Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: The present invention relates to an additive manufacturing system and its methods. The system includes a material conveyor, an energy source, and a micro-forging device. The material conveyor is configured to convey material. The energy source is configured to direct an energy beam toward the material, the energy beam fuses at least a portion of the material to form a solidified portion. The micro-forging device is movable along with the material conveyor for forging the solidified portion, wherein the micro-forging device comprises a first forging hammer and a second forging hammer, the first forging hammer is configured to impact the solidified portion to generate a first deformation, and the second forging hammer is configured to impact the solidified portion to generate a second deformation greater than the first deformation.

Abstract: A forging head for additive manufacturing, comprising a base portion and a forging portion. The forging portion extends from the base portion for forging a cladding layer during formation of the cladding layer by additive manufacturing. The forging head further comprising a through hole which is formed through the base portion and the forging portion, for at least one of an energy bean and an additive material to pass through during formation of the cladding layer.

Abstract: A native NMOS device includes: a P-type epitaxial layer, a first and a second insulation region, a first P-type well, a second P-type well, a gate, an N-type source, and an N-type drain. The P-type epitaxial layer has a first concentration of P-type doped impurities. The first P-type well completely encompasses and is in contact with a lower surface of the N-type source. The second P-type well completely encompasses and is in contact with a lower surface of the N-type drain. Each of the first P-type well and the second P-type well has a second concentration of P-type doped impurities, and the second concentration of P-type doped impurities is higher than the first concentration of P-type doped impurities. The second concentration of P-type doped impurities is sufficient for preventing a leakage current from flowing between the N-type drain and the P-type substrate while the native NMOS device is in operation.

Abstract: A catalyst for continuous production of 1,1,1,3-tetrachloropropane through gas-solid reaction as well as a preparation method and use thereof are provided. The catalyst includes a zero-valent iron and phosphorus co-modified carbon material which includes a carbon material as a carrier, a zero-valent iron supported onto the carrier and serving as an active component, and a phosphate functional group formed on the surface of the carbon material. The preparation method includes: co-modifying a carbon material using a ferric salt and organic phosphorus to obtain the catalyst for continuous production of 1,1,1,3-tetrachloropropane through gas-solid reaction. The present application further provides a method for continuous production of 1,1,1,3-tetrachloropropane through gas-solid reaction.

Abstract: Provided is a curved liquid crystal display panel, including a color film substrate and an array substrate. An orthographic projection of the color film substrate on the array substrate is within the array substrate. The color film substrate includes a first side surface and a second side surface. The array substrate includes a third side surface and a fourth side surface. The first side surface is adjacent to and staggered from the third side surface. The second side surface is adjacent to and staggered from the fourth side surface. At positions where the third side surface and the fourth side surface are disposed, each of a side, proximal to the color film substrate, of the array substrate and a side, distal from the color film substrate, of the array substrate includes a structure formed by a grinding process.

Abstract: Disclosed are a stress-resistant, creep-resistant, high-temperature resistant and high-insulation sheath material for a maglev train cable, and a manufacturing method and use thereof. A multiple chemical crosslinking structure is constructed by blending a functional polyvinylsilicone grease with ultra-high molecular weight polyethylene (UHMWPE) and a ceramicized silicone rubber as a cable material matrix and using electron beam irradiation. In addition, organic/inorganic fillers in the matrix can form physical crosslinking points in the material. A physical-chemical dual crosslinking structure is constructed in the matrix, which can limit the motion and relaxation of molecular chains and improve the interaction between the insulation layer and sheath layer and refractory layers such as fillers and mica tapes to avoid the relative displacement during the laying and operation and improve the high-temperature resistance, creep resistance and stress relaxation resistance of a UHMWPE cable sheath material.

Abstract: An integrated structure of semiconductor devices having a shared contact plug includes: a first device, a second device and a shared contact plug. The first device includes a first gate having a conduction region, two spacer regions and a protection region. The two spacer regions overlay and are connected with two ends of the conductive region, respectively. The protection region overlays and is connected with the spacer region located outside a shared side of the conductive region. The second device includes a shared region, wherein the shared region is located in a semiconductor layer which is located below and outside the protection region. The shared contact plug is formed on and in contact with the conductive region and the shared region. The first gate is electrically connected with the shared region through the shared contact plug, wherein the shared contact plug overlays and is connected with the protection region.

Abstract: A semiconductor device with a pad structure resistant to plasma damage includes: a main pad portion including main conductor units and main via units; a sub-pad portion including sub-conductor units and sub-via units; a pad bonding unit in direct contact with and in connection with a top main conductor unit, wherein the top main conductor unit is the main conductor unit formed in a top metal layer; and a bridge pad unit in direct contact with a top sub-conductor unit, wherein the top sub-conductor unit is the sub-conductor unit formed in the top metal layer. The bridge pad unit is in direct contact with the pad bonding unit. The main pad portion and sub-pad portion are located below the pad bonding unit and bridge pad unit respectively, and the main pad portion and the sub-pad portion are not in direct connection with each other.

Abstract: Methods and systems for employing a sensor to detect disconnection of a liquid supply tank and a low fill level of the liquid supply tank are disclosed herein. The sensor may have a conductive probe to contact liquid, e.g., to detect a liquid level in a removable liquid supply tank.

