Patents by Inventor Yongjian Qiu

Yongjian Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11024464
    Abstract: A hermetically sealed polymer capacitor and a method of forming the same are disclosed. The method preferably includes dispensing an amount of conductive paste inside a case and inserting one or more capacitor elements into the conductive paste. The conductive paste may surround sides of the one or more capacitor elements. Optionally, a bushing may be placed on the one or more capacitor elements. The bushing may have one or more holes that allow one or more positive leads coupled to the one or more capacitor elements to pass through. A cover is preferably welded to the opening of the case. The capacitor assembly is preferably dried to evacuate moisture from inside the case. The one or more positive leads are preferably welded to one or more metal tubes of a glass to metal seal (GTMS) in the cover to seal the capacitor assembly.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: June 1, 2021
    Assignee: VISHAY ISRAEL LTD.
    Inventors: Alex Eidelman, Pavel Vaisman, Yuri Stangrit, Yongjian Qiu
  • Patent number: 10978254
    Abstract: Disclosed are tantalum capacitors having enhanced volumetric efficiency, effective series resistance, effective series inductance, and high frequency performance when compared to existing tantalum capacitors. Also disclosed is a screening process for tantalum capacitors to enhance reliability.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: April 13, 2021
    Assignee: VISHAY SPRAGUE, INC.
    Inventors: Alex Eidelman, Yongjian Qiu, Pavel Vaisman, Yuri Stangrit, Rita Eisenberg, Natali Ostrovsky
  • Publication number: 20200219659
    Abstract: Disclosed are tantalum capacitors having enhanced volumetric efficiency, effective series resistance, effective series inductance, and high frequency performance when compared to existing tantalum capacitors. Also disclosed is a screening process for tantalum capacitors to enhance reliability.
    Type: Application
    Filed: August 12, 2019
    Publication date: July 9, 2020
    Applicant: VISHAY SPRAGUE, INC.
    Inventors: Alex Eidelman, Yongjian Qiu, Pavel Vaisman, Yuri Stangrit, Rita Eisenberg, Natali Ostrovsky
  • Publication number: 20200075264
    Abstract: A hermetically sealed polymer capacitor and a method of forming the same are disclosed. The method preferably includes dispensing an amount of conductive paste inside a case and inserting one or more capacitor elements into the conductive paste. The conductive paste may surround sides of the one or more capacitor elements. Optionally, a bushing may be placed on the one or more capacitor elements. The bushing may have one or more holes that allow one or more positive leads coupled to the one or more capacitor elements to pass through. A cover is preferably welded to the opening of the case. The capacitor assembly is preferably dried to evacuate moisture from inside the case. The one or more positive leads are preferably welded to one or more metal tubes of a glass to metal seal (GTMS) in the cover to seal the capacitor assembly.
    Type: Application
    Filed: August 28, 2018
    Publication date: March 5, 2020
    Applicant: VISHAY ISRAEL LTD.
    Inventors: Alex Eidelman, Pavel Vaisman, Yuri Stangrit, Yongjian Qiu
  • Patent number: 10381166
    Abstract: Disclosed are tantalum capacitors having enhanced volumetric efficiency, effective series resistance, effective series inductance, and high frequency performance when compared to existing tantalum capacitors. Also disclosed is a screening process for tantalum capacitors to enhance reliability.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: August 13, 2019
    Assignee: Vishay Sprague, Inc.
    Inventors: Alex Eidelman, Yongjian Qiu, Pavel Vaisman, Yuri Stangrit, Rita Eisenberg, Natali Ostrovsky
  • Patent number: 9847179
    Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: December 19, 2017
    Assignee: KEMET Electronics Corporation
    Inventors: Jeffrey Poltorak, Brandon K. Summey, Yongjian Qiu
  • Publication number: 20170345579
    Abstract: Disclosed are tantalum capacitors having enhanced volumetric efficiency, effective series resistance, effective series inductance, and high frequency performance when compared to existing tantalum capacitors. Also disclosed is a screening process for tantalum capacitors to enhance reliability.
    Type: Application
    Filed: May 25, 2016
    Publication date: November 30, 2017
    Applicant: Vishay Sprague, Inc.
    Inventors: Alex Eidelman, Yongjian Qiu, Pavel Vaisman, Yuri Stangrit, Rita Eisenberg, Natali Ostrovsky
  • Patent number: 9236191
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: January 12, 2016
    Assignee: Kemet Electroncis Corporation
    Inventors: Antony P. Chacko, Yang Jin, Randolph S. Hahn, Yongjian Qiu, Philip M. Lessner, Keith R. Brenneman
  • Patent number: 9053866
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: June 9, 2015
    Assignee: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert K. Harrington, Chris Stolarski
  • Publication number: 20150135496
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.
    Type: Application
    Filed: September 19, 2014
    Publication date: May 21, 2015
    Inventors: Antony P. Chacko, Yang Jin, Randolph S. Hahn, Yongjian Qiu, Philip M. Lessner, Keith R. Brenneman
  • Patent number: 9030807
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer wherein the conductive polymeric cathode comprises the coverage enhancement catalyst wherein the conductive polymeric layer has improved coverage of the corners and edges. Coverage enhancing catalyst is removed after coating and curing.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: May 12, 2015
    Assignee: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, Qingping Chen, Yang Jin, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20140301022
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of a non-ionic polyol prior to application of a conducting polymer layer.
    Type: Application
    Filed: May 29, 2014
    Publication date: October 9, 2014
    Inventors: Qingping Chen, Hong Zhang, Antony P. Chacko, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Patent number: 8842418
    Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: September 23, 2014
    Assignee: Kemet Electronics Corporation
    Inventors: Jeffrey Poltorak, Brandon K. Summey, Yongjian Qiu
  • Patent number: 8808403
    Abstract: A process for forming a solid electrolytic capacitor and an electrolytic capacitor formed by the process. The process includes: providing an anode wherein the anode comprises a porous body and an anode wire extending from the porous body; apply a thin polymer layer onto the dielectric, and forming a dielectric on the porous body to form an anodized anode; applying a first slurry to the anodized anode to form a blocking layer wherein the first slurry comprises a first conducting polymer with an median particle size of at least 0.05 ?m forming a layer of crosslinker on the blocking layer; and applying a layer of a second conducting polymer on the layer of crosslinker.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: August 19, 2014
    Assignee: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randolph S. Hahn, Kristen Key, Qingping Chen
  • Patent number: 8771381
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of a non-ionic polyol prior to application of a conducting polymer layer.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: July 8, 2014
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Hong Zhang, Antony P. Chacko, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20140168859
    Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; plating a metal layer on said conductive polymer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
    Type: Application
    Filed: February 19, 2014
    Publication date: June 19, 2014
    Inventors: Jeffrey Poltorak, Brandon Summey, Antony P. Chacko, Yongjian Qiu
  • Publication number: 20140160633
    Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
    Type: Application
    Filed: February 18, 2014
    Publication date: June 12, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Jeffrey Poltorak, Brandon K. Summey, Yongjian Qiu
  • Publication number: 20130250486
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Application
    Filed: May 15, 2013
    Publication date: September 26, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert K. Harrington, Chris Stolarski
  • Patent number: 8520366
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: August 27, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert Harrington, Chris Stolarski
  • Patent number: 8323361
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu