Abstract: A memory array comprising strings of memory cells comprises a conductor tier. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. The channel-material strings directly electrically couple to the upper and lower conductor materials of the conductor tier. A through-array-via (TAV) region is included and comprises TAVs. The TAVs individually comprise the upper conductor material, the lower conductor material, and a conducting material that is directly below the conductor tier. The lower conductor material is directly against the upper conductor material and directly against the conducting material. The lower conductor material comprises a metal-rich refractory metal nitride directly above and directly against a non-metal-rich refractory metal nitride that is directly against the conducting material.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprising channel-material strings extend through the insulative tiers and the conductive tiers. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. A through-array-via (TAV) region is included and comprises TAVs individually comprising the upper conductor material, the lower conductor material, and a conducting material that is directly below the conductor tier.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: A variety of applications can include apparatus having a memory device structured with an array of memory cells and a complementary metal-oxide-semiconductor (CMOS) device coupled to the array. The CMOS device can include a gate electrode on and contacting the polysilicon gates of a p-channel metal-oxide-semiconductor (PMOS) transistor and a n-channel metal-oxide-semiconductor (NMOS) transistor of the CMOS device, where the gate electrode is a multi-metal stack. The multi-metal stack of the gate electrode can be two levels of different metal compositions.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b).

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b).

Abstract: Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at least some portions of the different types of gates. FET and charge storage transistor gate stacks may be formed. The gate stacks may each include a gate material, an insulative material, and a sacrificial material. The sacrificial material is removed from the FET and charge storage transistor gate stacks. The insulative material of the FET gate stacks is etched through. A conductive material is formed over the FET gate stacks and over the charge storage transistor gate stacks. The conductive material physically contacts the gate material of the FET gate stacks, and is separated from the gate material of the charge storage transistor gate stacks by the insulative material remaining in the charge storage transistor gate stacks. Some embodiments include gate structures.

Abstract: Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.

Abstract: Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at least some portions of the different types of gates. FET and charge storage transistor gate stacks may be formed. The gate stacks may each include a gate material, an insulative material, and a sacrificial material. The sacrificial material is removed from the FET and charge storage transistor gate stacks. The insulative material of the FET gate stacks is etched through. A conductive material is formed over the FET gate stacks and over the charge storage transistor gate stacks. The conductive material physically contacts the gate material of the FET gate stacks, and is separated from the gate material of the charge storage transistor gate stacks by the insulative material remaining in the charge storage transistor gate stacks. Some embodiments include gate structures.

Abstract: Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lower-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-second-tiers or a lower of the upper-second-tiers comprises non-stoichiometric silicon dioxide that has a silicon-to-oxygen atomic ratio greater than 0.5. A higher of the upper-second-tiers that is above said lower upper-second-tier comprises silicon dioxide that has a silicon-to-oxygen atomic ratio less than or equal to 0.5. Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-second-tier or said lower upper-second-tier.

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Bridge material is formed across the trenches laterally-between and longitudinally-along immediately-laterally-adjacent of the memory-block regions. The bridge material comprises longitudinally-alternating first and second regions. The first regions of the bridge material are ion implanted differently than the second regions of the bridge material to change relative etch rate of one of the first or second regions relative to the other in an etching process.

Abstract: Memory circuitry comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. Charge-passage material is in the conductive tiers laterally-outward of the channel-material strings. Storage material is in the conductive tiers laterally-outward of the charge-passage material. At least one of AlOq, ZrOq, and HfOq is in the conductive tiers laterally-outward of the storage material. At least one of (a) and (b) is in the conductive tiers laterally-outward of the at least one of AlOq, ZrOq, and HfOq, where, (a): MoOxNy, where each of “x” and “y” is from 0 to 4.0; and (b): MoMz, where “M” is at least one of W, a Group 7 metal, and a Group 8 metal; “z” being greater than 0 and less than 1.0. Metal material is in the conductive tiers laterally-outward of the at least one of the (a) and the (b). Memory cells are in individual of the conductive tiers.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lower-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-second-tiers or a lower of the upper-second-tiers comprises non-stoichiometric silicon dioxide that has a silicon-to-oxygen atomic ratio greater than 0.5. A higher of the upper-second-tiers that is above said lower upper-second-tier comprises silicon dioxide that has a silicon-to-oxygen atomic ratio less than or equal to 0.5. Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-second-tier or said lower upper-second-tier.

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

Abstract: A memory array comprising strings of memory cells comprises an upper stack above a lower stack. The lower stack comprises vertically-alternating lower conductive tiers and lower insulative tiers. The upper stack comprises vertically-alternating upper conductive tiers and upper insulative tiers. An intervening tier is vertically between the upper and lower stacks. The intervening tier is at least predominantly polysilicon and of different composition from compositions of the upper conductive tier and the upper insulative tier immediately-above the intervening tier and of different composition from compositions of the lower conductive tier and the lower insulative tier immediately-below the intervening tier. Channel-material strings of memory cells extend through the upper stack, the intervening tier, and the lower stack. Other structures and methods are disclosed.