Patents by Inventor Yongmei Chen

Yongmei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10246518
    Abstract: The presently disclosed subject matter provides antibodies that bind KLB and FGFR1, and methods of using the same. In certain embodiments, an antibody of the present disclosure includes a bispecific antibody that binds to an epitope present on FGFR1 and binds to an epitope present on KLB.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: April 2, 2019
    Assignee: Genentech, Inc.
    Inventors: Yongmei Chen, James Ernst, Hok Seon Kim, Junichiro Sonoda, Christoph Spiess, Scott Stawicki, Yan Wu
  • Publication number: 20180312579
    Abstract: Provided herein are anti-RSPO antibodies, in particular anti-RSPO2 antibodies and/or anti-RSPO3 antibodies, and methods of using the same.
    Type: Application
    Filed: December 11, 2017
    Publication date: November 1, 2018
    Inventors: Elaine Storm, Frederic J. de Sauvage, Jeremy M. Murray, Cameron L. Noland, Yan Wu, Christine Tan, Jo-Anne Hongo, Yongmei Chen
  • Patent number: 10035059
    Abstract: The present invention discloses a flat ground cross-country type roller skate comprising a skate body (1), wherein a wheel assembly at a lower part of the skate body, wherein the wheel assembly comprises a mounting seat (6) used to mount the skate body (1) and a hoisting mechanism disposed on the mounting seat (6). There are at least three wheel assemblies disposed on the hoisting mechanism, and each wheel assembly can hoist independently under the action of the hoisting mechanism. Thus, the wheel assemblies of the roller skate can be hoisted independently so as to adapt to various roads with uneven surface.
    Type: Grant
    Filed: February 14, 2016
    Date of Patent: July 31, 2018
    Inventors: Yongmei Chen, Yongping Chen
  • Publication number: 20180209035
    Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 26, 2018
    Inventors: Jingjing LIU, Ludovic GODET, Srinivas D. NEMANI, Yongmei CHEN, Anantha K. SUBRAMANI
  • Publication number: 20180136065
    Abstract: A device includes a capacitive sensor having a hydrogel structure that includes a first surface and a second surface. A first electrode is provided at the first surface of the hydrogel structure, the first electrode including a network of conductive nanoparticles extending into the hydrogel structure. A second electrode is provided at the second surface of the hydrogel structure.
    Type: Application
    Filed: November 14, 2017
    Publication date: May 17, 2018
    Inventors: Li Tan, Yang Gao, Qin Zhou, Yongmei Chen
  • Publication number: 20180105605
    Abstract: The presently disclosed subject matter provides antibodies that bind KLB and FGFR1, and methods of using the same. In certain embodiments, an antibody of the present disclosure includes a bispecific antibody that binds to an epitope present on FGFR1 and binds to an epitope present on KLB.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 19, 2018
    Inventors: Yongmei Chen, James Ernst, Hok Seon Kim, Junichiro Sonoda, Christoph Spiess, Scott Stawicki, Yan Wu
  • Patent number: 9884919
    Abstract: The presently disclosed subject matter provides antibodies that bind KLB and FGFR1, and methods of using the same. In certain embodiments, an antibody of the present disclosure includes a bispecific antibody that binds to an epitope present on FGFR1 and binds to an epitope present on KLB.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: February 6, 2018
    Assignee: GENENTECH, INC.
    Inventors: Yongmei Chen, James Ernst, Hok Seon Kim, Junichiro Sonoda, Christoph Spiess, Scott Stawicki, Yan Wu
  • Publication number: 20180028899
    Abstract: The present invention discloses a flat ground cross-country type roller skate comprising a skate body (1), wherein a wheel assembly at a lower part of the skate body, wherein the wheel assembly comprises a mourning seat (6) used to mount the skate body (1) and a hoisting mechanism disposed on the mounting seat (6). There are at least three wheel assemblies disposed on the hoisting mechanism, and each wheel assembly can hoist independently under the action of the hoisting mechanism. Thus, the wheel assemblies of the roller skate can be hoisted independently so as to adapt to various roads with uneven surface.
