Patents by Inventor Yong Tae Moon
Yong Tae Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136339Abstract: Disclosed herein are light sources (e.g., micro-LEDs and ?OLEDs), display electronics, and tiled display panels for high luminance, high resolution display panels used in near-eye display systems. Techniques for three-dimensional integration of multi-color LEDs, micro-LED surface loss reduction using band engineered sidewall passivation structures, micro-LED heat spreading materials and structures, and micro-LED light extraction efficiency improvement using etched outwardly tilted sidewall minors are described. Techniques for drive circuit supply voltage tracking and compensation, dynamic burn-in compensation using interpolation of compensation parameters, and digital misalignment calibration of tiled display panels are also described.Type: ApplicationFiled: December 11, 2023Publication date: April 25, 2024Inventors: Shenghui LEI, Yong Tae MOON, Ali SENGÜL
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Publication number: 20240055569Abstract: Disclosed herein are techniques for micro-light emitting diodes (micro-LEDs). According to certain embodiments, a micro-LED device includes a micro-LED comprising a semiconductor mesa structure configured to emit light, a spacer layer on the micro-LED, and a micro-lens on the spacer layer and configured to extract and collimate the light emitted by the micro-LED, where a thickness of the spacer layer is selected such that a focal point of the micro-lens is at a front surface of the semiconductor mesa structure.Type: ApplicationFiled: August 15, 2022Publication date: February 15, 2024Inventors: Salim BOUTAMI, Guillaume LHEUREUX, Sophia Antonia FOX, Yong Tae MOON
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Publication number: 20230420483Abstract: Described are LED devices and corresponding manufacturing techniques. In some embodiments, an LED device includes a first doped semiconductor layer, a second doped semiconductor layer having an opposite doping, and a two-dimensional (2D) array of light emitting cells. Each light emitting cell corresponds to a mesa of an individual pixel and includes at least one quantum well. The 2D array is located between the first doped semiconductor layer and the second doped semiconductor layer. The LED device further includes a flattening layer between the first doped semiconductor layer and the 2D array. The flattening layer comprises an undoped quantum barrier (QB) layer that completely covers sidewalls of each light emitting cell in the 2D array. The undoped QB layer quantum mechanically isolates the light emitting cells from each other. The flattening or undoped QB layer may also protect the light emitting cells against etch-induced defects during a mesa pixelation process.Type: ApplicationFiled: September 5, 2023Publication date: December 28, 2023Inventors: Yong Tae MOON, Alexander TONKIKH, Liang ZHANG, Shenghui LEI, Ezzah Azimah BINTI ALIAS, David MASSOUBRE, Christophe Antoine HURNI
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Publication number: 20230335518Abstract: A micro-light emitting diode device includes a backplane that includes drive circuits and a first bonding layer, and an array of micro-LEDs that includes an array of semiconductor mesa structures and a second bonding layer. The first bonding layer includes a first dielectric layer, and first metal interconnects that are at least partially in the first dielectric layer and electrically connected to the drive circuits. The second bonding layer includes a second dielectric layer, and second metal interconnects that are at least partially in the second dielectric layer and electrically connected to the array of semiconductor mesa structures. The first bonding layer is bonded to the second bonding layer. At least one of the first dielectric layer or the second dielectric layer includes a first dielectric material characterized by a thermal conductivity greater than 50 W/(m·K) at room temperature, such as AlN.Type: ApplicationFiled: April 13, 2022Publication date: October 19, 2023Inventors: Shenghui LEI, Yong Tae MOON, Stephan LUTGEN
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Publication number: 20230268459Abstract: LED devices and corresponding techniques for manufacturing LED devices are described. In some embodiments, an LED device includes a plurality of mesas, each mesa corresponding to a separate LED and including a layered semiconductor structure. The layered semiconductor structure includes an active region and a quantum barrier (QB) layer. The active region has a matrix of quantum well (QW) cells that are quantum mechanically isolated by the QB layer. In particular, the QB layer can include ridge-shaped structures that laterally separate adjacent QW cells. The matrix of QW cells can be arranged as a two-dimensional array. In some embodiments, the QW cells are epitaxially grown such that each QW cell is thicker along a central region and thinner along a peripheral region, with the peripheral region corresponding to where the QW cell meets a ridge-shaped structure of the QB layer.Type: ApplicationFiled: May 11, 2022Publication date: August 24, 2023Inventors: Yong Tae MOON, Alexander TONKIKH, Christophe Antoine HURNI
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Patent number: 11450788Abstract: In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.Type: GrantFiled: March 22, 2019Date of Patent: September 20, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Yong Tae Moon, Ji Hyung Moon, Sang Youl Lee
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Patent number: 11158668Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: GrantFiled: September 19, 2018Date of Patent: October 26, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Yong Tae Moon, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
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Publication number: 20210020807Abstract: In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.Type: ApplicationFiled: March 22, 2019Publication date: January 21, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Yong Tae MOON, Ji Hyung MOON, Sang Youl LEE
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Publication number: 20200286949Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: ApplicationFiled: September 19, 2018Publication date: September 10, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Yong Tae MOON, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
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Patent number: 9768346Abstract: A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlxGa(1?x)N/AlyGa(1?y)N, such as AlxGa(1?x)N/AlyGa(1?y)N, on the active layer.Type: GrantFiled: October 22, 2013Date of Patent: September 19, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Patent number: 9559257Abstract: A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlxInyGa(1-x-y)N-based layer. The undoped last barrier layer may be provided between the AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first Inp1Ga1-p1N (0<p1<1) layer, an Alq1Inq2Ga1-q1-q2N (0<q1, q2<1) layer on the first Inp1Ga1-p1N layer, and a second Inp2Ga1-p2N (0<p2<1) layer on the Alq1Inq2Ga1-q1-q2N layer.Type: GrantFiled: July 17, 2014Date of Patent: January 31, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Yong Tae Moon, Hyun Chul Lim
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Patent number: 9431575Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: GrantFiled: October 8, 2013Date of Patent: August 30, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Patent number: 9337383Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.Type: GrantFiled: February 24, 2012Date of Patent: May 10, 2016Assignees: LG Innotek Co., Ltd., Industry-University Cooperation Foundation Hanyang University Erica CampusInventors: Dae Seob Han, Yong Tae Moon, Jong-In Shim
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Patent number: 9312433Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: GrantFiled: September 24, 2013Date of Patent: April 12, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Patent number: 9178108Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.Type: GrantFiled: December 27, 2010Date of Patent: November 3, 2015Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Jeong Sik Lee, Joong Seo Park, Ho Ki Kwon, Seoung Hwan Park
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Patent number: 9166100Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.Type: GrantFiled: January 6, 2012Date of Patent: October 20, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Ha Jong Bong
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Publication number: 20150287876Abstract: One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive AlxGa(1-x)N/AlyGa(1-y)N (here, AlxGa(1-x)N/AlyGa(1-y)N) on the active layer (114).Type: ApplicationFiled: October 22, 2013Publication date: October 8, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150270436Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: ApplicationFiled: October 8, 2013Publication date: September 24, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150255669Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: ApplicationFiled: September 24, 2013Publication date: September 10, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Patent number: 9099611Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.Type: GrantFiled: January 7, 2013Date of Patent: August 4, 2015Assignees: LG INNOTEK CO., LTD., TAMURA CORPORATION, KOHA CO., LTD.Inventor: Yong Tae Moon