Abstract: A switch capable of decreasing parasitic inductance includes: a semiconductor device, a first top metal line, and a second top metal line. The second top metal line electrically connects a power supply input end and a current inflow end of the semiconductor device, wherein a first part of the first top metal line is arranged in parallel and adjacent to a second part of the second top metal line. When the semiconductor device is in an ON operation, an input current outflows from the power supply input end, and is divided into a first current and a second current. When the first current and the second current flow through the first part and the second part respectively, the first current and the second current flow opposite to each other, to reduce an total parasitic inductance of the first top metal line and the second top metal line.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A hot dipped high manganese steel and a manufacturing method therefor. The high manganese steel comprises a steel base plate and a coating on the surface of the steel base plate. The core of the steel base plate is austenite. The surface layer of the steel base plate is a ferrite fine grain layer. The ferrite fine grain layer comprises an oxide of Al. Furthermore, the steel base plate of the hot dipped high manganese steel comprises, in mass percentages, 10 to 30% of Mn element, 1 to 2% of Al element, and 0.4 to 0.8% of C element. The manufacturing method comprises: 1) manufacturing strip steel; 2) primary annealing and acid washing; 3) secondary annealing and hot dipping.

Abstract: A chip packaging structure includes: at least one semiconductor chip, having a signal processing function; a base material, wherein the semiconductor chip is disposed on the base material; at least one thermal conduction plate, disposed on the base material; and a package material, encapsulating the base material, the thermal conduction plate, and the semiconductor chip. The thermal conduction plate forms at least one thermal conduction channel in the package material.

Abstract: The present invention provides a chip packaging method, which includes: providing a base material, which includes plural finger contacts; disposing plural chips on the base material by flip chip mounting technology, and disposing plural vertical heat conducting elements surrounding each of the chips to connect the finger contacts on the base material; providing a packaging material to encapsulate the base material, the chips, and the vertical heat conducting elements; adhering a metal film on the packaging material via an adhesive layer, to form a package structure; and cutting the package structure into plural chip package units, wherein each of the chip package units includes one of the chips, a portion of the base material, a portion of the metal film, and a portion of the vertical heat conducting elements surrounding the chip.

Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: An antenna device includes an insulating carrier and a first primary antenna having a first feeding-in section, a first auxiliary antenna having a second feeding-in section and a second grounding section, a second primary antenna having a third feeding-in section, a second auxiliary antenna having a fourth feeding-in section and a grounding face which are provided on a face of the carrier. The first primary and auxiliary antennas and the second primary and auxiliary antennas are positioned at two side edges of the carrier which are away from each other. The grounding face is positioned between both the first primary and auxiliary antennas and the second primary and auxiliary antennas. The grounding face is provided with a first grounding section adjacent to the first feeding-in section, a third grounding section adjacent to third feeding-in section and a fourth grounding section adjacent to the fourth feeding-in section.

Abstract: A chip packaging method includes: providing plural chip units; providing a base material, and placing the chip units on the base material; providing an adhesive layer to adhere a metal foil to the chip unit, wherein the metal foil is a part of the base material or additional to the base material; and cutting the chip units on the base material to form plural separated chip package units, wherein each of the chip package units includes a cut metal foil part.

Abstract: Provided is a cold-rolled high-strength steel having a tensile strength of not less than 1500 MPa and an excellent formability, the chemical elements thereof having the following mass percent ratios: 0.25%-0.40% of C, 1.50%-2.50% of Si, 2.0%-3.0% of Mn, 0.03%-0.06% of Al, P?0.02%, S?0.01%, N?0.01% and at least one of 0.1%-1.0% of Cr and 0.1%-0.5% of Mo, with the balance being Fe and other unavoidable impurities. The microstructure of the cold-rolled high-strength steel has 5%-20% of residual austenite and 70%-90% of martensite, and the carbon concentration ratio of the residual austenite to the martensite is greater than 3.5 and less than 15. The cold-rolled high-strength steel sheet has a high strength and an excellent formability through a rational ingredient design and microstructure control.

Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.

