Patents by Inventor Yong Tae Moon

Yong Tae Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9768346
    Abstract: A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlxGa(1?x)N/AlyGa(1?y)N, such as AlxGa(1?x)N/AlyGa(1?y)N, on the active layer.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: September 19, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
  • Patent number: 9559257
    Abstract: A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlxInyGa(1-x-y)N-based layer. The undoped last barrier layer may be provided between the AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first Inp1Ga1-p1N (0<p1<1) layer, an Alq1Inq2Ga1-q1-q2N (0<q1, q2<1) layer on the first Inp1Ga1-p1N layer, and a second Inp2Ga1-p2N (0<p2<1) layer on the Alq1Inq2Ga1-q1-q2N layer.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: January 31, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Tae Moon, Hyun Chul Lim
  • Patent number: 9431575
    Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: August 30, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
  • Patent number: 9337383
    Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: May 10, 2016
    Assignees: LG Innotek Co., Ltd., Industry-University Cooperation Foundation Hanyang University Erica Campus
    Inventors: Dae Seob Han, Yong Tae Moon, Jong-In Shim
  • Patent number: 9312433
    Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: April 12, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
  • Patent number: 9178108
    Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: November 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Sik Lee, Joong Seo Park, Ho Ki Kwon, Seoung Hwan Park
  • Patent number: 9166100
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: October 20, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, Ha Jong Bong
  • Publication number: 20150287876
    Abstract: One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive AlxGa(1-x)N/AlyGa(1-y)N (here, AlxGa(1-x)N/AlyGa(1-y)N) on the active layer (114).
    Type: Application
    Filed: October 22, 2013
    Publication date: October 8, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
  • Publication number: 20150270436
    Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.
    Type: Application
    Filed: October 8, 2013
    Publication date: September 24, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
  • Publication number: 20150255669
    Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.
    Type: Application
    Filed: September 24, 2013
    Publication date: September 10, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
  • Patent number: 9099611
    Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: August 4, 2015
    Assignees: LG INNOTEK CO., LTD., TAMURA CORPORATION, KOHA CO., LTD.
    Inventor: Yong Tae Moon
  • Patent number: 9087961
    Abstract: A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1?x?y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1?x?y)N-based layer (128).
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: July 21, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Tae Moon, Hyun Chul Lim
  • Patent number: 8987757
    Abstract: Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: March 24, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Dae Seob Han, Jeong Sik Lee
  • Publication number: 20150021545
    Abstract: The light emitting device includes a first conductive type semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum wall (114b) on the first conductive type semiconductor layer (112), an undoped last barrier layer (127) on the active layer (114). An AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127) and a second conductive type semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
    Type: Application
    Filed: July 17, 2014
    Publication date: January 22, 2015
    Inventors: Yong Tae Moon, Hyun Chul Lim
  • Publication number: 20140361246
    Abstract: A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
    Type: Application
    Filed: June 10, 2014
    Publication date: December 11, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Yong Tae MOON, Hyun Chul Lim
  • Patent number: 8779425
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: July 15, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
  • Patent number: 8686400
    Abstract: Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: April 1, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8680569
    Abstract: A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: March 25, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8669545
    Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: March 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Seon Song, Yong Tae Moon
  • Patent number: 8618566
    Abstract: Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including ?-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: December 31, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Soon Yim, Jeong Sik Lee