Patents by Inventor Yoo Hwan Kim

Yoo Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10305467
    Abstract: A radio frequency switch circuit includes: a radio frequency switch configured to control a radio frequency signal passing between a signal port and an antenna port; a first buffer configured to generate the first control voltage in response to a second control voltage; a second buffer configured to receive a third control voltage and configured to generate the second control voltage in response to the third control voltage; a first power supplier configured to supply a first high voltage to the first buffer and configured to supply a second high voltage to the second buffer; and a second power supplier configured to supply a first low voltage to the first buffer and configured to supply a second low voltage to the second buffer.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: May 28, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Hwan Kim, Jong Mo Lim, Yoo Sam Na, Hyun Jin Yoo, Hyun Hwan Yoo
  • Patent number: 10274981
    Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: April 30, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan Yoo, Jong Myeong Kim, Yoo Hwan Kim, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
  • Patent number: 10157259
    Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each transistor of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: December 18, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Min Jo, Yoo Hwan Kim, Hye Won Shim, Sang Woo Pae
  • Publication number: 20180316334
    Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.
    Type: Application
    Filed: July 6, 2018
    Publication date: November 1, 2018
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam NA, Jong Mo LIM, Yoo Hwan KIM, Hyun Hwan YOO, Hyun Jin YOO, Seong Jong CHEON
  • Patent number: 10050609
    Abstract: An antenna switch circuit includes: a first switch circuit connected between a first signal port for signal transmission and reception and an antenna port, and operated by a first gate signal; and a second switch circuit connected between a second signal port for signal transmission and reception and the antenna port, and operated by a second gate signal. The first switch circuit and/or the second switch circuit includes a first transistor and a second transistor connected in series between the first and second signal ports, a first voltage dividing circuit including a first resistor and a second resistor connected in series between a source and a drain of the first transistor, and a first variable capacitor circuit connected between the first voltage dividing circuit and a body of the first transistor, and having capacitance varying according to a voltage across opposite ends of the first variable capacitor circuit.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: August 14, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin Yoo, Yoo Hwan Kim, Yoo Sam Na, Jong Mo Lim, Hyun Hwan Yoo
  • Patent number: 10044341
    Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: August 7, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam Na, Jong Mo Lim, Yoo Hwan Kim, Hyun Hwan Yoo, Hyun Jin Yoo, Seong Jong Cheon
  • Publication number: 20180145679
    Abstract: A radio frequency switch circuit includes: a radio frequency switch configured to control a radio frequency signal passing between a signal port and an antenna port; a first buffer configured to generate the first control voltage in response to a second control voltage; a second buffer configured to receive a third control voltage and configured to generate the second control voltage in response to the third control voltage; a first power supplier configured to supply a first high voltage to the first buffer and configured to supply a second high voltage to the second buffer; and a second power supplier configured to supply a first low voltage to the first buffer and configured to supply a second low voltage to the second buffer.
    Type: Application
    Filed: September 1, 2017
    Publication date: May 24, 2018
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Yoo Hwan KIM, Jong Mo LIM, Yoo Sam NA, Hyun Jin YOO, Hyun Hwan YOO
  • Publication number: 20180097511
    Abstract: An antenna switch circuit includes: a first switch circuit connected between a first signal port for signal transmission and reception and an antenna port, and operated by a first gate signal; and a second switch circuit connected between a second signal port for signal transmission and reception and the antenna port, and operated by a second gate signal. The first switch circuit and/or the second switch circuit includes a first transistor and a second transistor connected in series between the first and second signal ports, a first voltage dividing circuit including a first resistor and a second resistor connected in series between a source and a drain of the first transistor, and a first variable capacitor circuit connected between the first voltage dividing circuit and a body of the first transistor, and having capacitance varying according to a voltage across opposite ends of the first variable capacitor circuit.
    Type: Application
    Filed: August 30, 2017
    Publication date: April 5, 2018
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin YOO, Yoo Hwan KIM, Yoo Sam NA, Jong Mo LIM, Hyun Hwan YOO
  • Publication number: 20180074534
    Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 15, 2018
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan YOO, Jong Myeong KIM, Yoo Hwan KIM, Yoo Sam NA, Dae Seok JANG, Hyun Jin YOO
  • Patent number: 9876496
    Abstract: A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: January 23, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin Yoo, Jong Myeong Kim, Yoo Hwan Kim, Hyun Hwan Yoo, Yoo Sam Na, Dae Seok Jang
  • Publication number: 20180013407
    Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.
