Abstract: A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer provided with the thin film transistor.

Abstract: A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a first double-layered metal structure and a second double-layered metal structure. The first double-layered metal structure includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer and a first copper layer. The second double-layered metal structure includes a data line, source and drain electrodes, a capacitor electrode, and a data pad electrode, wherein all of the data line, the source and drain electrodes, the capacitor electrode and the data pad electrode have a second barrier metal layer and a second copper layer.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.

Abstract: According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.

Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Abstract: According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

Abstract: A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.

Abstract: An array substrate includes a substrate, a gate line disposed along a first direction on the substrate, and a common line is parallel to the gate line, the common line being of the same material as the gate line. A gate insulating layer is on the gate and common lines, a semiconductor layer is on the gate insulating layer and a transparent pixel electrode includes a drain electrode portion. The drain electrode portion overlaps the semiconductor. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively. A data line is disposed along a second direction on the passivation layer, and the data line connected to the source electrode through the first contact hole and crossing the gate line.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer provided with the thin film transistor.

Abstract: A pattern forming method includes: forming an etching-subject layer on a substrate; forming a Ti layer on the etching-subject layer; forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask; etching the Ti layer to form a TiOx pattern; etching the etching-subject layer using the TiOx pattern as a mask; and removing the TiOx pattern.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer provided with the thin film transistor.

Abstract: A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Abstract: A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Abstract: A fabricating method of a color filter array substrate includes the steps of forming a black matrix on a substrate, forming red, green, blue color filters on the substrate on which the black matrix is formed, forming an overcoat layer including a white color filter on the substrate on which the red, green, and blue color filters are formed, aligning a flat panel soft mold to the overcoat layer; and smoothing the overcoat layer using the flat panel soft mold.

Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.