Abstract: A method for displaying a three-dimensional (3D) image includes: alternately displaying a left eye image and a right eye image; calculating a luminance value of a displayed image to detect a peak value of a luminance value; comparing the detected peak value and a stored peak value, and when the detected peak value corresponds to a right eye peak value, determining that a current image is a right eye image, and when the detected peak value corresponds to a left eye peak value, determining that the current image is a left eye image; outputting a synchronization signal according to the determination result; and making the left eye image and the right eye image reach a user's left eye or right eye according to the synchronization signal.

Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.

Abstract: The present disclosure relates to host cells containing a recombinant xylose reductase, a recombinant cellodextrin transporter, a recombinant intracellular ?-glucosidase, and lacking xylitol dehydrogenase and xylulokinase, and to methods of using such cells for producing xylitol from cellulosic biomass containing cellodextrin and xylose.

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present disclosure includes: an insulating substrate; a gate electrode disposed on the insulating substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor; an ohmic contact layer disposed at an interface between at least one of the source and drain electrodes and the semiconductor. Surface heights of the source and drain electrodes different, while surface heights of the semiconductor and the ohmic contact layer are the same. The ohmic contact layer is made of a silicide of a metal used for the source and drain electrodes.

Abstract: A method and apparatus for combining characteristics of images and applying the combined characteristic to a display or a camera in an electronic device. The method includes displaying a plurality of images in which an image processing parameter value is applied to a reference image step by step, selecting any one of the plurality of images, and applying an image processing parameter value for the selected image to a display or a camera.

Abstract: Disclosed herein are a surface modifier for metal oxide particles and a method of modifying the surface of metal oxide particles using the same. The surface modifier consists either of an alkylsilanepolyol containing a cyclic alkyl group capable of imparting steric hindrance or of a mixture of said alkylsilanepolyol with alkylalkoxysilane, and the method of modifying the surface of metal oxide particles comprises coating the surface modifier on the hydrophilic surface of the metal oxide particles through chemical bonding so as to impart hydrophobicity or amphiphilicity (hydrophilicity and hydrophobicity) and reactivity to the surface of the metal oxide particles.

Abstract: A method for fabricating a process substrate includes: providing a first substrate; providing a substrate and an auxiliary substrate; contacting the substrate and the auxiliary substrate with each other in a vacuum state, thereby forming micro spaces of a vacuum state between the substrate and the auxiliary substrate; and increasing a pressure at the outside of the contacted substrate and auxiliary substrate to attach the substrate and the auxiliary substrate to each other by a pressure difference between the micro spaces and the outside of the contacted substrate and auxiliary substrate.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Abstract: A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region.

Abstract: The present disclosure relates to host cells containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports cellodextrin into the cell. The present disclosure further relates to methods of increasing transport of cellodextrin into a cell, methods of increasing growth of a cell on a medium containing cellodextrin, methods of co-fermenting cellulose-derived and hemicellulose-derived sugars, and methods of making hydrocarbons or hydrocarbon derivatives by providing a host cell containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports cellodextrin into the cell.

Abstract: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: The present disclosure provides compositions and methods related to the fermentation of xylose. Host cells having recombinant polynucleotides encoding one or more of aldose reductases, xylitol dehydrogenases, and xylulokinase are provided herein. Host cells having reduced expression of PHO13 are also provided herein. Also provided herein are uses of host cells provided herein, and methods relating to the use of xylose-containing materials.

Abstract: The present disclosure provides compositions and methods for the fermentation of cellodextrins and ?-D-glucose. Host cells and recombinant polypeptides having glucose mutarotase activity are provided. Additionally, methods for improving cell growth, production of chemicals, and consumption of cellodextrins and ?-D-glucose during fermentation of mixtures containing cellodextrins and ?-D-glucose are provided.

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

Abstract: Disclosed herein are an apparatus and method for cultivating microalgae using effluent from sludge treatment. The apparatus includes an advanced sewage treatment apparatus, a sludge treatment apparatus and a microalgae cultivation apparatus, the sludge treatment apparatus including: a first aerobic reactor which is operated under aerobic conditions and serves to ferment sludge; a second aerobic reactor which is operated in a state in which air is injected in an amount larger than that in the first aerobic reactor, and serves to increase the fermentation activity of microorganisms in the sludge and degrade the sludge; a membrane bio-reactor (MBR) which serves to receive effluent from the second aerobic reactor and biologically remove high-concentration organic matter from the effluent by the action of aerobic microorganisms while removing total suspended solids using a membrane, wherein the effluent discharged from the MBR reactor is supplied to the microalgae cultivation apparatus.

Abstract: Disclosed herein are an apparatus and method for reducing nitrate using iron-oxidizing microorganisms, which can easily reduce nitrate using iron-oxidizing microorganisms. The apparatus includes: a nitrate-reducing reactor which is operated under anaerobic conditions and provides a space for reduction of nitrate; and an iron-oxidizing microorganism provided in the nitrate-reducing reactor, wherein the iron-oxidizing microorganism releases divalent iron (Fe2+), the released Fe2+ is converted to Fe3+ by microbial oxidation under anaerobic conditions while releasing an electron, and the released electron is used in the reduction of nitrate into nitrogen gas by the iron-oxidizing microorganism.