    Type: Application
    Filed: December 27, 2016
    Publication date: January 11, 2018
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam NA, Jong Mo LIM, Yoo Hwan KIM, Hyun Hwan YOO, Hyun Jin YOO, Seong Jong CHEON
  • Patent number: 9851733
    Abstract: A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: December 26, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan Yoo, Jong Myeong Kim, Yoo Hwan Kim, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
  • Patent number: 9847781
    Abstract: A radio frequency switch may include a common port transmitting and receiving a radio frequency signal, a first switching unit including a plurality of first switch elements connected in series and opening or closing a signal transfer path between a first port inputting and outputting the radio frequency signal and the common port, and a second switching unit having a plurality of second switch elements connected in series and opening or closing a signal transfer path between a second port inputting and outputting the radio frequency signal and the common port. The second switching unit further includes a first filter circuit unit connected to a control terminal of at least one second switch element among the plurality of second switch elements to remove at least one preset frequency band signal.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: December 19, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam Na, Jong Myeong Kim, Hyun Jin Yoo, Hyun Hwan Yoo, Yoo Hwan Kim
  • Publication number: 20170206302
    Abstract: A method for predicting a failure rate of a semiconductor integrated circuit includes receiving a circuit netlist corresponding to circuit defining data, which defines a connection relation, input, output, size, type and operating temperature of each of a plurality of transistors included in the semiconductor integrated circuit. Low-risk transistors having a low-failure probability among the plurality of transistors are detected and filtered out based on the circuit netlist. Failure rates are calculated of respective high-risk transistors other than the low-risk transistors among the plurality of transistors. A total failure rate of the semiconductor integrated circuit is calculated based on the failure rates of the respective high-risk transistors.
    Type: Application
    Filed: January 17, 2017
    Publication date: July 20, 2017
    Inventors: JEONG MIN JO, YOO HWAN KIM, HYE WON SHIM, SANG WOO PAE
  • Patent number: 9628070
    Abstract: A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: April 18, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Dae Seok Jang, Yoo Hwan Kim, Hyun Hwan Yoo, Yoo Sam Na, Jong Myeong Kim, Hyun Jin Yoo
  • Publication number: 20170103154
    Abstract: A circuit design method includes extracting aging information of each of multiple devices from a netlist including one or more devices and a model library including information associated with a process variation. An arithmetic operation is performed using the information associated with the process variation and the aging information to calculate a deviation of the process variation of each device caused by aging. A netlist and/or a model library is extracted in which the calculated deviation is reflected.
    Type: Application
    Filed: August 30, 2016
    Publication date: April 13, 2017
    Inventors: JONG-WOOK JEON, JAE-HEE CHOI, YOO-HWAN KIM, KEUN-HO LEE, UI-HUI KWON, JONG-CHOL KIM
  • Patent number: 9531375
    Abstract: A radio frequency switch circuit may include: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common connection node and operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common connection node and operated by a second gate signal; a first shunt circuit unit including first and second shunt units connected to each other in series between a first connection node connected to the first signal port and a ground, the first shunt unit being operated by the first gate signal and the second shunt unit being operated by the second gate signal; and a second shunt circuit unit connected between a second connection node connected to the second signal port and the ground and operated by the first gate signal.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: December 27, 2016
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam Na, Jong Myeong Kim, Yoo Hwan Kim, Hyun Hwan Yoo, Dae Seok Jang, Hyun Jin Yoo
  • Publication number: 20160285449
    Abstract: A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.
    Type: Application
    Filed: November 30, 2015
    Publication date: September 29, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Jin YOO, Jong Myeong KIM, Yoo Hwan KIM, Hyun Hwan YOO, Yoo Sam NA, Dae Seok JANG
  • Patent number: 9389626
    Abstract: A low-drop-output type voltage regulator may include an error amplifier providing a gate signal depending on a voltage difference between a reference voltage and a feedback voltage, a semiconductor switch adjusting a current between an input terminal receiving a battery voltage and a ground, in response to the gate signal, a feedback circuit dividing and detecting a detection voltage in a detection node between the semiconductor switch and the ground and providing the feedback voltage, a voltage sensor sensing the battery voltage, and a feedback voltage controller adjusting a level of the feedback voltage depending on the sensed battery voltage.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: July 12, 2016
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Hwan Kim, Jong Myeong Kim, Hyun Hwan Yoo, Yoo Sam Na, Dae Seok Jang, Hyun Jin Yoo
  • Publication number: 20160156345
    Abstract: A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 2, 2016
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Dae Seok JANG, Yoo Hwan KIM, Hyun Hwan YOO, Yoo Sam NA, Jong Myeong KIM, Hyun Jin YOO