Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.

Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.

Abstract: Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 ?m to 5 ?m.

Abstract: A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.

Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.

Abstract: A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.

Abstract: Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including gallium aluminum, and a light emitting structure over the nitride including gallium aluminum.

Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.

Abstract: Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate.

Abstract: Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition.

Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.

Abstract: The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Abstract: Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer.

Abstract: A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to emit a light of a first wavelength; and a re-emission layer disposed on the light emitting structure, the re-emission layer comprising a nitride semiconductor, wherein the re-emission layer absorbs the light of the first wavelength range and the re-emission layer emits a light of a second wavelength range longer than the first wavelength range, and the re-emission layer is configured of multi layers having different indium (In) compositions, respectively, and the indium content in the multi-layer is largest in a top layer of the multi-layers.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.