Patents by Inventor Yong-Uk Lee
Yong-Uk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210159294Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.Type: ApplicationFiled: May 28, 2020Publication date: May 27, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Ajeong CHOI, Yong Uk LEE, Chul BAIK
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Patent number: 10854831Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.Type: GrantFiled: November 6, 2017Date of Patent: December 1, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Ajeong Choi, Youngjun Yun, Yong Uk Lee, Suk Gyu Hahm
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Publication number: 20200203809Abstract: A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.Type: ApplicationFiled: February 18, 2020Publication date: June 25, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Chul BAIK, Yong Uk LEE, Eung Yeoul YOON, Dong Hyun SOHN, Nak Hyun KIM, Byung Ha PARK, Joon-Young CHOI, Won Bin HONG
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Patent number: 10651255Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.Type: GrantFiled: November 29, 2017Date of Patent: May 12, 2020Assignee: Samsung Electronics Co. Ltd.Inventors: Ajeong Choi, Suk Gyu Hahm, Jeong Il Park, Yong Uk Lee, Jong Won Chung
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Patent number: 10573955Abstract: A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.Type: GrantFiled: December 22, 2015Date of Patent: February 25, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chul Baik, Yong Uk Lee, Eung Yeoul Yoon, Dong Hyun Sohn, Nak Hyun Kim, Byung Ha Park, Joon-Young Choi, Won Bin Hong
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Patent number: 10269913Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.Type: GrantFiled: January 8, 2018Date of Patent: April 23, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Suk Gyu Hahm, Jeong Il Park, Youngjun Yun, Joo Young Kim, Yong Uk Lee
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Publication number: 20190035868Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.Type: ApplicationFiled: November 29, 2017Publication date: January 31, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Ajeong Choi, Suk Gyu Hahm, Jeong II Park, Yong Uk Lee, Jong Won Chung
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Publication number: 20180269413Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.Type: ApplicationFiled: November 6, 2017Publication date: September 20, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Ajeong CHOI, Youngjun Yun, Yong Uk Lee, Suk Gyu Hahm
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Publication number: 20180233569Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.Type: ApplicationFiled: January 8, 2018Publication date: August 16, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Suk Gyu Hahm, Jeong Il Park, Youngjun Yun, Joo Young Kim, Yong Uk Lee
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Publication number: 20180123064Abstract: A method of manufacturing an organic thin film transistor includes forming a gate insulating layer on a gate electrode, forming a mold on the gate insulating layer, the mold including a void, forming a self-assembled layer from a self-assembled layer precursor in the void of the mold, removing the mold, and forming an organic semiconductor on the gate insulating layer.Type: ApplicationFiled: October 16, 2017Publication date: May 3, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Ajeong Choi, Joo Young Kim, Youngjun Yun, Yong-Uk Lee, Jiyoung Jung
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Publication number: 20160344089Abstract: A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.Type: ApplicationFiled: December 22, 2015Publication date: November 24, 2016Applicant: Samsung Electronics Co., Ltd.Inventors: Chul BAIK, Yong Uk LEE, Eung Yeoul YOON, Dong Hyun SOHN, Nak Hyun KIM, Byung Ha PARK, Joon-Young CHOI, Won Bin HONG
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Patent number: 9407908Abstract: An image display apparatus and a method for operating the same are disclosed. The method for operating an image display apparatus includes receiving an image, separating the image into at least one of a two-dimensional (2D) image area or a three-dimensional (3D) image area, and displaying the at least one of the 2D or 3D image areas along with an area control object for changing a position or size of the 2D or 3D image area, on a display.Type: GrantFiled: August 20, 2010Date of Patent: August 2, 2016Assignee: LG ELECTRONICS INC.Inventor: Yong Uk Lee
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Thin film transistor array panel using organic semiconductor and a method for manufacturing the same
Patent number: 8319223Abstract: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.Type: GrantFiled: December 17, 2010Date of Patent: November 27, 2012Assignee: Samsung Display Co., Ltd.Inventors: Bo Sung Kim, Mun-Pyo Hong, Min-Seong Ryu, Yong-Uk Lee -
Publication number: 20120242808Abstract: An image display apparatus and a method for operating the same are disclosed. The method for operating an image display apparatus includes receiving an image, separating the image into at least one of a two-dimensional (2D) image area or a three-dimensional (3D) image area, and displaying the at least one of the 2D or 3D image areas along with an area control object for changing a position or size of the 2D or 3D image area, on a display.Type: ApplicationFiled: August 20, 2010Publication date: September 27, 2012Applicant: LG ELECTRONICS INC.Inventor: Yong Uk Lee
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Patent number: 8258004Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.Type: GrantFiled: September 16, 2009Date of Patent: September 4, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Joon-hak Oh, Mun-pyo Hong, Bo-sung Kim, Yong-uk Lee
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Publication number: 20120182402Abstract: The present invention relates to a video display device and an operating method therefore. An operating method for a video display device according to one embodiment of the present invention comprises the steps of: determining whether or not a text is contained in an input video; determining whether or not a text display mode is a 2D text display mode when a text is contained in the video; separating a text region in the video when the text display mode is a 2D text display mode; performing 3D signal processing on the video region separated from the text region; performing 2D signal processing on the text region; and displaying the 2D signal-processed text region and the 3D signal-processed video region on a display. Accordingly, text can be displayed clearly when a 3D video is displayed.Type: ApplicationFiled: June 22, 2010Publication date: July 19, 2012Applicant: LG ELECTRONICS INC.Inventors: Sang Kyu Hwangbo, Yong Uk Lee
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Patent number: 8039296Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.Type: GrantFiled: October 25, 2010Date of Patent: October 18, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-Sung Kim, Yong-Uk Lee, Mun-Pyo Hong
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Patent number: 7994494Abstract: An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.Type: GrantFiled: August 18, 2006Date of Patent: August 9, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-Sung Kim, Mun-Pyo Hong, Yong-Uk Lee, Joon-Hak Oh, Keun-Kyu Song, Seung-Hwan Cho
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THIN FILM TRANSISTOR ARRAY PANEL USING ORGANIC SEMICONDUCTOR AND A METHOD FOR MANUFACTURING THE SAME
Publication number: 20110084260Abstract: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.Type: ApplicationFiled: December 17, 2010Publication date: April 14, 2011Applicant: SAMSUNG ELECTRONICS CO., LTDInventors: Bo Sung KIM, Mun-Pyo HONG, Min-Seong RYU, Yong-Uk LEE -
Publication number: 20110039363Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Inventors: Bo-Sung KIM, Yong-Uk Lee, Mun-Pyo Hong