Abstract: An internal voltage test circuit of a semiconductor memory apparatus includes a comparing unit for comparing a level of internal voltage with a level of external voltage to output a comparison result as an output signal during a test mode, and an output selecting unit for outputting the output signal to a data output pad during the test mode, and outputting a data signal to the data output pad during a normal operation mode.

Abstract: Core voltage generator including a comparison unit configured to compare a reference voltage with a feedback core voltage to output a difference between the reference voltage and the feedback core voltage, an amplification unit configured to output a core voltage by amplifying an external power supply voltage according to an output signal of the comparison unit and a mute unit configured to maintain a voltage level of an output terminal of the amplification unit at a ground voltage level when the output of the core voltage is interrupted.

Abstract: A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.

Abstract: A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.

Abstract: An internal voltage generation circuit of a semiconductor device includes: a voltage detecting unit configured to detect a voltage level of an internal voltage output terminal to output a voltage detection signal; an oscillating unit configured to generate a first oscillation signal having a predefined frequency in response to the voltage detection signal; and a pumping unit configured to perform a charge pumping operation in response to the first oscillation signal and the voltage detection signal to output an internal voltage to the internal voltage output terminal, a period of the charge pumping operation being limited within an activation period of the voltage detection signal.

Abstract: A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.

Abstract: An internal voltage generator supplies a stable internal voltage without increasing standby current. The internal voltage generator includes an internal voltage driver for supplying an internal voltage based on a control signal, a feedback circuit for supplying a feedback voltage having a voltage level proportional to the internal voltage, a control signal generating circuit for generating the control signal to control the internal voltage driver such that the feedback voltage is maintained at a desired reference voltage, an auxiliary driving circuit for additionally supplying the internal voltage in response to the control signal, and an auxiliary driving control circuit for activating the auxiliary driving circuit only when it is expected to dissipate a large amount of a current.

Abstract: A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.

Abstract: A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.

Abstract: An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.

Abstract: A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.

Abstract: A band-gap reference voltage generating apparatus is disclosed. The band-gap reference voltage generating apparatus according to the present invention includes an operational amplifier unit that is driven by a bias voltage and outputs an operational amplifying signal using a first voltage and a second voltage as input voltages; a voltage generating unit that generates the first voltage and the second voltage in response to the operational amplifying signal; a reference voltage generating unit that outputs a reference voltage in response to the operational amplifying signal; and a unit that feedbacks the reference voltage to generate as the bias voltage.

Abstract: An internal voltage generator supplies a stable internal voltage without increasing standby current. The internal voltage generator includes an internal voltage driver for supplying an internal voltage based on a control signal, a feedback circuit for supplying a feedback voltage having a voltage level proportional to the internal voltage, a control signal generating circuit for generating the control signal to control the internal voltage driver such that the feedback voltage is maintained at a desired reference voltage, an auxiliary driving circuit for additionally supplying the internal voltage in response to the control signal, and an auxiliary driving control circuit for activating the auxiliary driving circuit only when it is expected to dissipate a large amount of a current.

Abstract: A band gap reference voltage generation circuit includes a reference voltage output node; a current distributing block coupled between the reference voltage output node and a ground voltage terminal, distributing current and supplying a first voltage and a second voltage; an operation amplifying block comparing the first voltage with the second voltage and outputting an operational amplification signal; a current supplying block coupled between a power supply voltage terminal and the reference voltage output node and supplying current to the current distributing block in response to the operational amplification signal; and a variable resistor coupled to an output node for the operational amplification signal.