Abstract: An antenna device is provided to include an antenna radiating assembly, the antenna radiating assembly includes: a first metal plate; at least two antennas including a first mobile communication antenna and a second mobile communication antenna, the first mobile communication antenna and the second mobile communication antenna are respectively perpendicularly provided to a surface of the first metal plate, and the first mobile communication antenna and the second mobile communication antenna are perpendicular to each other; a second metal plate extending from a side of the first metal plate toward the first mobile communication antenna and the second mobile communication antenna. So a small dimension antenna device is provided to consider an antenna dimension and antenna performance at the same time, employ a three-dimensional antenna structure to reduce the dimension, at the same time assure isolation degree between two mobile communication antennas and promote antenna performance.

Abstract: An antenna device includes: a dielectric substrate; a first grounding face, a second grounding face and a third grounding face which are provided on a first face of the dielectric substrate and are isolated from each other; a first primary antenna and a first auxiliary antenna which are provided on the first face, cooperatively act with the first grounding face to operate at a first frequency range and are isolated from each other; a second primary antenna and a second auxiliary antenna which cooperatively act with the first grounding face to operate at a second frequency range and are isolated from each other; a third primary antenna which cooperatively acts with the second grounding face to operate at a third frequency range; and a third auxiliary antenna which cooperatively acts with the third grounding face to operate at the third frequency range.

Abstract: The present invention provides a method for manufacturing a hot-dip galvanized steel sheet, comprising performing a heat treatment step, a hot dip plating step, and an alloying treatment step on a steel sheet having high Si and Mn content. The heat treatment step comprises a first heating phase and a soaking phase; a first heating atmosphere of the first heating stage contains 0.01-0.5% of O2 by volume, and the balance is N2 and inevitable impurities; a soaking atmosphere of the soaking stage contains 0.5% or more of H2 by volume, and the balance is N2 and inevitable impurities; dew points of the first heating atmosphere and the soaking atmosphere are controlled to be greater than or equal to ?20° C. The present invention further provides a hot-dip galvanized steel sheet and a vehicle component.

Abstract: Disclosed is an ultra-high-strength steel having excellent plasticity, comprising in mass percent the chemical elements: C: 0.26-0.30 wt %; Si: 0.8-1.00 wt %; Mn: 2.80-3.30 wt %; Al: 0.04-0.08 wt %; with the balance being Fe and other inevitable impurities. Also disclosed is a manufacturing method for manufacturing the ultra-high-strength steel having excellent plasticity, comprising the following steps: (1) smelting and thin slab continuous casting; (2) heating; (3) hot rolling, wherein an oxide scale on the surface of a hot-rolled steel strip has a thickness of ?6 ?m, and (FeO+Fe3O4)?40 wt % in the oxide scale on the surface of the hot-rolled strip steel; (4) acid pickling or acid pickling and cold rolling; and (5) continuous annealing: annealing at 800-920° C. and performing slow cooling at 3-10° C./s to 690-760° C.; performing fast cooling to 250-350° C. at 50-100° C.; and then heating to 360-460° C., maintaining the temperature for 100-400s and cooling to room temperature.

Abstract: Techniques for low power voice communications include determining a time between an arrival of data for uplink transmission by a device and a scheduling request (SR) occasion, the SR occasion occurring after the arrival of the data and within an on duration of a discontinuous reception (DRX) cycle, and delaying transmission of a SR by the device during a time period that begins at the arrival of the data for uplink transmission and continues for the determined time.

Abstract: A method for creating a virtual machine includes: receiving a virtual machine creation request to create a plurality of virtual machines; dividing the plurality of virtual machines into a plurality of virtual machine groups; determining a home physical rack for each virtual machine group, where one virtual machine group corresponds to one home physical rack; and creating each virtual machine group on the home physical rack of each virtual machine group. Because each virtual machine group is created on a home physical rack to which each virtual machine group belongs, each virtual machine group is equivalent to one physical rack.

Abstract: A polysilicon-insulator-polysilicon (PIP) structure includes: a first polysilicon region formed on a substrate; a first insulation region formed outside one side of the first polysilicon region and adjoined to the first polysilicon region in a horizontal direction; and a second polysilicon region formed outside one side of the first insulation region. The first polysilicon region, the first insulation region and the second polysilicon region are adjoined in sequence in the horizontal direction. The second polysilicon region is formed outside the first insulation region by a first self-aligned process step, and the first insulation region is formed outside the first polysilicon region by a second self-aligned process step.

Abstract: Embodiments of the present invention provide a method, a system, and an apparatus for creating a virtual machine. The method includes: receiving a virtual machine creation request to create a plurality of virtual machines; dividing the plurality of virtual machines into a plurality of virtual machine groups; determining a home physical rack for each virtual machine group, where one virtual machine group corresponds to one home physical rack; and creating each virtual machine group on the home physical rack of each virtual machine group. Because each virtual machine group is created on a home physical rack to which each virtual machine group belongs, each virtual machine group is equivalent to one physical rack.

Abstract: The disclosure relates to a two-dimensional (2D) bismuth nanocomposite, and a preparation method and use thereof, and belongs to the field of nanobiotechnology. The 2D bismuth nanocomposite of the disclosure is an ultra-thin bismuth nanosheet that is loaded with platinum nanoparticles and modified with indocyanine green (ICG) and surface targeting polypeptide Ang-2. The 2D bismuth nanocomposite Bi@Pt/ICG-Ang2 of the disclosure can not only realize the targeted photothermal and photodynamic combination therapy for tumors, but also realize the dual-mode imaging combining CT and fluorescence imaging.