Abstract: A color filter substrate, a display panel and a display device are provided. The color filter substrate includes a base plate and a color filter layer formed on the base plate, a photoluminescent layer arranged at a side of the color filter layer away from the base plate, and a brightness enhancement structure arranged at the side of the color filter layer away from the base plate. In the color filter substrate, by arranging the photoluminescent layer and the brightness enhancement structure at the side of the color filter layer away from the base plate, the color filter substrate has a better color gamut and the brightness at a light-outgoing side is increased.

Abstract: A quantum dot photoresist and a manufacturing method thereof, a display substrate and a display device are provided. The manufacturing method of the quantum dot photoresist includes: mixing quantum dots, photodiffusion materials and photoresist mother solution; surface treatment is carried out on the photodiffusion materials or the quantum dots. The quantum dot photoresist prepared by the manufacturing method of the quantum dot photoresist can be applied to the display device, and the photodiffusion materials can refract incident light to the quantum dots, so that light irradiated onto the quantum dots is increased, and thus, a problem of a low utilization rate of the incident light can be solved, and a display effect of the display device can be enhanced.

Abstract: The present disclosure provides a light-diffusion powder, a quantum-dot-containing photoresist, and a quantum-dot-containing color film, and their preparation methods. The light-diffusion powder is obtained from an alkoxysilane having a chemical structure represented by formula (I): where R1 includes a C1—C50 alkyl group, and R? includes one or more of an alkyl and a substituted alkyl group.

Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The method comprises: forming in sequence a light shielding layer, an insulating layer, and a semiconductor layer; and forming a pattern of the light shielding layer, the insulating layer, and the semiconductor layer in one patterning process. A polycrystalline silicon layer can be formed into an active layer and an amorphous silicon layer into the light shielding layer, by using only one mask. The number of masking processes is reduced by one, which simplifies a fabricating process of the thin film transistor.

Abstract: A method for fabricating a COA array substrate, an array substrate and a display device are provided. The COA array substrate includes a photoresist layer disposed on a protection layer, wherein a color filter receiving hole is formed in the photoresist layer, and a color filter layer is formed in the color filter receiving hole, an entire surface of the photoresist layer is flushed with an entire surface of the color filter layer such that the photoresist layer functions as the planarized layer.

Abstract: A production process of a conductive material includes processing graphite oxide into a graphene suspension comprising graphene monolayer nanoflakes, and processing the graphene suspension and metal or metal oxide so as to provide a liquid comprising a composite as the conductive material.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: A method for fabricating a COA array substrate, an array substrate and a display device are provided. The fabrication method comprises the following steps: forming a protection layer (12) on the TFT substrate (11); coating a photoresist layer (21) on the protection layer (12), the photoresist layer (12) functioning as a planarized layer (14), wherein the TFT substrate (11) comprises a substrate (111) and a TFT (112); forming a color filter receiving hole (32) in the photoresist layer (21) through a photolithography process; fabricating the color filter layer (31) in the color filter receiving hole (32). The above fabrication method can reduce the complexity and cost of conventional method for fabricating the array substrate.

Abstract: An array substrate and a method for fabricating the same, and a display device are disclosed. The array substrate comprises light-transmissive regions for display and shading regions, a plurality of thin film transistors are provided in the shading region, the thin film transistor comprises: a base substrate; an active layer, a gate insulating layer, a gate and a passivation layer sequentially provided on the base substrate; and a source and a drain provided on the passivation layer, the source and the drain comprise a conductive shading layer connected to the active layer and a copper layer provided on the conductive shading layer, the conductive shading layer is provided between the active layer and the copper layer, and at least a part of region of the shading region other than the source and the drain is provided with the conductive shading layer.

Abstract: The present invention relates to the field of display technology, and particularly to a display panel and a display device comprising the display panel. The display panel comprises a substrate, which is divided into a plurality of sub-pixel areas, each of which comprises a thin film transistor and an organic light-emitting diode device provided above the thin film transistor, wherein, a pixel define layer and a conductive layer are provided above the thin film transistor and below the organic light-emitting diode device, the pixel define layer is used for defining a light-transmissive region and a non-light-transmissive region of the sub-pixel area, an upper surface of the conductive layer and an upper surface of the pixel define layer are in the same plane, and the conductive layer is electrically connected to a drain of the thin film transistor.

Abstract: This disclosure provides an array substrate, comprising a substrate plate, and a thin film transistor and a pixel electrode formed on the substrate plate, said thin film transistor comprising a source/drain electrode, an active region and a gate electrode stacked sequentially on said substrate plate, wherein said source/drain electrode and said pixel electrode are arranged in the same layer on the substrate plate. According to this disclosure, while the properties of a high reflectivity and a high aperture ratio are guaranteed, the times of the patterning process are decreased and the process steps are saved, resulting in an improved production tempo and an effectively controlled cost. This disclosure also provides a method for fabricating an array substrate, a liquid crystal display panel comprising said array substrate and a reflective liquid crystal display.

