Abstract: A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.

Abstract: A sealing member according to an exemplary embodiment of the present invention includes a first plate having a predetermined width with a plate shape, and a second plate with a plate shape connected to both ends of the first plate, wherein the first plate and the second plate have the same plate shape and form a closed line.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A damper for decreasing a piping vibration capable of enhancing the efficiency in decreasing the piping vibration and adjusting the weight of a weight portion according to the type of the compressor and the shape of the pipe applied to the compressor by separating a fixed portion from a weight portion such that the fixed portion makes a direct contact with a pipe and the weight portion has an interval from the pipe without making a direct contact with the pipe, in which the damper installed on the pipe to decrease the vibration includes a fixation part provided with a coupling hole formed therein to be coupled to the pipe, and coupled and fixed to the pipe such that the coupling hole makes contact with an outer circumferential surface of the pipe, and a weight part connected to the fixation part.

Abstract: One embodiment relates to an oblique illuminator. The oblique illuminator includes a light source emitting a light beam, a first reflective surface, and a second reflective surface. The first reflective surface has a convex cylindrical shape with a projected parabolic profile along the non-powered direction which is configured to reflect the light beam from the light source and which defines a focal line. The second reflective surface has a concave cylindrical shape with a projected elliptical profile which is configured to reflect the light beam from the first reflective surface and which defines first and second focal lines. The focal line of the first reflective surface is coincident with the first focal line of the second reflective surface. The first and second focal lines of the second reflective surface may be a same line in which case the elliptical curvature is a projected spherical profile. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to an oblique illuminator. The oblique illuminator includes a light source emitting a light beam, a first reflective surface, and a second reflective surface. The first reflective surface has a convex cylindrical shape with a projected parabolic profile along the non-powered direction which is configured to reflect the light beam from the light source and which defines a focal line. The second reflective surface has a concave cylindrical shape with a projected elliptical profile which is configured to reflect the light beam from the first reflective surface and which defines first and second focal lines. The focal line of the first reflective surface is coincident with the first focal line of the second reflective surface. The first and second focal lines of the second reflective surface may be a same line in which case the elliptical curvature is a projected spherical profile. Other embodiments, aspects and features are also disclosed.

Abstract: A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.

Abstract: An air conditioner that improves efficiency of an inverter compressor by injecting an intermediate pressure refrigerant to the inverter compressor during heating or cooling and a control method thereof are provided.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

Abstract: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

Abstract: An apparatus and method for manufacturing a highly efficient flexible thin metal film-laminated strip by improves adhesiveness between a polyimide strip and a thin metal film, and removes stress from thin films laminated through magnetron sputtering, which is a dry deposition process. The stress-free flexible circuit board manufacturing method includes the steps of: a) depositing a seed layer on the substrate using the magnetron deposition source; b) depositing a compressive thin film using the single magnetron deposition source arranged next to the magnetron deposition source; c) depositing tensile thin film using the dual magnetron deposition source arranged next to the single magnetron deposition source; and d) repeating the steps b) and c) so as to sequentially and alternately deposit compressive thin films and tensile thin films thereby obtaining a thick film with a desired thickness.

Abstract: Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

Abstract: Disclosed is an axial flow fan capable of preventing cracks from generating at parts where stress is concentrated, by improving the structure. For this, the axial flow fan includes a hub, a plurality of wings extended from an outer surface of the hub, and a reinforcing member filling a space formed between the outer surface of the hub and a front edge part of each wing.

Abstract: One embodiment relates to an oblique illuminator. The oblique illuminator includes a light source emitting a light beam, a first reflective surface, and a second reflective surface. The first reflective surface has a convex cylindrical shape with a projected parabolic profile along the non-powered direction which is configured to reflect the light beam from the light source and which defines a focal line. The second reflective surface has a concave cylindrical shape with a projected elliptical profile which is configured to reflect the light beam from the first reflective surface and which defines first and second focal lines. The focal line of the first reflective surface is coincident with the first focal line of the second reflective surface. The first and second focal lines of the second reflective surface may be a same line in which case the elliptical curvature is a projected spherical profile. Other embodiments, aspects and features are also disclosed.

Abstract: A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.

Abstract: A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced.

Abstract: A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

Abstract: Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.