Patents by Inventor Yongjian Qiu

Yongjian Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080250620
    Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.
    Type: Application
    Filed: April 16, 2007
    Publication date: October 16, 2008
    Inventors: Yongjian Qiu, Qingping Chen, Philip M. Lessner, Randy S. Hahn, Cynthia L. Prince, Keith R. Brenneman
  • Publication number: 20080247121
    Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
    Type: Application
    Filed: May 7, 2008
    Publication date: October 9, 2008
    Inventors: Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
  • Patent number: 7342775
    Abstract: An anode with an anode body with a first side and a second side opposite to said first side, multiple anode wires and a conductive polymer cathode.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: March 11, 2008
    Assignee: Kemet Electronics Corporation
    Inventors: Randy S. Hahn, Yongjian Qiu
  • Publication number: 20080010797
    Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
    Type: Application
    Filed: July 6, 2006
    Publication date: January 17, 2008
    Inventors: Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
  • Patent number: 7149074
    Abstract: Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and/or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: December 12, 2006
    Assignee: Cabot Corporation
    Inventors: Jonathon L. Kimmel, Yongjian Qiu
  • Patent number: 7116548
    Abstract: An anode with an anode body with a first side and a second side opposite to said first side. First flutes are on the first side and second flutes on the second side. The first flutes and said second flutes are offset or have different depths.
    Type: Grant
    Filed: August 9, 2005
    Date of Patent: October 3, 2006
    Assignee: Kemet Electronics Corporation
    Inventors: James W. Satterfield, Jr., Lance Paul Thornton, Jeffrey P. Poltorak, Randy Hahn, Yongjian Qiu
  • Publication number: 20060070492
    Abstract: Methods of maximizing a tantalum capacitor's capacitance are disclosed, as well as tantalum flake powder and anodes. A two step milling process can be used to mill tantalum particles into tantalum flake powder having flakes of the desired thickness. This flake powder can then be pressed and sintered thereby forming an anode. Other flake capacitance methods and products are also described.
    Type: Application
    Filed: June 23, 2005
    Publication date: April 6, 2006
    Inventor: Yongjian Qiu
  • Publication number: 20050270725
    Abstract: An anode with an anode body with a first side and a second side opposite to said first side. First flutes are on the first side and second flutes on the second side. The first flutes and said second flutes are offset or have different depths.
    Type: Application
    Filed: August 9, 2005
    Publication date: December 8, 2005
    Inventors: Randolph Hahn, Jeffery Poltorak, James Satterfield, Yongjian Qiu, Lance Thornton
  • Publication number: 20040226630
    Abstract: Methods to form metal oxide material are described. In one process, an oxide film on a metal material is diffused throughout the metal material to form a preferred uniform metal oxide material. The present invention further relates to products formed by the process. Also, the present invention relates to the use of the products in capacitor anodes and other applications.
    Type: Application
    Filed: May 16, 2003
    Publication date: November 18, 2004
    Inventors: John W. Koenitzer, Yongjian Qiu
  • Publication number: 20030026756
    Abstract: Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and/or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.
    Type: Application
    Filed: April 12, 2002
    Publication date: February 6, 2003
    Inventors: Jonathon L. Kimmel, Yongjian Qiu