Patents by Inventor Yong Tae Moon

Yong Tae Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8987757
    Abstract: Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: March 24, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Dae Seob Han, Jeong Sik Lee
  • Publication number: 20150021545
    Abstract: The light emitting device includes a first conductive type semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum wall (114b) on the first conductive type semiconductor layer (112), an undoped last barrier layer (127) on the active layer (114). An AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127) and a second conductive type semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
    Type: Application
    Filed: July 17, 2014
    Publication date: January 22, 2015
    Inventors: Yong Tae Moon, Hyun Chul Lim
  • Publication number: 20140361246
    Abstract: A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
    Type: Application
    Filed: June 10, 2014
    Publication date: December 11, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Yong Tae MOON, Hyun Chul Lim
  • Patent number: 8779425
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: July 15, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
  • Patent number: 8686400
    Abstract: Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: April 1, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8680569
    Abstract: A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: March 25, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8669545
    Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: March 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Seon Song, Yong Tae Moon
  • Patent number: 8618566
    Abstract: Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including ?-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: December 31, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Soon Yim, Jeong Sik Lee
  • Patent number: 8536557
    Abstract: Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: September 17, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Seoung Hwan Park
  • Publication number: 20130228746
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
    Type: Application
    Filed: March 26, 2013
    Publication date: September 5, 2013
    Inventors: Yong Tae MOON, Jeong Sik LEE, Dae Seob HAN
  • Patent number: 8482021
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: July 9, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sun Kyung Kim, Yong Tae Moon
  • Patent number: 8450719
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: May 28, 2013
    Assignees: LG Innotek, Co. Ltd., LG Electronics, Inc.
    Inventor: Yong Tae Moon
  • Patent number: 8431938
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: April 30, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8426844
    Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: April 23, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Yong Seon Song, Jong hak Won, Jeong Sik Lee, Jung Hun Jang
  • Patent number: 8421075
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
  • Patent number: 8372727
    Abstract: Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8368087
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: February 5, 2013
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Yong Tae Moon
  • Patent number: 8349743
    Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: January 8, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Publication number: 20120319079
    Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
    Type: Application
    Filed: February 24, 2012
    Publication date: December 20, 2012
    Inventors: Dae Seob HAN, Yong Tae Moon, Jong-In Shim
  • Patent number: 8212265
    Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: July 3, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventors: Dae Seob Han, Yong Tae Moon