Patents by Inventor Yoo Hwan Kim
Yoo Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10305467Abstract: A radio frequency switch circuit includes: a radio frequency switch configured to control a radio frequency signal passing between a signal port and an antenna port; a first buffer configured to generate the first control voltage in response to a second control voltage; a second buffer configured to receive a third control voltage and configured to generate the second control voltage in response to the third control voltage; a first power supplier configured to supply a first high voltage to the first buffer and configured to supply a second high voltage to the second buffer; and a second power supplier configured to supply a first low voltage to the first buffer and configured to supply a second low voltage to the second buffer.Type: GrantFiled: September 1, 2017Date of Patent: May 28, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Hwan Kim, Jong Mo Lim, Yoo Sam Na, Hyun Jin Yoo, Hyun Hwan Yoo
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Patent number: 10274981Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.Type: GrantFiled: November 14, 2017Date of Patent: April 30, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Hwan Yoo, Jong Myeong Kim, Yoo Hwan Kim, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
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Patent number: 10157259Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each transistor of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.Type: GrantFiled: January 17, 2017Date of Patent: December 18, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong Min Jo, Yoo Hwan Kim, Hye Won Shim, Sang Woo Pae
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Publication number: 20180316334Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.Type: ApplicationFiled: July 6, 2018Publication date: November 1, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Sam NA, Jong Mo LIM, Yoo Hwan KIM, Hyun Hwan YOO, Hyun Jin YOO, Seong Jong CHEON
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Patent number: 10050609Abstract: An antenna switch circuit includes: a first switch circuit connected between a first signal port for signal transmission and reception and an antenna port, and operated by a first gate signal; and a second switch circuit connected between a second signal port for signal transmission and reception and the antenna port, and operated by a second gate signal. The first switch circuit and/or the second switch circuit includes a first transistor and a second transistor connected in series between the first and second signal ports, a first voltage dividing circuit including a first resistor and a second resistor connected in series between a source and a drain of the first transistor, and a first variable capacitor circuit connected between the first voltage dividing circuit and a body of the first transistor, and having capacitance varying according to a voltage across opposite ends of the first variable capacitor circuit.Type: GrantFiled: August 30, 2017Date of Patent: August 14, 2018Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin Yoo, Yoo Hwan Kim, Yoo Sam Na, Jong Mo Lim, Hyun Hwan Yoo
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Patent number: 10044341Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.Type: GrantFiled: December 27, 2016Date of Patent: August 7, 2018Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Sam Na, Jong Mo Lim, Yoo Hwan Kim, Hyun Hwan Yoo, Hyun Jin Yoo, Seong Jong Cheon
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Publication number: 20180145679Abstract: A radio frequency switch circuit includes: a radio frequency switch configured to control a radio frequency signal passing between a signal port and an antenna port; a first buffer configured to generate the first control voltage in response to a second control voltage; a second buffer configured to receive a third control voltage and configured to generate the second control voltage in response to the third control voltage; a first power supplier configured to supply a first high voltage to the first buffer and configured to supply a second high voltage to the second buffer; and a second power supplier configured to supply a first low voltage to the first buffer and configured to supply a second low voltage to the second buffer.Type: ApplicationFiled: September 1, 2017Publication date: May 24, 2018Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Yoo Hwan KIM, Jong Mo LIM, Yoo Sam NA, Hyun Jin YOO, Hyun Hwan YOO
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Publication number: 20180097511Abstract: An antenna switch circuit includes: a first switch circuit connected between a first signal port for signal transmission and reception and an antenna port, and operated by a first gate signal; and a second switch circuit connected between a second signal port for signal transmission and reception and the antenna port, and operated by a second gate signal. The first switch circuit and/or the second switch circuit includes a first transistor and a second transistor connected in series between the first and second signal ports, a first voltage dividing circuit including a first resistor and a second resistor connected in series between a source and a drain of the first transistor, and a first variable capacitor circuit connected between the first voltage dividing circuit and a body of the first transistor, and having capacitance varying according to a voltage across opposite ends of the first variable capacitor circuit.Type: ApplicationFiled: August 30, 2017Publication date: April 5, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin YOO, Yoo Hwan KIM, Yoo Sam NA, Jong Mo LIM, Hyun Hwan YOO
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Publication number: 20180074534Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.Type: ApplicationFiled: November 14, 2017Publication date: March 15, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Hwan YOO, Jong Myeong KIM, Yoo Hwan KIM, Yoo Sam NA, Dae Seok JANG, Hyun Jin YOO
