Patents by Inventor Yong Li

Yong Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10504887
    Abstract: The present disclosure provides a method for forming an electrostatic discharge (ESD) protection device, including: providing a substrate including an input region; forming a plurality of fins on the substrate in the input region; forming a well region, doped with first-type ions, in the plurality of fins and in the substrate; and forming an epitaxial layer on each fin in the input region. The method further includes: forming a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; forming an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and forming a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: December 10, 2019
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Yong Li
  • Publication number: 20190368344
    Abstract: This description relates to computer simulation of physical processes, such as computer simulation of multi-species flow through porous media including the determination/estimation of relative permeabilities for the multi-species flow through the porous media.
    Type: Application
    Filed: July 15, 2019
    Publication date: December 5, 2019
    Inventors: Bernd Crouse, Xiaobo Nie, Raoyang Zhang, Yong Li, Hiroshi Otomo, Hudong Chen, Andrew Fager
  • Publication number: 20190372743
    Abstract: The present invention is designed to control monitoring of DL control channel candidates in sTTIs adequately. A user terminal, according to the present invention, has a receiving section that receives downlink control information (DCI), and a control section that controls monitoring of DL control channel candidates in sTTIs based on the DCI. When the DCI is not detected, the control section assumes that the monitoring of DL control channel candidates in the sTTIs is activated.
    Type: Application
    Filed: January 12, 2018
    Publication date: December 5, 2019
    Applicant: NTT Docomo, Inc.
    Inventors: Kazuki TAKEDA, Satoshi NAGATA, Lihui WANG, Liu LIU, Xiaolin HOU, Huiling JIANG, Can LI, Yong Li
  • Publication number: 20190360066
    Abstract: A control method for a roller quenching process of a heavy-piece weight and large-section ultra-heavy plate has a specific heat model, heat transfer coefficient model, temperature field model and correction model. Plate parameters inputted include thickness, length and carbon content, technological procedure, roller speed and acceleration. Measured parameters include tapping temperature, temperature after air cooling and temperature after self-tempering. The temperature field model is used. Specific heat model and the heat transfer coefficient model are invoked for calculating an air cooling stage, water cooling stage and self-tempering stage in sequence. Temperature fields are corrected through the correction model. Simulated results include a group of cooling curves and cooling speed curves at different thicknesses. Practical temperature drop curves and cooling speed curves are obtained in combination with actual production and part of actual debugging process is replaced by model calculation.
    Type: Application
    Filed: November 2, 2018
    Publication date: November 28, 2019
    Inventors: Tianliang FU, Zhaodong WANG, Xiuhua TIAN, Xiangtao DENG, Yong LI, Jiadong LI, Bing HAN, Jun HAN
  • Patent number: 10490561
    Abstract: A Static Random-Access Memory (SRAM) device and its manufacturing method are presented, relating to semiconductor techniques. The SRAM device includes: a substrate; a first semiconductor column for Pull-Up (PU) transistors and a second semiconductor column for Pull-Down (PD) transistors, with both the first and the second semiconductor columns on the substrate; a first separation region, and a gate stack structure. The first separation region is between the first and the second semiconductor columns and comprises a first region and a second region, the gate stack structure comprises a gate dielectric layer comprising a first part and a second part; a P-type work function regulation layer comprising a first area and a second area adjacent to each other; a N-type work function regulation layer comprising a third area and a fourth area adjacent to each other; and a gate on both the P-type and N-type work function regulation layers.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: November 26, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Yong Li
  • Patent number: 10491090
    Abstract: A vibrating motor and an electronic device are disclosed. The vibrating motor comprises a housing formed by an upper housing and a lower housing. A slider portion and a stator portion are accommodated in a cavity enclosed by the housing. The slider portion comprises magnets, spring sheets and a mass block. The mass block has accommodating grooves matching the external contour of the magnets, and the magnets are accommodated in the accommodating grooves. The mass block is connected to the upper housing via the spring sheets, and is suspended inside the housing. The stator portion comprises coils and a basin frame that is made of a magnetic material The basin frame is fixed on the lower housing, and has accommodating structures matching the external contour of the coils. The coils are embedded in the accommodating structures of the basin frame.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: November 26, 2019
    Assignee: Goertek Inc.
