Abstract: The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

Abstract: An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.

Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes forming a gate line on an insulating plastic or glass substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer, the data line and the drain electrode comprising a first conductive film and a second conductive film of indium tin oxide (ITO) or indium zinc oxide (IZO) that has a work function similar to that of the organic semiconductor that is deposited overlapping the data line and the drain electrode; forming a passivation layer on the organic semiconductor; and forming a pixel electrode connected to the drain electrode on the passivation and the gate insulating layer.

Abstract: The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.

Abstract: An organic thin film transistor array panel includes a substrate, a data line disposed on the substrate, a gate line intersecting the data line and including a gate electrode, a gate insulating layer disposed on the gate line and having a contact hole exposing the data line, a first electrode disposed on the gate insulating layer and electrically connected to the data line through the contact hole, a second electrode disposed opposite the first electrode with respect to the gate electrode, an organic semiconductor disposed on and contacting the first and the second electrodes, and a conductive stopper disposed on the organic semiconductor.

Abstract: An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3) ??(2), and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

Abstract: A thin film transistor array panel according to the present invention includes: an insulating substrate; a gate wire formed on the insulating substrate and including a plurality of gate portions and a gate connection connecting the gate portions; a data wire insulated from the gate wire and intersecting the date wire; a thin film transistor connected to the gate wire and the data wire; and a pixel electrode connected to the thin film transitor.

Abstract: A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.

Abstract: An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Abstract: A method of manufacturing a flexible display is provided, which includes: adhering a plastic substrate on a supporter using an adhesive; forming a thin film pattern on the plastic substrate; and separating the plastic substrate from the supporter using a solvent including THF (tetrahydrofuran). In this manner, the plastic substrate may be tidily separated from the supporter by using THF.

Abstract: A method of manufacturing a thin film transistor array panel includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; depositing an organic semiconductor layer on the data line, the drain electrode and exposed portions of the gate insulating layer; depositing a protection layer on the organic semiconductor layer; forming a photoresist on the protection layer, the photoresist having positive photosensitivity; etching the protection layer and the organic semiconductor layer using the photoresist as an etch mask; forming a passivation layer on the protection layer, the data line, and the drain electrode, the passivation layer having a contact hole exposing a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode via the contact hole.

Abstract: A method of manufacturing a thin film transistor panel is provided, which includes forming a first signal line on a substrate. The method also includes forming in sequence a first insulating layer and a semiconductor layer on the first signal line. The method further includes patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer. The method also includes forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.

Abstract: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

Abstract: An electrophoretic display (EPD) shows high contrast and color display. The present invention blocks the channel of the thin film transistor from incident light in order to prevent current leakage. The color display may also include white, black, red, green, blue, yellow, cyan, magenta or other color pigments in the micro-capsule.

Abstract: A method for the recognition of video standards, in which an up/down counter is used to detect the polarity of synchronization pulses. Specifically, a value representing a duration is memorized, a counting value (Q) is produced, this value being incremented when a binary synchronization signal (INCI) is in one state and decremented when this signal is in the other state, a comparison is made of the value representing the duration and the counting value, at a given time, of the synchronization signal, and a signal representing the standard is produced as a function of the result of the comparison. This method is implemented by a circuit comprising a microcontroller, a detection circuit producing a pick-up control logic signal (CAP), a counter producing a counting value (Q) and a register to load the counting value when the pick-up control signal is active.

Abstract: A periodic signal is produced by counting pulses of a clock during a given period of time. The number of pulses counted is divided by a whole number. A count is then made of the number of pulses of this clock whose number corresponds to the quotient of this division. At each batch, a value of a periodic signal is produced.

Abstract: A periodic signal is produced by counting pulses of a clock during a given period of time. The number of pulses counted is divided by a whole number. A count is then made of a batch of pulses of this clock, the number of pulses in this batch corresponds to the quotient of this division. At each time a batch is completed, a value of a periodic signal is produced.