Patents by Inventor Yong-Won Cha
Yong-Won Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240092141Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.Type: ApplicationFiled: March 8, 2023Publication date: March 21, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DOOWON CLIMATE CONTROL CO., LTD.Inventors: Kwang Ok Han, Young Tae Song, Yong Chul Kim, Gee Young Shin, Su Yeon Kang, Jae Sik Choi, Dae Hee Lee, Byeong Moo Jang, Ung Hwi Kim, Jae Won Cha, Won Jun Joung, Byung Guk An
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Publication number: 20220052018Abstract: The present invention relates to a substrate aligning device for bonding a first substrate (100) and a second substrate (200), wherein the first substrate (100) and the second substrate (200) have respective bonding surfaces via which the first substrate (100) and the second substrate (200) are bonded face-to-face with each other, and respective non-bonding surfaces which are located on the reverse sides from the bonding surfaces.Type: ApplicationFiled: July 19, 2019Publication date: February 17, 2022Applicant: L TRIN.CO.,LTDInventors: Yong Won CHA, Mi Ok CHO, Ji Soo CHO, Dae Hyeon KIM
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Patent number: 8999099Abstract: A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.Type: GrantFiled: November 26, 2010Date of Patent: April 7, 2015Assignee: Ltrin. Co., Ltd.Inventors: Yong-Won Cha, Sang Wook Yoo, Gun-Woo Park, Seung-Hee Jung
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Publication number: 20140322834Abstract: An apparatus for bonding substrates and a method of bonding substrates are provided. In accordance with one exemplary embodiment of the present invention, a first plate to mount a first substrate is provided. A chamber body movably connected to the first plate is provided. A second plate that is placed opposite to the first plate and a second substrate is mounted on the second plate is provided. A chamber lead having the second plate mounted inside is provided which is movably connected to the chamber body to move rotationally or linearly to open or close the chamber space with the chamber body. A pair of first alignment cameras is placed outside of the chamber space to scan the first substrate or the second substrate. A stage control unit is provided to move the first plate or the second plate to align the first substrate and the second substrate.Type: ApplicationFiled: April 28, 2014Publication date: October 30, 2014Applicant: LTrin Co., LtdInventors: Yong Won CHA, Chang Woo RYOO, Sang Jun OH, Gun Woo PARK, Jae In PARK
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Publication number: 20120298306Abstract: A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.Type: ApplicationFiled: November 26, 2010Publication date: November 29, 2012Applicant: LTRIN. CO., LTDInventors: Yong-Won Cha, Sang Wook Yoo, Gun-Woo Park, Seung-Hee Jung
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Patent number: 8278186Abstract: The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber.Type: GrantFiled: October 31, 2007Date of Patent: October 2, 2012Assignee: Ltrin Co., Ltd.Inventors: Yong Won Cha, Dong Chul Kim
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Patent number: 7781302Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.Type: GrantFiled: February 7, 2007Date of Patent: August 24, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Dae-Lok Bae
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Patent number: 7605022Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.Type: GrantFiled: January 9, 2007Date of Patent: October 20, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Dong-Chul Suh, Dae-Lok Bae
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Patent number: 7598177Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.Type: GrantFiled: April 11, 2006Date of Patent: October 6, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Kyu-tae Na
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Publication number: 20090221133Abstract: Methods of fabricating SOI wafers are provided including providing a donor wafer and forming a hydrogen ion implantation layer in the donor wafer. A circumference portion of one side of the donor wafer is recessed to form a height difference. The one side of the donor wafer and a handle wafer are bonded to form a bonded wafer. The bonded wafer is heat treated to separate the bonded wafer along the hydrogen ion implantation layer.Type: ApplicationFiled: February 13, 2009Publication date: September 3, 2009Inventors: Seung-Woo Choi, Dae-Lok Bae, Jong-Wook Lee, Yong-Won Cha, Pil-Kyu Kang, Jung-Ho Kim
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Patent number: 7560383Abstract: In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.Type: GrantFiled: April 5, 2006Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Kyong-Hee Joo, Yong-Won Cha, Seung-Hyun Lim, In-Seok Yeo, Kyu-Tae Na
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Patent number: 7470603Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.Type: GrantFiled: February 2, 2007Date of Patent: December 30, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Sung-Kwan Kang, Pil-Kyu Kang, Yong-Hoon Son, Jong-Wook Lee
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Patent number: 7332409Abstract: A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.Type: GrantFiled: June 9, 2005Date of Patent: February 19, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Kyu-Tae Na, Yong-Soon Choi, Eunkee Hong, Ju-Seon Goo
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Publication number: 20080014726Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.Type: ApplicationFiled: February 2, 2007Publication date: January 17, 2008Inventors: Yong-Won Cha, Sung-Kwan Kang, Pil-Kyu Kang, Yong-Hoon Son, Jong-Wook Lee
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Publication number: 20070269957Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.Type: ApplicationFiled: February 7, 2007Publication date: November 22, 2007Inventors: Yong-Won Cha, Dae-Lok Bae
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Publication number: 20070158831Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.Type: ApplicationFiled: January 9, 2007Publication date: July 12, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Won CHA, Dong-Chul SUH, Dae-Lok BAE
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Publication number: 20060246661Abstract: In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.Type: ApplicationFiled: April 5, 2006Publication date: November 2, 2006Inventors: Kyong-Hee Joo, Yong-Won Cha, Seung-Hyun Lim, In-Seok Yeo, Kyu-Tae Na
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Publication number: 20060183320Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.Type: ApplicationFiled: April 11, 2006Publication date: August 17, 2006Inventors: Yong-Won Cha, Kyu-tae Na
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Patent number: 7056827Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.Type: GrantFiled: August 13, 2004Date of Patent: June 6, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Won Cha, Kyu-tae Na
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Publication number: 20060102940Abstract: The present invention is directed to a semiconductor device having a photodetector and a method of fabricating the same. The photodetector includes a visible ray absorbing pattern disposed on a top and/or bottom surface of an interconnection formed at a light shielding area between adjacent photodetectors, which prevents obliquely incident light from reaching an adjacent photodetector.Type: ApplicationFiled: November 15, 2005Publication date: May 18, 2006Inventors: Yong-Won Cha, Eun-Kyung Baek, Kyu-Tae Na