    Inventors: Fenglei Zu, Yong Li
  • Patent number: 10491058
    Abstract: A single phase permanent magnet motor includes a stator and a rotor relative to the stator. The stator includes a stator core with a winding wound therearound. The stator core includes stacked first and second stator core laminations. The first stator core lamination includes a plurality of first pole shoes. The second stator core lamination includes a plurality of second pole shoes. The structures of the first pole shoes and the second pole shoes are different. The first pole shoes and the second pole shoes are stacked substantially along the axial direction of the motor. The present invention reduces vibration and noise caused by the use of a single type of core laminations in the prior art.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: November 26, 2019
    Assignee: JOHNSON ELECTRIC INTERNATIONAL AG
    Inventors: Yue Li, Chui You Zhou, Yong Wang, Yong Li
  • Patent number: 10490663
    Abstract: The present disclosure provides N-type fin field-effect transistors. An N-type fin field-effect transistor includes a semiconductor substrate; at least one fin having a first side surface and a second side surface formed over the semiconductor substrate; a gate structure crossing over the fin and formed over the semiconductor substrate; and a source region and a drain region respectively formed on top of the fin at two sides of the gate structure by an ion implantation process on one of the first side surface and the second side surface of the fin at two sides of the gate structure and a thermal annealing process to diffuse doping ions into the other of the first side surface and the second side surface of the fin.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: November 26, 2019
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Yong Li
  • Patent number: 10490457
    Abstract: The present disclosure provides FinFET structures and fabrication methods thereof. An exemplary fabrication method includes providing a substrate having a first region and a second region; forming a first well region in first region and a second well region in the second region; forming at least one first fin in the first region and at least one second fin in the second region; forming a first doped layer covering the first fin; forming a second doped layer covering the second fin; forming first doped sidewall spacers on side surfaces of the first fin and second doped sidewall spacers on side surfaces of the second fin by a mask-less etching process; and performing a thermal annealing process to the first doped sidewall spacers and the second doped sidewall spacers to form a third well region in the first fin and a fourth well region in the second fin, respectively.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: November 26, 2019
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Yong Li
  • Publication number: 20190356764
    Abstract: A housing assembly includes: a support including a peripheral side wall and a lug, the peripheral side wall defining a first accommodating space configured to accommodate a dual-camera assembly, and the lug being connected to an outer peripheral side of the peripheral side wall away from the first accommodating space; and a middle frame having a second accommodating space and a groove in communication with the second accommodating space, the support being accommodated in the second accommodating space, and the lug being fitted with the groove. The present disclosure further provides a dual-camera module and a mobile terminal.
    Type: Application
    Filed: August 1, 2019
    Publication date: November 21, 2019
    Inventors: Yi WEI, Yong LI
  • Patent number: 10484974
    Abstract: Embodiments of the present application disclose an uplink resource configuration method, an uplink transmission method, an uplink resource configuration apparatus, and an uplink transmission apparatus. The uplink resource configuration method comprises: determining a first uplink resource configuration associated with a first carrier that performs at least partial uplink transmission with at least one user equipment, wherein the first carrier comprises: respective some uplink sub-frames of at least two physical carriers, and the first carrier is continuous in time; and sending first configuration information associated with the first uplink resource configuration.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: November 19, 2019
    Assignee: BEIJING ZHIGU TECH CO., LTD.
    Inventor: Yong Li
  • Patent number: 10476321
    Abstract: A magnetic core for an electric motor has a ring-shaped yoke, teeth extending outwardly from the yoke, and a tooth tip extending from a distal end of each tooth. The core is formed from curved or coils strip laminations having teeth arranged in tooth groups. Each group has four tooth types arranged sequentially. Each tooth has left and right half tooth tips. The length of the half tooth tips vary according to tooth type. When assembled, first type tooth overlap with third type teeth and second type teeth overlap with fourth type teeth, whereby the opening of the winding slot is narrowed compared to laminations having all identical teeth.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: November 12, 2019
    Assignee: Johnson Electric International AG
    Inventors: Yue Li, Mao Xiong Jiang, Jian Zhao, Yong Wang, Yong Li, Yan Fei Liao, Ying Song Ye, Hai Jun Hua
  • Patent number: 10470066
    Abstract: The present invention is designed so that, in a radio communication system in which a plurality of component carriers (CCs) are used in each small cell within a macro cell, the load of measurements, the amount of information to report and so on in user terminals are reduced. The macro base station of the present invention transmits, to a user terminal, measurement indication information that includes a measurement indication for the received power of a measurement signal of a specific CC in each small cell, and receives, from the user terminal, a measurement report that includes the received power of the measurement signal of the specific CC. Also, the macro base station calculates the received quality of the measurement signals of the plurality of CCs based on the received power of the measurement signal of the specific CC.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: November 5, 2019
    Assignee: NTT DOCOMO, INC.
    Inventors: Hiroki Harada, Liu Liu, Qin Mu, Lan Chen, Lihui Wang, Yong Li, Mugen Peng, Wenbo Wang
  • Publication number: 20190333768
    Abstract: Methods for fabricating a transistor and an electro-static discharge (ESD) device are provided. In a method, a first well area doped with a first well ion is formed in a base substrate. A second well area is doped with a second well ion in the base substrate. The second well area includes a first region adjacent to the first well area. A first ion doping region doped with first ions is formed in the first well area and the first region. A type of the first ions is the same as a type of the first well ion and opposite to a type of the second well ion. A gate structure is formed on a part of the first well area and at least a part of the first region.