    Type: Application
    Filed: February 14, 2016
    Publication date: February 1, 2018
    Inventors: Yongmei CHEN, Yongping CHEN
  • Patent number: 9879094
    Abstract: The invention provides antibodies to specific neural proteins and methods of using the same.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: January 30, 2018
    Assignee: Genentech, Inc.
    Inventors: Jasvinder Atwal, Yongmei Chen, Cecilia Pui Chi Chiu, Robert A. Lazarus, Weiru Wang, Ryan J. Watts, Yan Wu, Yingnan Zhang
  • Patent number: 9873748
    Abstract: The presently disclosed subject matter provides antibodies that bind KLB and FGFR1, and methods of using the same. In certain embodiments, an antibody of the present disclosure includes a bispecific antibody that binds to an epitope present on FGFR1 and binds to an epitope present on KLB.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: January 23, 2018
    Assignee: GENENTECH, INC.
    Inventors: Yongmei Chen, James Ernst, Hok Seon Kim, Junichiro Sonoda, Christoph Spiess, Scott Stawicki, Yan Wu
  • Patent number: 9865464
    Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: January 9, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Yongmei Chen, Christopher S. Ngai, Jingjing Liu, Jun Xue, Chentsau Ying, Ludovic Godet
  • Publication number: 20170372960
    Abstract: A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.
    Type: Application
    Filed: September 11, 2017
    Publication date: December 28, 2017
    Inventors: Bencherki Mebarki, Huixiong Dai, Yongmei Chen, He Ren, Mehul Naik
  • Patent number: 9761489
    Abstract: A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: September 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Huixiong Dai, Yongmei Chen, He Ren, Mehul Naik
  • Patent number: 9695503
    Abstract: Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cm2 and 10 W/cm2 and a pulse width which is less than 100 ?s and greater than 30 ?s, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: July 4, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Michael W. Stowell, Yongmei Chen
  • Publication number: 20170062216
    Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.
    Type: Application
    Filed: November 10, 2016
    Publication date: March 2, 2017
    Inventors: Yongmei CHEN, Christopher S. NGAI, Jingjing LIU, Jun XUE, Chentsau YING, Ludovic GODET
  • Publication number: 20170058049
    Abstract: The invention provides antibodies to specific neural proteins and methods of using the same.
    Type: Application
    Filed: August 11, 2016
    Publication date: March 2, 2017
    Applicant: Genentech, Inc.
    Inventors: Jasvinder Atwal, Yongmei Chen, Cecilia Pui Chi Chiu, Robert A. Lazarus, Weiru Wang, Ryan J. Watts, Yan Wu, Yingnan Zhang
  • Patent number: 9512217
    Abstract: The present invention relates generally to antibodies cross-reactive with IL-17A and IL-17F, and bispecific anti-IL-17A/F and their uses.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: December 6, 2016
    Assignee: GENENTECH, INC.
    Inventors: Yongmei Chen, Yan (Helen) Hu, Wenjun Ouyang, Scott Stawicki, Yan Wu
  • Patent number: 9502262
    Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: November 22, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yongmei Chen, Christopher S. Ngai, Jingjing Liu, Jun Xue, Chentsau Ying, Ludovic Godet
  • Publication number: 20160319038
    Abstract: The presently disclosed subject matter provides antibodies that bind KLB and FGFR1, and methods of using the same. In certain embodiments, an antibody of the present disclosure includes a bispecific antibody that binds to an epitope present on FGFR1 and binds to an epitope present on KLB.
    Type: Application
    Filed: July 19, 2016
    Publication date: November 3, 2016
    Applicant: GENENTECH, INC.
    Inventors: YONGMEI CHEN, James Ernst, Hok Seon Kim, Junichiro Sonoda, Christoph Spiess, Scott Stawicki, Yan Wu
  • Patent number: 9453079
    Abstract: The invention provides antibodies to specific neural proteins and methods of using the same.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: September 27, 2016
    Assignee: Genentech, Inc.
    Inventors: Jasvinder Atwal, Yongmei Chen, Cecilia Pui Chi Chiu, Robert A. Lazarus, Weiru Wang, Ryan J. Watts, Yan Wu, Yingnan Zhang