Abstract: Disclosed is a display substrate, which includes a base substrate and a polarization layer, wherein the polarization layer includes grid polarizer (GPs) and light-shielding matrixes arranged in a same layer and made from a same material. The display substrate simplifies the production process, reduces the cost and reduces the thickness of a liquid crystal display (LCD) device.

Abstract: A capsule Quantum Dot (QD) composition, a light-emitting diode, preparation methods and a display apparatus are provided. The capsule QD composition includes a mesoporous material in submicron or micron order, quantum dots (QDs) adsorbed in pores of the mesoporous material, and an encapsulation material for packaging the QDs in the pores of the mesoporous material.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: A quantum dot film, its preparation method, its patterning method and its display device are provided. Quantum dots can be efficiently dispersed in a photoresist solution to obtain a quantum dot film with a high concentration of quantum dots. The quantum dot film is prepared from the following raw materials: quantum dots, greater than 0 and less than or equal to 60 parts by weight; a dispersant, from 5 to 90 parts by weight; a resin, from 5 to 45 parts by weight; a monomer containing an unsaturated double bond, from 0.5 to 18 parts by weight; a photoinitiator from 0.1 to 3 parts by weight; silicon coupling agent, from 0.1 to 7 parts by weight; an auxiliary, from 0.1 to 1 part of weight; and a solvent, from 40 to 85 parts by weight. This disclosure can be applied in quantum dot film preparation processes.

Abstract: The embodiments of this disclosure provide a luminescent complex, a luminescent material, a substrate for display and a production method thereof, and a display apparatus. This disclosure relates to the technical field of display. It is possible to increase the dispersibility of the luminescent particles, such as quantum dots or the like in the main material of a color filter to solve problems, such as uneven light emission, low light emission efficiency or the like of a substrate for display comprising the luminescent particles, so as to further reduce the loss of the back light brightness.

Abstract: The present invention discloses a color photoresist and its use, a color film substrate, a display panel and a liquid crystal display, which pertains to the field of photosensitive materials. The color photoresist comprises a photoinitiator and QDs. The photoinitiator is a first photoinitiator containing no electron-rich group or a second photoinitiator containing an electron-rich group. The second photoinitiator comprises a conjugation structure, and the conjugation structure consists of the electron-rich group and an adjacent group of the electron-rich group. The color photoresist provided in embodiments of the present invention contains QDs which emit light normally. The color film substrate prepared by using the color photoresist has a high color gamut and can effectively improve the picture quality of the liquid crystal display.

Abstract: The present disclosure provides a COA substrate, a display device and a method for manufacturing the COA substrate. The COA substrate includes a base substrate, a TFT array arranged on the base substrate, a protective layer covering the TFT array, and a color filter including a color pixel and a white pixel, wherein the white pixel is made of a photoresist material.

Abstract: The embodiments of the invention provide a conductive composition and a method for producing the same, a color filter and a method for producing the same. The invention relates to the display technology field, and can simplify the process for producing the transparent conductive layer, and reduce the production cost; the conductive composition comprises a modified epoxy acrylic resin, a polyurethane acrylic resin, a polyaniline, a photo initiator, a fluorine-containing acrylate monomer, and optionally a filler and an auxiliary agent; wherein, in terms of weight ratio, the modified epoxy acrylic resin comprises 15-30 parts; the polyurethane acrylic resin comprises 10-20 parts; the polyaniline comprises 15-30 parts; the photo initiator comprises 2-4 parts; the fluorine-containing acrylate monomer comprises 15-35 parts; the filler comprises 0-25 parts; and the auxiliary agent comprises 0-8 parts; the conductive composition is useful for producing a display device.

Abstract: The embodiments of the invention provide a conductive composition and a method for producing the same, a color filter and a method for producing the same. The invention relates to the display technology field, and can simplify the process for producing the transparent conductive layer, and reduce the production cost; the conductive composition comprises a modified epoxy acrylic resin, a polyurethane acrylic resin, a polyaniline, a photo initiator, a fluorine-containing acrylate monomer, and optionally a filler and an auxiliary agent; wherein, in terms of weight ratio, the modified epoxy acrylic resin comprises 15-30 parts; the polyurethane acrylic resin comprises 10-20 parts; the polyaniline comprises 15-30 parts; the photo initiator comprises 2-4 parts; the fluorine-containing acrylate monomer comprises 15-35 parts; the filler comprises 0-25 parts; and the auxiliary agent comprises 0-8 parts; the conductive composition is useful for producing a display device.