    Type: Application
    Filed: July 11, 2019
    Publication date: October 31, 2019
    Inventors: Yong LI, Cheng Qing WEI
  • Publication number: 20190332983
    Abstract: The present invention discloses a business operation mode based on artificial-intelligence+legal-affairs+business-affairs. AI is the empowerment, legal-affairs' main-body, business-affairs' framework. AI characteristics lie-in two-learning or two-experts, including Internet-of-human, Internet-of-things, Internet-of-intelligence; applying AI computer-program to control or improve business-quality. AI+legal-affairs innovation lies-in new-brain or new-procedures, using contract to authorize AI's basic-role in judicial-affairs. Identification or adjudication is made by deep-learning and reinforcement-learning, both priorities accept. Experts separately verify evidence or fact, video-trial, mediate then arbitrate. Expert-database complements expert-system each-other, explains algorithm, and promotes reconciliation. Financial-experts control credit-limit and perform-contract through guarantee insurance.
    Type: Application
    Filed: July 10, 2019
    Publication date: October 31, 2019
    Inventors: Ahe Li, Xianda Li, Hongyun Ren, Jiaxin Li, Yong Li, Yangyang Zhang, Yuanyuan Li
  • Patent number: 10456822
    Abstract: A tandem water spot cooling device for a top die. The device includes a spot cooling device main body, a lower sealing plate, an outer-ring circular track, an inner-ring serpentine passage, outer-ring flow dividing baffles, inner-ring flow dividing baffles, outer-ring through holes, inner-ring through holes, bolt hole reservation positions, stripper rod reservation positions, and water inlet and outlet connection through holes.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: October 29, 2019
    Assignee: CITIC Dicastal CO., LTD
    Inventors: Lin Zhu, Changhai Li, Hongbiao Li, Yong Li
  • Patent number: 10461590
    Abstract: A single phase permanent magnet motor includes a stator. The stator includes a stator core and windings. The stator core includes a ring portion, tooth bodies extending radially from the ring portion, and a pole shoe extending from a distal end to two circumferential sides of each tooth body. Each pole shoe defines a positioning slot. A center of each positioning slot is offset from a center of symmetry of one adjacent tooth body so that a torque fluctuation of an output torque of the single phase permanent magnet motor during operation is less than 50%. As a result, the motor vibration and noise are small.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: October 29, 2019
    Assignee: Johnson Electric International AG
    Inventors: Yue Li, Jie Chai, Chui You Zhou, Tao Zhang, Yong Wang, Yong Li
  • Patent number: 10461618
    Abstract: A PMDC motor has a housing, a stator magnet disposed in an interior of the housing, and a rotor core disposed within the stator magnet. A ratio of an outer diameter of the rotor core to the outer diameter of the housing is from 0.60 to 0.67. The noise of the motor during operation is reduced by increasing the thickness of the stator magnet, reducing the outer diameter of the rotor core, reducing the air gap between the magnet and the rotor core and reducing the rotational inertia of the rotor core. The motor is particularly suited for use in vehicle HVAC systems where low noise is an important requirement.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: October 29, 2019
    Assignee: Johnson Electric International AG
    Inventors: Yue Li, Chui You Zhou, Gang Li, Yong Wang, Yong Li, Hong Wei Zhang
  • Patent number: 10461646
    Abstract: A flyback converter control architecture is provided in which primary-only feedback techniques are used to ensure smooth startup and detection of fault conditions. During steady-state operation, secondary-side regulation is employed. In addition, current limits are monitored during steady-state operation using primary-only feedback techniques to obviate the need for a secondary-side current sense resistor.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: October 29, 2019
    Assignee: Dialog Semiconductor Inc.
    Inventors: Yong Li, Cong Zheng, Xiaoyan Wang, Wenduo Liu
  • Publication number: 20190326291
    Abstract: A semiconductor device includes a semiconductor substrate having first and second semiconductor fins, an insulating layer on the semiconductor substrate, the insulating layer including a first recess exposing an upper portion of the first semiconductor fin and a second recess exposing an upper portion of the second semiconductor fin, a gate dielectric layer on the first and second recesses and the exposed upper portions of the first and second semiconductor fins, a first work function adjustment layer on the gate dielectric layer, a functional layer on the first function adjustment layer, and first and second gates on portions of the functional layer of the respective first and second semiconductor fins. The surface area of a lateral opening of the first recess is larger than the surface area of a lateral opening of the second recess.
    Type: Application
    Filed: July 3, 2019
    Publication date: October 24, 2019
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Yong Li, Jian Hua Xu