Abstract: Fin field effect transistors (FinFETs) having various different thicknesses of gate oxides and related apparatuses, methods, and computing systems are disclosed. An apparatus includes first FinFETs, second FinFETs, and third FinFETs. The first FinFETs include a first gate oxide material, a second gate oxide material, and a third gate oxide material. The second FinFETs include the second gate oxide material and the third gate oxide material. The third FinFETs include the third gate oxide material. A method includes forming the first gate oxide material on first fins, second fins, and third fins; removing the first gate oxide material from the second fins and the third fins; forming a second gate oxide material over the first fins, the second fins, and the third fins; and removing the second gate oxide material from the third fins.

Abstract: A power tool includes a housing that defines a battery pack attachment portion, which has a first cavity and a flange. A printed circuit board and a motor are positioned within the housing. The motor is electrically communicates with the printed circuit board. A battery pack receptacle is positioned within the first cavity, is movably coupled to the battery pack attachment portion. The battery pack receptacle includes a groove in which the flange of the battery pack attachment portion is received and a second cavity configured to receive at least a portion of a battery pack. One of a spring or a resilient body is positioned between the battery pack attachment portion and the battery pack receptacle and is configured to bias the battery pack attachment relative to the battery pack receptacle. Power tool terminals are supported by the battery pack receptacle and electrically communicate with the printed circuit board.

Abstract: A method for supporting block coding is provided. The method includes the steps of: determining an arrangement position of a coding block selected by a user on the basis of a sentence component-specific arrangement order specified from a sentence structure of a spoken language; and providing the user with an arrangement result of the coding block specified on the basis of the arrangement position.

Abstract: Fin field effect transistors (FinFETs) having various different thicknesses of gate oxides and related apparatuses, methods, and computing systems are disclosed. An apparatus includes first FinFETs, second FinFETs, and third FinFETs. The first FinFETs include a first gate oxide material, a second gate oxide material, and a third gate oxide material. The second FinFETs include the second gate oxide material and the third gate oxide material. The third FinFETs include the third gate oxide material. A method includes forming the first gate oxide material on first fins, second fins, and third fins; removing the first gate oxide material from the second fins and the third fins; forming a second gate oxide material over the first fins, the second fins, and the third fins; and removing the second gate oxide material from the third fins.

Abstract: A method for supporting block coding is provided. The method includes the steps of: determining an arrangement position of a coding block selected by a user on the basis of a sentence component-specific arrangement order specified from a sentence structure of a spoken language; and providing the user with an arrangement result of the coding block specified on the basis of the arrangement position.

Abstract: Some embodiments include an integrated assembly having a CMOS region with fins extending along a first direction, and with gating structures extending across the fins. A circuit arrangement is associated with the CMOS region and includes a pair of the gating structures spaced by an intervening region having a missing gating structure. The circuit arrangement has a first dimension along the first direction. A second region is proximate to the CMOS region. Conductive structures are associated with the second region. Some of the conductive structures are electrically coupled with the circuit arrangement. A second dimension is a distance across said some of the conductive structures along the first direction. The conductive structures and the circuit arrangement are aligned such that the second dimension is substantially the same as the first dimension. Some embodiments include methods of forming integrated assemblies.

Abstract: One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein the substantially horizontally oriented bottom central surface is positioned a first level above the substrate and the substantially horizontally oriented recessed surface is positioned at a second level above the substrate, wherein the second level is greater than the first level.

Abstract: Some embodiments include an integrated assembly having a CMOS region with fins extending along a first direction, and with gating structures extending across the fins. A circuit arrangement is associated with the CMOS region and includes a pair of the gating structures spaced by an intervening region having a missing gating structure. The circuit arrangement has a first dimension along the first direction. A second region is proximate to the CMOS region. Conductive structures are associated with the second region. Some of the conductive structures are electrically coupled with the circuit arrangement. A second dimension is a distance across said some of the conductive structures along the first direction. The conductive structures and the circuit arrangement are aligned such that the second dimension is substantially the same as the first dimension. Some embodiments include methods of forming integrated assemblies.

Abstract: This application provides a communication method. The communication method includes: A first device sends indication information, where the indication information is used to indicate whether the first device sends a first synchronization signal block in a synchronization slot of a sidelink, and the synchronization slot is used to transmit a synchronization signal block; and the first device sends first data in the synchronization slot of the sidelink. Because the first device indicates a sending behavior of the first device in the synchronization slot before sending the first data, a receiver may determine a processing manner of the receiver in the synchronization slot based on the indication information.