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Patent number: 9876496Abstract: A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.Type: GrantFiled: November 30, 2015Date of Patent: January 23, 2018Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin Yoo, Jong Myeong Kim, Yoo Hwan Kim, Hyun Hwan Yoo, Yoo Sam Na, Dae Seok Jang
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Publication number: 20180013407Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.Type: ApplicationFiled: December 27, 2016Publication date: January 11, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Sam NA, Jong Mo LIM, Yoo Hwan KIM, Hyun Hwan YOO, Hyun Jin YOO, Seong Jong CHEON
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Patent number: 9851733Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.Type: GrantFiled: March 17, 2015Date of Patent: December 26, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Hwan Yoo, Jong Myeong Kim, Yoo Hwan Kim, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
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Patent number: 9847781Abstract: A radio frequency switch may include a common port transmitting and receiving a radio frequency signal, a first switching unit including a plurality of first switch elements connected in series and opening or closing a signal transfer path between a first port inputting and outputting the radio frequency signal and the common port, and a second switching unit having a plurality of second switch elements connected in series and opening or closing a signal transfer path between a second port inputting and outputting the radio frequency signal and the common port. The second switching unit further includes a first filter circuit unit connected to a control terminal of at least one second switch element among the plurality of second switch elements to remove at least one preset frequency band signal.Type: GrantFiled: January 29, 2015Date of Patent: December 19, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Sam Na, Jong Myeong Kim, Hyun Jin Yoo, Hyun Hwan Yoo, Yoo Hwan Kim
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Publication number: 20170206302Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.Type: ApplicationFiled: January 17, 2017Publication date: July 20, 2017Inventors: JEONG MIN JO, YOO HWAN KIM, HYE WON SHIM, SANG WOO PAE
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Patent number: 9628070Abstract: A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.Type: GrantFiled: December 2, 2015Date of Patent: April 18, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Seok Jang, Yoo Hwan Kim, Hyun Hwan Yoo, Yoo Sam Na, Jong Myeong Kim, Hyun Jin Yoo
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Publication number: 20170103154Abstract: A circuit design method includes extracting aging information of each of multiple devices from a netlist including one or more devices and a model library including information associated with a process variation. An arithmetic operation is performed using the information associated with the process variation and the aging information to calculate a deviation of the process variation of each device caused by aging. A netlist and/or a model library is extracted in which the calculated deviation is reflected.Type: ApplicationFiled: August 30, 2016Publication date: April 13, 2017Inventors: JONG-WOOK JEON, JAE-HEE CHOI, YOO-HWAN KIM, KEUN-HO LEE, UI-HUI KWON, JONG-CHOL KIM
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Patent number: 9531375Abstract: A radio frequency switch circuit may include: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common connection node and operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common connection node and operated by a second gate signal; a first shunt circuit unit including first and second shunt units connected to each other in series between a first connection node connected to the first signal port and a ground, the first shunt unit being operated by the first gate signal and the second shunt unit being operated by the second gate signal; and a second shunt circuit unit connected between a second connection node connected to the second signal port and the ground and operated by the first gate signal.Type: GrantFiled: January 29, 2015Date of Patent: December 27, 2016Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Sam Na, Jong Myeong Kim, Yoo Hwan Kim, Hyun Hwan Yoo, Dae Seok Jang, Hyun Jin Yoo
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Publication number: 20160285449Abstract: A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.Type: ApplicationFiled: November 30, 2015Publication date: September 29, 2016Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Hyun Jin YOO, Jong Myeong KIM, Yoo Hwan KIM, Hyun Hwan YOO, Yoo Sam NA, Dae Seok JANG
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Patent number: 9389626Abstract: A low-drop-output type voltage regulator may include an error amplifier providing a gate signal depending on a voltage difference between a reference voltage and a feedback voltage, a semiconductor switch adjusting a current between an input terminal receiving a battery voltage and a ground, in response to the gate signal, a feedback circuit dividing and detecting a detection voltage in a detection node between the semiconductor switch and the ground and providing the feedback voltage, a voltage sensor sensing the battery voltage, and a feedback voltage controller adjusting a level of the feedback voltage depending on the sensed battery voltage.Type: GrantFiled: March 27, 2015Date of Patent: July 12, 2016Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoo Hwan Kim, Jong Myeong Kim, Hyun Hwan Yoo, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
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Publication number: 20160156345Abstract: A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.Type: ApplicationFiled: December 2, 2015Publication date: June 2, 2016Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Seok JANG, Yoo Hwan KIM, Hyun Hwan YOO, Yoo Sam NA, Jong Myeong KIM, Hyun Jin YOO