Abstract: A copper alloy for an electrical line of a liquid crystal display device that includes pure copper and an amount of indium.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.

Abstract: An array substrate and a method of manufacturing thereof are disclosed for a liquid crystal display device. The array substrate includes a substrate, a gate line disposed along a first direction on the substrate, a common line parallel to the gate line and spaced apart from the gate line, wherein the common line is made of the same material as the gate line. The array substrate also includes a gate insulating layer on the gate and common lines, a semiconductor layer on the gate insulating layer and a pixel electrode of transparent conductive material including a drain electrode portion. The drain electrode portion overlaps the semiconductor layer and a source electrode of transparent conductive material is spaced apart from the drain electrode portion. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively.

Abstract: A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.

Abstract: A liquid crystal display device includes a first substrate having a plurality of thin film transistors and a plurality of metal lines, a first insulation material layer formed on the metal lines, a second insulation material layer formed on the first insulation material layer on the metal lines, a first hole formed in the second insulation material layer over at least two of the metal lines, a second contact hole formed in the first and second insulation layers exposing a drain electrode of the thin film transistors, a pixel electrode connected to the drain electrode through the second contact hole, a sealing material formed within the first hole, a second substrate bonded to the first substrate via the sealing material, and a liquid crystal material disposed between the first and second substrates.

Abstract: A liquid crystal display device includes a first substrate having a plurality of thin film transistors and a plurality of metal lines, a first insulation material layer formed on the metal lines, a second insulation material layer formed on the first insulation material layer on the metal lines, a first hole formed in the second insulation material layer over at least two of the metal lines, a second contact hole formed in the first and second insulation layers exposing a drain electrode of the thin film transistors, a pixel electrode connected to the drain electrode through the second contact hole, a sealing material formed within the first hole, a second substrate bonded to the first substrate via the sealing material, and a liquid crystal material disposed between the first and second substrates.

Abstract: An array substrate and a method of manufacturing thereof are disclosed for a liquid crystal display device. The array substrate includes a substrate, a gate line disposed along a first direction on the substrate, a common line parallel to the gate line and spaced apart from the gate line, wherein the common line is made of the same material as the gate line. The array substrate also includes a gate insulating layer on the gate and common lines, a semiconductor layer on the gate insulating layer and a pixel electrode of transparent conductive material including a drain electrode portion. The drain electrode portion overlaps the semiconductor layer and a source electrode of transparent conductive material is spaced apart from the drain electrode portion. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively.

Abstract: A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Abstract: An array substrate for a liquid crystal display device includes a substrate, a thin film transistor having a signal line of dual layered structure of a copper compound and copper, and a pixel electrode connected to the thin film transistor.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.

Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Abstract: A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer provided with the thin film transistor.

Abstract: A pattern forming method includes: forming an etching-subject layer on a substrate; forming a Ti layer on the etching-subject layer; forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask; etching the Ti layer to form a TiOx pattern; etching the etching-subject layer using the TiOx pattern as a mask; and removing the TiOx pattern.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a first double-layered metal structure and a second double-layered metal structure. The first double-layered metal structure includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer and a first copper layer. The second double-layered metal structure includes a data line, source and drain electrodes, a capacitor electrode, and a data pad electrode, wherein all of the data line, the source and drain electrodes, the capacitor electrode and the data pad electrode have a second barrier metal layer and a second copper layer.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A liquid crystal display device includes a first substrate having a plurality of thin film transistors and a plurality of metal lines, a first insulation material layer formed on the metal lines, a second insulation material layer formed on the first insulation material layer on the metal lines, a first hole formed in the second insulation material layer over at least two of the metal lines, a second contact hole formed in the first and second insulation layers exposing a drain electrode of the thin film transistors, a pixel electrode connected to the drain electrode through the second contact hole, a sealing material formed within the first hole, a second substrate bonded to the first substrate via the sealing material, and a liquid crystal material disposed between the first and second substrates.

Abstract: An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.

Abstract: A copper alloy for an electrical line of a liquid crystal display device that includes pure copper and an amount of indium.

Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).