Abstract: In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution. A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate. The silicon oxide material fills the trench isolation regions.

Abstract: The present invention provides a method for effectively extracting useful ingredients from an umbilical cord. The present invention provides an umbilical cord extract including the useful ingredients. The umbilical cord extract, according to the present invention, can be used as a serum substitute for cultivating ordinary cells and stem cells from an animal. Also, the umbilical cord extract, according to the present invention, can be used for a filler and a dressing for tissue restoration, and for a cosmetic composition for improving the skin. In addition, the present invention relates to a composition for a medium for separating and stem cells derived from tissue, such as an umbilical cord and fatty tissue, and to a method for separating and cultivating stem cells derived from the tissue using the same.

Abstract: The present invention relates to a medical composite biomaterial. More specifically, the present invention relates to a medical composite biomaterial including collagen and a hyaluronic acid derivative. Also, the present invention relates to a cartilage cell treating agent using the biomaterial and stem cells derived from a mammal umbilical cord. The biomaterial does not cause an immune reaction, has superior durability, and the cartilage cell treating agent comprising the biomaterial and the stem cells enables arthroscopic surgery, thereby reducing pain of the patient and effectively treat of degenerative arthritis and cartilage damage.

Abstract: A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.

Abstract: A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.

Abstract: An electron emission device includes first and second substrates opposing one another with a gap therebetween. Cathode electrodes are formed on the first substrate. An insulation layer is formed covering the cathode electrodes and having apertures. Gate electrodes are formed on the insulation layer and have apertures at locations corresponding to the locations of the apertures of the insulation layer so as to expose the cathode electrodes. Electron emission regions are formed in the apertures on the cathode electrodes. An anode electrode is formed on the second substrate. An outer surface of the electron emission regions is formed with a shape similar to a shape of equipotential lines formed when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the electrodes.

Abstract: A slurry for polishing a ruthenium layer comprises distilled water, sodium periodate (NaIO4), an abrasive and a pH controlling agent.

Abstract: A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.

Abstract: Provided is a method for generating metadata for symbolic music and a music restoring apparatus employing the same, and more particularly, a method for generating metadata for ornaments existing in the Korean traditional music and an apparatus for restoring multimedia including the same. A method for generating metadata for music, which is suggested in the present invention, includes the steps of: a) generating an extensible Markup Language (XML) notation for ornaments; b) generating a complete form of metadata including the XML notation; and c) generating metadata for entire music by using the complete form of metadata and the XML notation.

Abstract: The chemical mechanical polishing of a semiconductor device includes polishing a target layer to be polished through a chemical reaction by slurry and a mechanical process by a polishing pad. Then performing a post cleaning composed of cleaning, rinsing and drying of the surface of the polished target layer. The parts for cleaning, rinsing and drying procedures are arranged in a row and the post cleaning is performed in a scan manner using a bar type module. Provided at the cleaning and rinsing parts, a solution supplying nozzle and a retrieving nozzle disposed at both sides of the solution supplying nozzle. Finally, removing the solution supplied to the target layer to be polished immediately after the solution comes in contact with the target layer.

Abstract: A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.

Abstract: A polishing pad for chemically mechanically polishing a semiconductor wafer comprises a first groove pattern circularly formed on the surface of the polishing pad, and a second groove pattern formed on the surface of the polishing pad while spirally extending from the circular center of the polishing pad to the outside so as to overlap the first groove pattern. The polishing pad further comprises a third groove pattern formed on the surface of the polishing pad while radially extending from the circular center of the polishing pad to the outside so as to overlap the first and second groove patterns. A chemical mechanical polishing apparatus comprises the polishing pad. The polishing pad of the chemical mechanical polishing apparatus has enhanced groove patterns formed on the polishing pad to provide uniform distribution of the slurry, thereby enhancing polishing speed and polishing uniformity.

Abstract: A cylinder type storage node is made by, inter alia: forming a sacrificial oxide layer containing organic material over a semiconductor substrate; defining holes for storage nodes by etching the sacrificial oxide layer; forming storage nodes on surfaces of the holes; and removing the sacrificial oxide layer through wet etching and removing the organic material contained in the sacrificial oxide layer using ozone gas.

Abstract: An apparatus for converting voice packets transmitted/received through a network includes a first transcoder for performing at least one of bit-unpacking and unquantization on an encoded packet at a first encoder, namely transmitting party, to obtain an LSP (Line Spectrum Pair) parameter of the first encoder, and converting and unquantizing the LSP parameter to an LSP parameter of a second encoder, namely receiving party, to do bit-packing. A second transcoder performs at least one of bit-unpacking and unquantization on an encoded packet at the second encoder, namely transmitting party, to obtain an LSP parameter of the second encoder, and converts and unquantizes the LSP parameter to an LSP parameter of the first encoder, namely receiving party, to do bit-packing.

Abstract: A field emission display includes a first substrate, at least one gate electrode formed on the first substrate, cathode electrodes formed on the first substrate, an insulation layer formed between the at least one gate electrode and the cathode electrodes, emitters electrically contacting the cathode electrodes, and formed in pixel regions of the first substrate, counter electrodes electrically connected to the at least one gate electrode and provided such that the counter electrodes and emitters have a first predetermined gap therebetween, a second substrate provided opposing the first substrate with a second predetermined gap therebetween, wherein emitter-receiving sections are provided in the cathode electrodes, dividers are formed between the emitter-receiving sections, the emitters are electrically contacted with an edge of the cathode electrodes corresponding to a shape of the emitter-receiving sections, and at least a part of each of the counter electrodes is provided within the corresponding emitter-r

Abstract: A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to 3.2 cps.

Abstract: A method for reducing a thickness variation of a nitride layer in a shallow trench isolation (STI) CMP process is provided, the method including forming an active region pattern in an alignment key region of a scribe lane where a device isolation film is formed at an ISO level, and forming a dummy active region pattern substantially adjacent to a vernier key pattern in the scribe lane during formation of the vernier key pattern, wherein the dummy active region pattern is spaced apart from the vernier key pattern by a known distance. Preferably, the active region pattern and the dummy active region pattern are formed prior to the STI CMP process.

Abstract: An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(?m)?D?28.1553+1.7060t(?m), where t indicates a thickness of the insulating layer.

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.

Abstract: An electron emission device effectively blocks an electric field generated by an anode, consistently and stably emits electrons at a low gate voltage, and provides a high luminous uniformity and luminous efficiency. In addition, a flat display apparatus using the electron emission device as a backlight unit (BLU) and a method of driving the light emission device are provided.