Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: The present application discloses an array substrate, a display apparatus and a method of fabricating an array substrate. The array substrate has a plurality of first bottom-gate type thin film transistors each of which including a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which including a silicon active layer.

Abstract: A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: An OLED display screen, a display panel and a manufacturing method thereof are disclosed in the present disclosure, the method includes: fabricating a TFT array substrate and an OLED component on a substrate, where the OLED component includes a first electrode, a light-emitting layer, and a second electrode; and fabricating a first organic layer on a side of the second electrode away from the substrate, where the first organic layer is capable of chemically reacting with the second electrode.

Abstract: A method for manufacturing a side wire for a substrate and a substrate structure are provided. The method includes: forming a plurality of first pattern structures on a side surface of the substrate, wherein a gap between any adjacent two of the plurality of first pattern structures connects a top surface and a bottom surface of the substrate to each other; forming a conductive material film covering the side surface of the substrate; and removing the plurality of first pattern structures and a portion of the conductive material film that is attached on the plurality of first pattern structures, and maintaining a portion of the conductive material film that is located between any adjacent two of the plurality of first pattern structures as the side wire.

Abstract: A method of forming an array substrate, the array substrate and a display device are provided. The method of forming the array substrate includes: in a case that a display unit is formed on one of two opposite surfaces of a base substrate and a driving circuit is formed on the other of the two opposite surfaces of the base substrate, performing a roughening treatment on edge regions of the two opposite surfaces of the base substrate and a side surface of the base substrate connecting the edge regions of the two opposite surfaces, to form a roughened region; and forming, at the roughened region, a metal wiring connecting a signal input terminal of the display unit and a signal output terminal of the driving circuit.

Abstract: A substrate includes a driving backplane, a plurality of first connecting lines and a plurality of second connecting lines. The driving backplane includes a base substrate, at least one first lead group and at least one second lead group. Each first lead group includes a plurality of first leads, and each second lead group includes a plurality of second leads. A first lead group and a corresponding second lead group is disposed in a peripheral region. The plurality of first connecting lines are disposed on at least one side face of the driving backplane, each first connecting line is electrically connected to at least one first lead. The plurality of second connecting lines are disposed on the at least one side face of the driving backplane, each second connecting line is electrically connected to at least one second lead, and is in contact with a corresponding first connecting line.

Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: An array substrate is disclosed. The array substrate may include a base substrate, gate lines and data lines intersecting the gate lines on the base substrate. The gate lines and the data lines may define a plurality of pixel regions. Each of at least some of the plurality of the pixel regions may be provided with an image sensor. The image sensor may include a sensitive element, a first electrode at one end of the sensitive element, and a second electrode at the other end of the sensitive element. The image sensor may be configured to sense light having image information.

Abstract: The present disclosure discloses a micro LED display panel and a preparation method thereof. The display panel includes a base substrate, including a first surface and a second surface opposite to each other; a plurality of micro LEDs and a driving circuit arranged on the base substrate; and a plurality of through structures and a plurality of metal film connecting portions.

Abstract: An array substrate includes a substrate, a dual-gate oxide thin film transistor TFT, an electrode for display and a polycrystalline silicon TFT. The dual-gate oxide thin film transistor TFT and the electrode for display are located in a sub-pixel on the substrate, and a drain electrode of the dual-gate oxide TFT is electrically connected to the electrode for display.

Abstract: To construct a display substrate, a first metal connection part is formed on a first surface of a base substrate, extending to a first surface edge region, and a second metal connection part is formed on a second surface of the base substrate opposite to the first surface, extending to a second surface edge region. A flexible film formed on the first surface is patterned to expose a portion of the first surface edge region, aligned with the first metal connection part. A portion of the base substrate covered by the first surface edge region is removed. A portion of the flexible film in the first surface edge region is bent to cover at least a portion of a sidewall of the base substrate. A sidewall metal connection part is formed to electrically connect the first and second metal connection parts, and the flexible film is removed.

Abstract: A thin film transistor includes: a bottom gate electrode; a bottom gate electrode insulating layer, a semiconducting active layer and a first insulating layer which are disposed on the bottom gate electrode in sequence; a source electrode and a drain electrode which are disposed at a side of the first insulating layer away from the bottom gate electrode; vias disposed in the first insulating layer at positions which correspond to the source electrode and the drain electrode respectively; and ohmic contact layers disposed on and covering the semiconducting active layer at positions corresponding to the vias respectively. Each of the source electrode and the drain electrode is in contact with a corresponding one of the ohmic contact layers through a corresponding one of the vias.

Abstract: The present disclosure relates to a display panel. The display panel includes a light switching layer, and a color film layer located on the light switching layer, wherein the color film layer includes a diffraction grating. The color film layer further includes a collimating layer located on a side of the diffraction grating facing away from the light switching layer. The color film layer further includes a light splitting layer located between the diffraction grating and the light switching layer.

Abstract: The present disclosure provides a circuit substrate, a method for manufacturing the same, a display substrate and a tiled display device. The circuit substrate includes: a base substrate; a driving circuit on the base substrate; and conductive connection portions. A plurality of grooves is defined in a lateral side of the base substrate; each of the plurality of grooves extends through a top surface and an opposite bottom surface of the base substrate. The driving circuit includes signal lines on the top surface of the base substrate and signal-line leads on the bottom surface of the base substrate. The plurality of conductive connection portions are corresponding to the plurality of grooves in a one-to-one manner; at least one part of the conductive connection portion is in the corresponding groove. The conductive connection portion is connected with the corresponding signal line and the corresponding signal-line lead, respectively.

Abstract: This disclosure provides a liquid crystal display panel. The liquid crystal display panel comprises: a first substrate and a second substrate arranged oppositely, a plurality of main spacers located between the first substrate and the second substrate for supporting cell gap of the liquid crystal display panel, a plurality of auxiliary spacers located between the first substrate and the second substrate, and a plurality of pressure sensing electrodes in one-to-one correspondence with the plurality of auxiliary spacers; wherein a height of the auxiliary spacer is smaller than a height of the main spacer; a material of the auxiliary spacer is a piezoelectric material. This disclosure also discloses a manufacturing method of the liquid crystal display panel and a display device comprising the liquid crystal display panel.

Abstract: An adjustable reflective device includes a base substrate, a reflective film disposed above the base substrate, and an adjustment assembly configured to control reflectivities of different portions of the reflective film.

Abstract: A display panel, fabrication method thereof, and a display device. The display panel includes a substrate and a plurality of pixels disposed on the substrate; each pixel includes a pixel circuit disposed on the substrate; the display panel further includes a pixel defining layer covering the pixel circuit; a surface of the pixel defining layer facing away from the pixel circuit is provided with a plurality of grooves; the plurality of grooves are in one-to-one correspondence with the plurality of pixels; each of the grooves is provided with a light emitting diode electrically connected to the pixel circuit.

Abstract: The present disclosure proposes a manufacturing method for a metal grating, a metal grating, and a display device. The manufacturing method comprises: forming a metal layer, an antireflective layer and a deep UV photoresist layer sequentially on a base substrate; etching the deep UV photoresist layer by a photolithography process, so as to form a grating mask pattern; etching the antireflective layer by a dry etching process with the help of the grating mask pattern, so as to form an etch mask pattern identical to the grating mask pattern; peeling off the grating mask pattern; etching the metal layer by a dry etching process with the help of the etch mask pattern, so as to form metal grating strips; and removing the etch mask pattern, thus forming a metal grating.