circuit pattern by etching the metal thin film, and bonding a carrier film on the circuit pattern. In either case, the circuit pattern is transferred to a fabric by bonding the adhesive film to the fabric.

Abstract: A top burner and a cooker having the top burner are provided. The top burner includes a first burner provided with a plurality of flame holes that form flame by combusting mixed gas and a second burner provided with a plurality of flame holes that form flame separated from the flame formed by the flame holes of the first burner by combusting the mixed gas. An arrangement of the flame holes of the first burner is realized in a different shape from an arrangement of the flame holes of the second burner.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing an inner space in which a process with respect to a substrate is performed, a heating plate on which the substrate is placed, the heating plate being fixedly disposed within the chamber, a heater spaced from a lower portion of the heating plate to heat the heating plate, and a lift module lifting the heater.

Abstract: A heat exchanger including a plurality of horizontally arranged tubes, headers to support the tubes and to enable a refrigerant to flow in the tubes, and a corrugated fin horizontally disposed between the tubes, wherein the corrugated fins includes a vertical fin body, flat contact parts formed at an upper part and a lower part of the fin body, the flat contact parts being in surface contact with a top and a bottom of the tubes, and curved contact parts extending from opposite ends of the flat contact parts, the curved contact parts being in surface contact with the sides of the tubes, the fin body includes drainage guides formed outside the flat contact parts in a lateral direction, and each drainage guide includes protruding parts protruding more upward and downward than the flat contact parts.

Abstract: An application processor includes a memory controller, a display block and a power management unit. The memory controller controls an external memory that stores an image signal to be displayed on a display unit. The display block includes an internal frame buffer and a display controller and the display controller controls the image signal to be displayed on the display unit. The power management unit adaptively controls a power mode of the application processor based on a characteristic of the image signal to be displayed and a power control overhead index.

Abstract: A semiconductor package transferring apparatus is disclosed. The apparatus includes a tray that includes a front side and a rear side opposite the front side, the rear side including a plurality of package covering portions that each correspond to the shape of a semiconductor package and that are arranged to align with corresponding package loading portions on a front side of another tray. Each package covering portion has a surface configured to cover a semiconductor chip disposed below the surface. The apparatus further includes an anti-attachment portion disposed on the surface of one or more of the package covering portions. For each package covering portion on which an anti-attachment portion is disposed, the anti-attachment portion protrudes beyond the surface of the package covering portion.

Abstract: Provided is a substrate processing apparatus.

Abstract: The present invention relates to a top burner and a cooker including the top burner. The present invention includes: an outer burner installed on a top surface of a top plate, and provided with a plurality of flame holes to form flames through combusting gas mixture at a perimeter thereof; an inner burner installed on a top surface of the outer burner, and provided with a plurality of flame holes to form flames through combusting gas mixture at a perimeter thereof disposed inward to the perimeter of the outer burner; a plurality of first mixing tubes supplying gas mixture mixed with air inside the outer burner; a second mixing tube supplying gas mixture mixed with air inside the inner burner; and a passage formed through the outer tube, and in which air supplied to combust gas mixture at the flame holes of the inner burner flows. Thus, according to the present invention, the advantages of heating food more efficiently while reducing incomplete combustion of gas mixture can be realized.

Abstract: A multimedia service providing method in a telecommunication network is disclosed. In one embodiment, the method includes (a) communicating, at a message providing server, data with first and second mobile terminals in an Internet protocol (IP) based mobile communication network, (b) receiving, at a message providing server, a short message from the first mobile terminal, wherein the short message indicates that the first mobile terminal requests a multimedia service from the second mobile terminal, and wherein the short message comprises a predetermined header field to determine whether the message requests the multimedia service and (c) transmitting the short message to the second mobile terminal, wherein the transmitted short message is configured to control the second mobile terminal to set a packet data protocol (PDP) session, for performing the multimedia service, with the first mobile terminal.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to substrates is performed includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which the substrates are accessible, in a side thereof, an external reaction tube closing the opened upper portion of the lower chamber to provide a process space in which the process is performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position at which the substrates are stacked within the substrate holder and a process position at which the process with respect to the substrates is performed, a gas supply unit supplying a reaction gas into the process space, and a processing unit disposed outside the external reaction tube to activate the reaction gas, thereby performing the process with respect to the substrates.

Abstract: The present invention relates to an exclusive alloy substrate material for CIGS solar cells. Particularly, the present invention provides a substrate material having a thermal expansion coefficient similar to that of a CIGS layer. The substrate material according to the present invention may prevent damage such as interlayer separation due to differing thermal expansion coefficients from occurring because the substrate material has a thermal expansion coefficient similar to that of the CIGS layer.

Abstract: Provided is a substrate processing apparatus.

Abstract: Disclosed is a carbon dioxide capture system which includes a first carbon dioxide adsorption/desorption section including a first carbon dioxide adsorption section, a first carbon dioxide desorption section connected to the first carbon dioxide adsorption section, and a first carbon dioxide adsorbent circulating through the first carbon dioxide adsorption section and the first carbon dioxide desorption section; and a second carbon dioxide adsorption/desorption section including a second carbon dioxide adsorption section, a second carbon dioxide desorption section connected to the second carbon dioxide adsorption section, and a second carbon dioxide adsorbent circulating through the second carbon dioxide adsorption section and the second carbon dioxide desorption section.