Patents by Inventor Yongqian Wang

Yongqian Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12232363
    Abstract: Provided are a display substrate, a manufacturing method thereof and a display apparatus. The display substrate includes multiple sub-pixels, wherein each sub-pixel includes a light-emitting region and a non-light-emitting region, and each sub-pixel is provided with a drive circuit; the drive circuit includes a storage capacitor and multiple transistors; for each sub-pixel, the multiple transistors are in the non-light-emitting region, the storage capacitor is a transparent capacitor, and an orthographic projection of the storage capacitor on a base substrate coincides with the light-emitting region. A first electrode of the storage capacitor is disposed in a same layer as an active layer of the multiple transistors, but in a different layer from source and drain electrodes of the multiple transistors, and a second electrode of the storage capacitor is on a side of the first electrode close to the base substrate.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: February 18, 2025
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Pan Xu, Yongqian Li, Guoying Wang, Dacheng Zhang, Chen Xu, Lang Liu, Xing Zhang, Ling Wang, Yicheng Lin, Ying Han
  • Publication number: 20250056899
    Abstract: The disclosure is applicable to the technical field of solar cells and provides a solar cell and a method for manufacturing thereof, a cell assembly, and a photovoltaic system. In the solar cell, a P-type silicon substrate is used as a base layer, a first surface of the P-type silicon substrate is not completely covered with P-type doped layers, and a second surface of the P-type silicon substrate is not completely covered with N-type doped layers. Moreover, on the P-type silicon substrate, the P-type doped layers are locally arranged on a light-facing surface. In addition, the N-type doped layers are locally arranged on a light-sheltered surface, and a total area of all third regions is set to be greater than that of all first regions.
    Type: Application
    Filed: June 12, 2024
    Publication date: February 13, 2025
    Inventors: Yongqian WANG, Gang CHEN
  • Patent number: 12218258
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: April 25, 2024
    Date of Patent: February 4, 2025
    Assignee: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 12211950
    Abstract: The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: January 28, 2025
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Publication number: 20250022971
    Abstract: The present disclosure discloses an electrode structure of a solar cell, which belongs to the technical field of Photovoltaic (PV) cells and includes a conducting layer, and one end, configured to be connected to the solar cell, of the conducting layer is provided with a seed layer, and a width of the seed layer is less than that of the conducting layer. The present disclosure also discloses the solar cell, a cell module and a power generation system applying the electrode structure.
    Type: Application
    Filed: March 13, 2023
    Publication date: January 16, 2025
    Inventors: Yongqian WANG, Wenli XU, Jianjun ZHANG, Gang CHEN
  • Publication number: 20240363790
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: July 8, 2024
    Publication date: October 31, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240363789
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: July 5, 2024
    Publication date: October 31, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240313136
    Abstract: A back-contact solar cell includes groove area and non-groove area that are alternately disposed on the shady face of silicon chip. At a predetermined position in the groove area, a first doped layer has an extending portion that extends above the groove area, and the second doped layer has a wrapping portion which covers and recombines with the first surface of the extending portion. No silicon wafer part is provided on the side of the position where the wrapping portion recombines with the first surface, and the edge recombination generated by the boundary area between them has a relatively narrow impact range, which can effectively improve the efficiency with a higher filling factor.
    Type: Application
    Filed: November 10, 2023
    Publication date: September 19, 2024
    Inventors: Yongqian WANG, Shengpu LIU, Gang CHEN
  • Publication number: 20240290905
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: May 8, 2024
    Publication date: August 29, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Patent number: 12074246
    Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: August 27, 2024
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Yongqian Wang, Ning Zhang, Wenli Xu, Gang Wang, Gang Chen
  • Publication number: 20240274729
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: April 25, 2024
    Publication date: August 15, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240204115
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: January 22, 2024
    Publication date: June 20, 2024
    Applicant: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 12009440
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: September 29, 2023
    Date of Patent: June 11, 2024
    Assignee: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 11999014
    Abstract: A system may include an emitting device and a controller. The emitting device may be adapted to emit a first laser beam and a second laser beam. The controller may include one or more processors and may be operably coupled to the emitting device to control emission of the first and second laser beams. The controller may be adapted to remove a portion of a workpiece to form an exposed surface of the workpiece with the first laser beam using the emitting device and to remove a portion of the exposed surface with the second laser beam using the emitting device.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: June 4, 2024
    Assignee: Medtronic, Inc.
    Inventors: Xiangnan He, David A. Ruben, Mark E. Henschel, Chunho Kim, Yongqian Wang, Rodney D. Toles
  • Patent number: 11929441
    Abstract: A conductive contact structure of a solar cell is provided, includes a substrate; a semiconductor region; and an electrode. The semiconductor region is disposed on or in the substrate. The electrode is disposed in the semiconductor region. The electrode includes a seed layer in contact with the semiconductor region. The seed layer includes an alloy material, and includes a main component and an improved component. The main component is one or more metals having an average refractive index lower than 2 and a wavelength in a range of 850-1200 nm, and the improved component includes any one or more of Mo, Ni, Ti, W, Cr, Mn, Pd, Bi, Nb, Ta, Pa, Si, and V.
    Type: Grant
    Filed: June 20, 2022
    Date of Patent: March 12, 2024
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Yongqian Wang, Wenli Xu, Jianjun Zhang, Jianbo Hong, Gang Chen
  • Publication number: 20240021741
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: September 29, 2023
    Publication date: January 18, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20230402561
    Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.
    Type: Application
    Filed: June 30, 2023
    Publication date: December 14, 2023
    Inventors: Yongqian WANG, Ning ZHANG, Wenli XU, Gang WANG, Gang CHEN
  • Patent number: 11837671
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: December 5, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Publication number: 20230317866
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 5, 2023
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Patent number: D1032498
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: June 25, 2024
    Assignees: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., ZHUHAI FUSHAN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD ., GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD.
    Inventors: Yongqian Wang, Xinqiang Yang, Gang Chen