Abstract: Some embodiments include an integrated assembly having capacitor-contact-regions. Metal-containing interconnects are coupled with the capacitor-contact-regions. A first insulative material is between the metal-containing interconnects. A second insulative material is over the first insulative material. A third insulative material is over the second insulative material. First capacitor electrodes extend through the second and third insulative materials and are coupled with the metal-containing interconnects. Fourth insulative material is adjacent the first capacitor electrodes. Capacitor plate electrodes are adjacent the fourth insulative material and are spaced from the first capacitor electrodes by the fourth insulative material. Some embodiments include methods of forming integrated assemblies.

Abstract: Structures and fabrication methods for a field-effect transistor. First and second spacers are formed adjacent to opposite sidewalls of a gate structure. A section of the gate structure is partially removed with a first etching process to form a cut that extends partially through the gate structure. After partially removing the section of the gate structure with the first etching process, upper sections of the first and second sidewall spacers arranged above the gate structure inside the cut are at least partially removed. After at least partially removing the upper sections of the first and second sidewall spacers, the section of the gate structure is completely removed from the cut with a second etching process. A dielectric material is deposited inside the cut to form a dielectric pillar.

Abstract: Disclosed is a humidifier and home appliance having a structure with an air inflow path formed in a water tank separately from a water supply inlet and configured to prevent noise due to air bubbles during water supply to a water reservoir from the water tank, and a structure configured to block the air inflow path in order to prevent water from flowing into the air inflow path during replenishment of water to the water tank.

Abstract: In an air-conditioning system, a gaseous refrigerant remaining in a reservoir can be discharged from the reservoir even when a cooling operation has started and the reservoir is being filled with a liquid refrigerant. Therefore, the reservoir can be filled with the liquid refrigerant at a faster speed.

Abstract: Disclosed are provided indoor unit of an air conditioner. A present invention is to provide an indoor unit of an air conditioner having an improved structure for preventing vibrations and noise of a blade due to vibrations of a motor when the blade rotates, and a blade unit applied to the indoor unit. The indoor unit of the air conditioner includes a main body including an outlet, and a blade unit configured to adjust a direction in which air discharged from the outlet is discharged, wherein the blade unit comprises, a blade coupled with the main body to be rotatable in the outlet, a motor including a rotation transfer member, and configured to generate a rotatory force that is transferred to the blade; and a buffer member made of a material having a restoring force, coupled with the blade at one end, and surrounding a part of the rotation transfer member.

Abstract: Disclosed is a humidifier and home appliance having a structure with an air inflow path formed in a water tank separately from a water supply inlet and configured to prevent noise due to air bubbles during water supply to a water reservoir from the water tank, and a structure configured to block the air inflow path in order to prevent water from flowing into the air inflow path during replenishment of water to the water tank.

Abstract: One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein the substantially horizontally oriented bottom central surface is positioned a first level above the substrate and the substantially horizontally oriented recessed surface is positioned at a second level above the substrate, wherein the second level is greater than the first level.

Abstract: One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor substrate, the sacrificial gate structure comprising a sacrificial gate insulation layer and a sacrificial gate electrode material, performing a first gate-cut etching process to thereby form an opening in the sacrificial gate electrode material and forming an internal sidewall spacer in the opening. In this example, the method also includes, after forming the internal sidewall spacer, performing a second gate-cut etching process through the opening, the second gate-cut etching process being adapted to remove the sacrificial gate electrode material, performing an oxidizing anneal process and forming an insulating material in at least the opening.

Abstract: Disclosed is a humidifier and home appliance having a structure with an air inflow path formed in a water tank separately from a water supply inlet and configured to prevent noise due to air bubbles during water supply to a water reservoir from the water tank, and a structure configured to block the air inflow path in order to prevent water from flowing into the air inflow path during replenishment of water to the water tank.

Abstract: A pipe fixing device comprising a plurality of pipes, for conducting liquid or gas, arranged to cross each other, and a fixing member for fixing the plurality of pipes. The fixing member comprises a plurality of pipe fixing bores, and a plurality of fitting bores for the fitting of bands used to tighten the pipes. The present invention can secure not only easy insertion of the pipes arranged to cross each other, but also enhancement in a coupling force of the pipes through the use of the tightening bands, resulting in stable and reliable fixation of the pipes.

Abstract: A pipe fixing device comprising a plurality of pipes, for conducting liquid or gas, arranged to cross each other, and a fixing member for fixing the plurality of pipes. The fixing member comprises a plurality of pipe fixing bores, and a plurality of fitting bores for the fitting of bands used to tighten the pipes. The present invention can secure not only easy insertion of the pipes arranged to cross each other, but also enhancement in a coupling force of the pipes through the use of the tightening bands, resulting in stable and reliable fixation of the pipes.