Abstract: According to an aspect of the present disclosure, there is provided a substrate treating apparatus comprising: a vessel part having a substrate treatment region formed therein and including a supply port through which a treating fluid is supplied to the substrate treatment region and an exhaust port through which the treating fluid is exhausted from the substrate treatment region; a fluid supply unit configured to supply the treating fluid to the substrate treatment region; an exhaust unit configured to exhaust the treating fluid from the vessel part. The exhaust unit comprises: a main line connected to the exhaust port; an extension line branched from at least one of first and second nodes of the main line and including at least one of a first orifice or a first check valve to control an exhaust speed; and an auxiliary line branched from a third node of the main line, where an orifice and a check valve are not formed.

Abstract: A substrate treating apparatus of the present disclosure comprises: a chamber member having an accommodation space configured to accommodate a vessel part where a substrate treatment region constituting a supercritical treatment space are formed, and an opening configured to move the substrate inside or outside; a shutter configured to open or close the chamber member; and a first exhaust part configured to discharge an internal air from the accommodation space to the outside, wherein the temperature of the substrate treatment region is increased.

Abstract: A method for verifying a drone included in an industrial Internet of Things (IIoT) system, using a petri-net modeling is disclosed. In an embodiment, the method includes a step of modeling the IIoT system as a hierarchical petri-net (modeling step); and a step of verifying whether the drone has security vulnerability on the basis of the hierarchical petri-net model (verification step), wherein the verification step can determine that a drone has security vulnerability when at least one of a plurality of determination factors provided as places to the hierarchical petri-net model determines that the drone is operating abnormally.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: Provided are an ozone water decomposition apparatus and method that can decompose ozone water quickly and stably.

Abstract: Disclosed is a method of decomposing ozone in ozone water. According to the present invention, a temperature of ozone water is increased by mixing ozone water with heated water, and the ozone in the ozone water is decomposed into oxygen by the increase in the temperature.

Abstract: The present invention provides a method for treating a substrate. The method for treating a substrate comprises: treating the substrate with liquid; and drying the liquid-treated substrate, and the liquid treatment step includes: a first liquid supply step of supplying a first liquid to an upper surface of the rotating substrate; and a second liquid supply step of supplying a second liquid to an upper surface of the rotating substrate, and in the second liquid supply step, a rotation speed of the substrate is adjusted such that the second liquid supplied on the substrate flows from a central region of the substrate to an edge region of the substrate.

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus for treating the substrate includes a liquid treating chamber for liquid-treating the substrate by supplying a treatment liquid to the substrate, a drying chamber for drying the substrate by supplying a process fluid to the substrate, a transfer unit for transferring the substrate between the liquid treating chamber and the drying chamber, and a rear surface cleaning unit for cleaning a rear surface of the substrate, in which the rear surface cleaning unit may clean the rear surface of the substrate while transferring the substrate from the liquid treating chamber to the drying chamber.

Abstract: A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10?9 seconds or less for etching an edge of the substrate.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first process treating unit configured to treat a substrate in a single-type method; a second process treating unit configured to treat a substrate in a batch-type method; and a posture changing unit provided between the first process treating unit and the second process treating unit and configured to change a posture of the substrate between a vertical posture and a horizontal posture, and wherein the substrate is loaded to and unloaded from the first process treating unit.

Abstract: The present invention provides an apparatus for treating a substrate, the apparatus including: a processing tank having an accommodation space in which a processing liquid is accommodated; a support member for supporting at least one substrate in the receiving space in a vertical posture; and a posture changing robot for changing a posture of the substrate in a state of being immersed in the liquid state from the vertical posture to a horizontal posture, in which wherein the posture changing robot includes: a hand configured to grip the substrate; and an arm for moving the hand.

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: A wet etching system operating method includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etching apparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Abstract: A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.