Patents by Inventor Yong-Uk Lee
Yong-Uk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Thin film transistor array panel using organic semiconductor and a method for manufacturing the same
Patent number: 7880170Abstract: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.Type: GrantFiled: August 27, 2004Date of Patent: February 1, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Bo Sung Kim, Mun-Pyo Hong, Min-Seong Ryu, Yong-Uk Lee -
Patent number: 7863086Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.Type: GrantFiled: September 3, 2009Date of Patent: January 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-sung Kim, Soo-jin Kim, Young-min Kim, Keun-kyu Song, Yong-uk Lee, Mun-pyo Hong, Tae-young Choi, Joon-hak Oh
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Patent number: 7842538Abstract: An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.Type: GrantFiled: January 16, 2008Date of Patent: November 30, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Uk Lee, Bo-Sung Kim, Min-Seong Ryu, Mun-Pyo Hong
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Patent number: 7838872Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.Type: GrantFiled: March 3, 2006Date of Patent: November 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-Sung Kim, Yong-Uk Lee, Mun-Pyo Hong
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Patent number: 7808044Abstract: The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.Type: GrantFiled: July 27, 2006Date of Patent: October 5, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-uk Lee, Joon-hak Oh, Bo-sung Kim, Mun-pyo Hong
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Patent number: 7804639Abstract: An electrophoretic display having a pair of substrates separated by a microcapsule layer, a plurality of pixels formed at the intersections of rows of gate lines and columns of data lines on at least one of the substrates, wherein at least one of said substrates is sufficiently flexible when touched to change the separation between said substrates at any of said pixels, a plurality of sense signal lines formed parallel to the data lines, and a sense signal processing unit connected with the sense signal lines for sensing a change in capacitance between said substrates at any of said pixel.Type: GrantFiled: January 7, 2009Date of Patent: September 28, 2010Assignee: Samsung Electronics Co., Ltd.Inventor: Yong-Uk Lee
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Patent number: 7712888Abstract: An inkjet printing system according to an exemplary embodiment of the present invention includes an inkjet printing chamber depositing ink on a substrate, and a drying chamber spaced from inkjet printing chamber by a predetermined interval and drying the ink by regulating a vapor pressure of a solvent of the ink deposited on substrate. The drying chamber is provided separately, and the vapor pressure of the solvent within the drying chamber is regulated, so that the drying speed of the ink is regulated so as to improve the crystallinity of the organic semiconductor.Type: GrantFiled: October 6, 2006Date of Patent: May 11, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Uk Lee, Mun-Pyo Hong, Joon-Hak Oh
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Patent number: 7692188Abstract: A display device includes an insulation substrate, a source electrode and a drain electrode disposed on the insulation substrate and distanced from each other and including a channel area interposed therebetween, a wall exposing portions of the source electrode and the drain electrode, and defining an opening area surrounding the channel area, and an organic semiconductor layer covering the channel area, and comprising a first sub layer and a second sub layer having different grain sizes.Type: GrantFiled: April 25, 2007Date of Patent: April 6, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-hwan Cho, Yong-uk Lee, Min-ho Yoon
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Patent number: 7682886Abstract: The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.Type: GrantFiled: December 1, 2008Date of Patent: March 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-sung Kim, Joon-hak Oh, Yong-uk Lee
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Patent number: 7679712Abstract: A liquid crystal display includes a data line and a gate line including a gate electrode on a first substrate, a first partition on the gate and data lines and including a first opening exposing the gate electrode, a gate insulator in the first opening, a source electrode on the gate insulator, a pixel electrode including a drain electrode facing the source electrode and on the gate insulator, a second partition on the source and pixel electrodes and including a second opening exposing portions of the source and drain electrodes, an organic semiconductor in the second opening, a second substrate facing the first substrate and a liquid crystal layer between the first and second substrates and having a same thickness as the second partition.Type: GrantFiled: September 5, 2006Date of Patent: March 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Keun-Kyu Song, Seung-Hwan Cho, Yong-Uk Lee
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Publication number: 20100006832Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.Type: ApplicationFiled: September 16, 2009Publication date: January 14, 2010Inventors: Joon-hak Oh, Mun-pyo Hong, Bo-sung kim, Yong-uk Lee
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Patent number: 7638802Abstract: A flat panel display includes a plurality of gate lines; a plurality of data lines insulated with the gate lines, the data lines defining a pixel by intersecting the gate line; and a thin film transistor (TFT) being provided in each of the pixels and containing an organic semiconductor layer, wherein a distance between the adjacent TFTs in a direction extended to the gate line is longer than a width of the pixel in a direction extended to the gate line.Type: GrantFiled: August 18, 2006Date of Patent: December 29, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Keun-kyu Song, Yong-uk Lee
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Patent number: 7638358Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.Type: GrantFiled: November 17, 2006Date of Patent: December 29, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Joon-hak Oh, Mun-pyo Hong, Bo-sung Kim, Yong-uk Lee
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Publication number: 20090317942Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.Type: ApplicationFiled: September 3, 2009Publication date: December 24, 2009Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Bo-sung KIM, Soo-jin KIM, Young-min KIM, Keun-kyu SONG, Yong-uk LEE, Mun-pyo HONG, Tae-young CHOI, Joon-hak OH
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Patent number: 7619608Abstract: An electrophoretic display (EPD) shows a high contrast and a color display. The EPD blocks a channel of a thin film transistor from an incident light in order to prevent a current leakage. The color display may also include a white, black, red, green, blue, yellow, cyan, magenta or other color pigment in a micro-capsule.Type: GrantFiled: April 22, 2004Date of Patent: November 17, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Uk Lee, Bo-Sung Kim, Mun-Pyo Hong
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Patent number: 7619245Abstract: The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.Type: GrantFiled: August 1, 2006Date of Patent: November 17, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Bo-sung Kim, Joon-hak Oh, Yong-uk Lee
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Patent number: 7605395Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.Type: GrantFiled: May 12, 2006Date of Patent: October 20, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Keun-kyu Song, Yong-uk Lee, Mun-pyo Hong, Tae-young Choi, Joon-hak Oh, Bo-sung Kim, Soo-jin Kim, Young-min Kim
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Patent number: 7582903Abstract: A thin film transistor array panel according to the present invention includes: an insulating substrate; a gate wire formed on the insulating substrate and including a plurality of gate portions and a gate connection connecting the gate portions; a data wire insulated from the gate wire and intersecting the date wire; a thin film transistor connected to the gate wire and the data wire; and a pixel electrode connected to the thin film transitor.Type: GrantFiled: March 4, 2003Date of Patent: September 1, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Mun-Pyo Hong, Yong-Uk Lee, Bo-Sung Kim
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Patent number: 7572667Abstract: A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.Type: GrantFiled: January 20, 2006Date of Patent: August 11, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Seong Ryu, Bo-Sung Kim, Yong-Uk Lee
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Publication number: 20090135470Abstract: An electrophoretic display having a pair of substrates separated by a microcapsule layer, a plurality of pixels formed at the intersections of rows of gate lines and columns of data lines on at least one of the substrates, wherein at least one of said substrates is sufficiently flexible when touched to change the separation between said substrates at any of said pixels, a plurality of sense signal lines formed parallel to the data lines, and a sense signal processing unit connected with the sense signal lines for sensing a change in capacitance between said substrates at any of said pixel.Type: ApplicationFiled: January 7, 2009Publication date: May 28, 2009Inventor: Yong-Uk LEE