Abstract: A cordless vacuum cleaner includes a cleaner main body and a station. The cleaner main body includes a battery and a first processor controlling performing a cleaning function using power of the battery. The station includes a power conversion device to generate a voltage to charge the battery of the cleaner main body, a second charge terminal to charge the battery of the cleaner main body with the voltage generated by the power conversion device, a temperature sensor installed within a distance from the second charge terminal and to detect a temperature of the second charge terminal, a divider resistor to provide a voltage by dividing of an input voltage with the temperature sensor, and a second processor controlling performing an overheating prevention operation based on a voltage level of the voltage provided by the divider resistor and the temperature sensor being greater than a threshold voltage level.

Abstract: A semiconductor device includes a stacked structure including a plurality of gate lines and a plurality of insulation patterns that are alternately stacked in a vertical direction, where the stacked structure defines a vertical hole that extends into the stacked structure and in the vertical direction, a channel film that extends into a vertical hole, and a multiple dielectric layer structure between the channel film and the stacked structure, where the multiple dielectric layer structure includes a plurality of interlayer dielectric layers and a plurality of ferroelectric layers that are alternately stacked and extend from the channel film toward the stacked structure, and where an inner ferroelectric layer of the plurality of ferroelectric layers is thicker than an outer ferroelectric layer of the plurality of ferroelectric layers.

Abstract: A semiconductor device includes: a gate line; a hole extending through the gate line; a channel layer extending lengthwise in a first direction in the hole; a ferroelectric layer arranged between the channel layer and the gate line and extending lengthwise in the first direction in the hole; and a multi-tunneling dielectric structure arranged between the ferroelectric layer and the gate line and extending lengthwise in the first direction in the hole, wherein the multi-tunneling dielectric structure includes: a first silicon oxide film contacting the gate line; a second silicon oxide film spaced apart from the first silicon oxide film in a second direction and contacting the ferroelectric layer, wherein the second direction crosses the first direction; and a silicon oxynitride film disposed between the first silicon oxide film and the second silicon oxide film.

Abstract: A display apparatus includes: a substrate including a first area and a plurality of second areas extending from the first area in different directions from each other; a light emitting device disposed on the first area and including a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode; a first organic layer disposed on the first area, where a distance from an upper surface of the first organic layer to an upper surface of the substrate is greater than a distance from an upper surface of the first electrode to the upper surface of the substrate; and a disconnection portion disposed on the first organic layer and including a tip, an edge of an upper surface of which more protrudes away from a center of the first organic layer than an edge of the upper surface of the first organic layer.

Abstract: A negative electrode active material, including a silicon-carbon composite particle including a plurality of silicon nanoparticles and amorphous carbon, wherein the silicon-carbon composite particle includes closed pores therein, a pore volume of a surface of the silicon-carbon composite particle measured by a BJH method is less than about 0.02 cm3/g, and a volume of the closed pores of the silicon-carbon composite particle calculated by Equation 1 is about 0.015 cm3/g to about 0.05 cm3/g.