Abstract: A low profile dual-frequency antenna device comprises an insulative carrier having a first surface and a second surface which are opposite and a conductor unit, the conductor unit comprises a first conductor which is provided to the first surface and a second conductor which is provided to the second surface and connected with the first conductor, a first radiation slot as a low frequency slot antenna is formed between the first conductor and the second conductor, the first conductor is formed with a second radiation slot, a third radiation slot which is communicated with the first radiation slot and the second radiation slot, a fourth radiation slot and a fifth radiation slot, and the third radiation slot, the fourth radiation slot and the fifth radiation slot together constitute a high frequency slot antenna, the second radiation slot decides an impedance and a resonance frequency width of each antenna, a first side edge and a second side edge is oppositely positioned at a location where the second radiatio

Abstract: The present invent belongs to the technical field of plating by sputtering coating forming materials, and particularly relates to a contact coating of an electrical connector. In the coating, chromium nitride is doped with precious metal elements.

Abstract: A wear-resistant super-hydrophobic protective coating for a substrate includes a pretreated surface and a composite coating. The composite coating is formed of a mixture of a ZrO2 powder, a PTFE powder and a silicone powder by spraying. A method for preparing the protective coating on a substrate is also provided.

Abstract: A system for increasing the efficiency of low pressure axial fans, includes, a low pressure axial fan including multiple first blades, and, a vortex generator operably coupled to the low pressure axial fan via a shaft. In use, the vortex generator includes multiple second blades. In further use, the low pressure axial fan is configured to operate in an operational mode and the vortex generator is configured to operate in a stationary mode.

Abstract: A method for creating a virtual machine includes: receiving a virtual machine creation request to create a plurality of virtual machines; dividing the plurality of virtual machines into a plurality of virtual machine groups; determining a home physical rack for each virtual machine group, where one virtual machine group corresponds to one home physical rack; and creating each virtual machine group on the home physical rack of each virtual machine group. Because each virtual machine group is created on a home physical rack to which each virtual machine group belongs, each virtual machine group is equivalent to one physical rack.

Abstract: This disclosure relates to techniques for performing radio link monitoring and cell searching when moving at high speeds. A movement speed of a wireless device may be determined. When performing a cell search, the manner of the cell search may depend on the movement speed of the wireless device, potentially including cells that are associated with high movement speed being more highly prioritized when the wireless device is determined to be at a higher movement speed than when the wireless device is determined to be at a lower movement speed.

Abstract: The disclosure relates to a two-dimensional (2D) bismuth nanocomposite, and a preparation method and use thereof, and belongs to the field of nanobiotechnology. The 2D bismuth nanocomposite of the disclosure is an ultra-thin bismuth nanosheet that is loaded with platinum nanoparticles and modified with indocyanine green (ICG) and surface targeting polypeptide Ang-2. The 2D bismuth nanocomposite Bi@Pt/ICG-Ang2 of the disclosure can not only realize the targeted photothermal and photodynamic combination therapy for tumors, but also realize the dual-mode imaging combining CT and fluorescence imaging.

Abstract: A data storage method and a physical server are provided. M virtual machines are deployed on a plurality of physical servers. The M virtual machines are respectively deployed as M data nodes in a distributed storage system. A metadata node in the distributed storage system receives a data storage request of a client, and determines identifiers of N virtual machines from the M virtual machines based on stored grouping information. The grouping information records a mapping relationship between a plurality of anti-affinity groups and identifiers of the M virtual machines.

Abstract: The present disclosure provides an electronic device. The electronic device comprises a metal case, a slot antenna, a first dielectric material and a second dielectric material. The slot antenna is provided in the metal case and generates a signal. A dielectric constant of the second dielectric material is greater than a dielectric constant of the first dielectric material. The slot antenna comprises an electrical conductive member. The electrical conductive member is configured to define a slot which is closed at two ends thereof, the first dielectric material and the second dielectric material is provided in the slot, wherein the slot has a length, the length and the first dielectric material together determine that a high frequency band of the signal conforms to a high frequency band of a WIFI protocol, and the length and the first dielectric material together determine that a low frequency band of the signal is greater than a low frequency band of the WIFI protocol.

Abstract: An input output (IO) bandwidth control method, an IO access request processing method, an apparatus, and a system relate to the field of storage technologies, where the IO bandwidth control method, executed by a name node, includes determining an IO bandwidth of each data node in at least one data node and an IO bandwidth of a first tenant, and instructing the at least one data node to allocate the at least one IO bandwidth to the first tenant based on the IO bandwidth of each data node and the IO bandwidth of the first tenant, where the at least one IO bandwidth is in a one-to-one correspondence with the at least one data node, and each IO bandwidth in the at least one IO bandwidth is greater than 0 and is less than or equal to an IO bandwidth of a corresponding data node.