Patents by Inventor Yongjian Qiu

Yongjian Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8310815
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20120206859
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 16, 2012
    Inventors: Antony P. Chacko, Qingping Chen, Jin Yang, Phillip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20120206860
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of a non-ionic polyol prior to application of a conducting polymer layer.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 16, 2012
    Inventors: Qingping Chen, Hong Zhang, Antony P. Chacko, Phillip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20120069493
    Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 22, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Jeffrey Poltorak, Brandon K. Summey, Yongjian Qiu
  • Publication number: 20120063063
    Abstract: A process for forming a solid electrolytic capacitor and an electrolytic capacitor formed by the process. The process includes: providing an anode wherein the anode comprises a porous body and an anode wire extending from the porous body; apply a thin polymer layer onto the dielectric, and forming a dielectric on the porous body to form an anodized anode; applying a first slurry to the anodized anode to form a blocking layer wherein the first slurry comprises a first conducting polymer with an median particle size of at least 0.05 ?m forming a layer of crosslinker on the blocking layer; and applying a layer of a second conducting polymer on the layer of crosslinker.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 15, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randolph S. Hahn, Kristen Key, Qingping Chen
  • Publication number: 20110252613
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: June 22, 2011
    Publication date: October 20, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Patent number: 7990683
    Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: August 2, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
  • Publication number: 20110149477
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 23, 2011
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert Harrington, Chris Stolarski
  • Publication number: 20100265634
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 21, 2010
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20100246096
    Abstract: A process for forming a capacitor. The process includes providing an anode; providing a dielectric on the anode; exposing the anode to a polymer precursor solution comprising monomer, conjugated oligomer and optionally solvent and polymerizing the polymer precursor. The ratio between monomer and conjugated oligomer ranges from 99.9/0.1 to 75/25 by weight. The solvent content in the polymer precursor solution is from 0 to 99% by weight.
    Type: Application
    Filed: May 19, 2010
    Publication date: September 30, 2010
    Inventors: Qingping Chen, Keith R. Brenneman, Yuhong Ma, Yongjian Qiu, Philip M. Lessner, Randy S. Hahn
  • Patent number: 7754276
    Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: July 13, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: Yongjian Qiu, Qingping Chen, Philip M. Lessner, Randy S. Hahn, Cynthia L. Prince, Keith R. Brenneman
  • Publication number: 20100053849
    Abstract: Porous sintered anode bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelepiped shapes are used, cathode coverage at the edges and corners is non-uniform and failures occur at those locations. Rectangular prisms, obround prisms and cylindrical prisms are formed with transition surfaces at edges and corners, such as chamfers and curves, to enhance cathode layer uniformity. The transition surface greatly enhances the application of polymer slurries.
    Type: Application
    Filed: November 9, 2009
    Publication date: March 4, 2010
    Inventors: Jeffrey Poltorak, Yongjian Qiu, Christian Guerrero, Lance Paul Thornton, Randy S. Hahn, James C. Bates, JR., John Prymak
  • Patent number: 7658986
    Abstract: Porous sintered anode bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelpiped shapes are used, cathode coverage at the edges and corners is non-uniform and failures occur at those locations. Rectangular prisms, obround prisms and cylindrical prisms are formed with transition surfaces at edges and corners, such as chamfers and curves, to enhance cathode layer uniformity. The transition surface greatly enhances the application of polymer slurries.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: February 9, 2010
    Assignee: Kemet Electronics Corporation
    Inventors: Jeffrey Poltorak, Yongjian Qiu, Christian Guerrero, Lance Paul Thornton, Randy S. Hahn, James C. Bates, Jr., John Prymak
  • Patent number: 7563290
    Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: July 21, 2009
    Assignee: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
  • Publication number: 20080299371
    Abstract: Porous sintered anode bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelpiped shapes are used, cathode coverage at the edges and corners is non-uniform and failures occur at those locations. Rectangular prisms, obround prisms and cylindrical prisms are formed with transition surfaces at edges and corners, such as chamfers and curves, to enhance cathode layer uniformity. The transition surface greatly enhances the application of polymer slurries.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 4, 2008
    Inventors: Jeffrey Poltorak, Yongjian Qiu, Christian Guerrero, Lance Paul Thornton, Randy S. Hahn, James C. Bates, JR., John Prymak
  • Publication number: 20080283409
    Abstract: A process for forming a capacitor. The process includes providing an anode; providing a dielectric on the anode; exposing the anode to a polymer precursor solution comprising monomer, conjugated oligomer and optionally solvent and polymerizing the polymer precursor. The ratio between monomer and conjugated oligomer ranges from 99.9/0.1 to 75/25 by weight. The solvent content in the polymer precursor solution is from 0 to 99% by weight.
    Type: Application
    Filed: May 16, 2007
    Publication date: November 20, 2008
    Inventors: Qingping Chen, Keith R. Brenneman, Yuhong Ma, Yongjian Qiu, Philip M. Lessner, Randy S. Hahn
  • Patent number: 7445679
    Abstract: Methods to form metal oxide material are described. In one process, an oxide film on a metal material is diffused throughout the metal material to form a preferred uniform metal oxide material. The present invention further relates to products formed by the process. Also, the present invention relates to the use of the products in capacitor anodes and other applications.
    Type: Grant
    Filed: May 16, 2003
    Date of Patent: November 4, 2008
    Assignee: Cabot Corporation
    Inventors: John W. Koenitzer, Yongjian Qiu
  • Patent number: D586767
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: February 17, 2009
    Assignee: Kemet Electronics Corporation
    Inventors: Christian Guerrero, Jeff Poltorak, Lance Paul Thornton, Yongjian Qiu
  • Patent number: D599309
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: September 1, 2009
    Assignee: Kemet Electronics Corporation
    Inventors: Christian Guerrero, Jeff Poltorak, Lance Paul Thornton, Yongjian Qiu
  • Patent number: D616388
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: May 25, 2010
    Assignee: KEMET Electroncis Corporation
    Inventors: Christian Guerrero, Jeff Poltorak, Lance Paul Thornton, Yongjian Qiu