Abstract: Provided in the present disclosure are a display substrate and a preparation method therefor, and a display apparatus. The display substrate comprises a plurality of display units, each display unit comprising a display area and a transparent area, and the display area comprising a plurality of sub-pixels; each sub-pixel comprises a second metal layer and a third metal layer, the second metal layer comprising a first scanning line and a second scanning line defining a display row, the third metal layer comprising a first power source line, a second power source line, a compensation line, and a data line defining the plurality of sub-pixels; the first power source line, the second power source line, the compensation line, and the data line all comprise a vertical linear section and a horizontal polyline section.

Abstract: Described are a halogenated hydroxyl terminated polyphosphoester and a prepolymer and a preparation method therefor, as well as a polyurea elastomer composition and a polyurea elastomer and an application.

Abstract: A display substrate and a display device are provided. The display substrate includes a base substrate, a plurality of pixels, a plurality of gate lines and a plurality of data lines, wherein the base substrate has a plurality of transparent regions and a plurality of display regions; the pixels are on the base substrate and within the display regions; each pixel includes a plurality of sub pixels; the sub pixels of each pixel are divided into two rows of sub pixels; the gate lines and the data lines are on the base substrate; the sub pixels of a first pixel are connected with the same gate line; the gate line connected with the sub pixels of the first pixel is between the two rows of sub pixels of the first pixel; and the first pixel is any one of the plurality of pixels.

Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

Abstract: A back-contact solar cell includes groove area and non-groove area that are alternately disposed on the shady face of silicon chip. At a predetermined position in the groove area, a first doped layer has an extending portion that extends above the groove area, and the second doped layer has a wrapping portion which covers and recombines with the first surface of the extending portion. No silicon wafer part is provided on the side of the position where the wrapping portion recombines with the first surface, and the edge recombination generated by the boundary area between them has a relatively narrow impact range, which can effectively improve the efficiency with a higher filling factor.

Abstract: A method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. In some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. The method includes exposing the metal layer to a hydrogen plasma treatment. The hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. In some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.

Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Abstract: A tensegrity offshore wind power generation support structure is provided, relating to the technical field of offshore wind power. The support structure includes inclined columns, prestressed cables, a rigid support, a floating foundation and anchoring systems. A stable self-balancing space supporting structure is formed by the inclined columns and the cables; the inclined columns inclines outwards, upper parts of the inclined columns are connected with the prestressed cables; the bottom ends of the inclined columns are connected with the floating foundation; the middle parts of the inclined columns are connected with the rigid support; and the floating foundation is fixed with a seabed through the anchoring systems. According to the support structure, a tower in the traditional design is not needed, and all the cables are ensured to be in a tension state through the support of the inclined columns.

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Abstract: A system may include an emitting device and a controller. The emitting device may be adapted to emit a first laser beam and a second laser beam. The controller may include one or more processors and may be operably coupled to the emitting device to control emission of the first and second laser beams. The controller may be adapted to remove a portion of a workpiece to form an exposed surface of the workpiece with the first laser beam using the emitting device and to remove a portion of the exposed surface with the second laser beam using the emitting device.

Abstract: A conductive contact structure of a solar cell is provided, includes a substrate; a semiconductor region; and an electrode. The semiconductor region is disposed on or in the substrate. The electrode is disposed in the semiconductor region. The electrode includes a seed layer in contact with the semiconductor region. The seed layer includes an alloy material, and includes a main component and an improved component. The main component is one or more metals having an average refractive index lower than 2 and a wavelength in a range of 850-1200 nm, and the improved component includes any one or more of Mo, Ni, Ti, W, Cr, Mn, Pd, Bi, Nb, Ta, Pa, Si, and V.

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.