Abstract: The present technology relates to an image sensor, an electronic apparatus, a comparator, and a drive method enabling achievement of a noise reduction while maintaining high speed of AD conversion. An ADC for performing AD conversion for an electrical signal output from a pixel includes a comparator that compares the electrical signal and a reference signal, a level of which is changed and a counter that counts time necessary for a change of the reference signal to a coincidence of the electrical signal and the reference signal on the basis of output signals from the comparator. The comparator includes a differential amplifier that outputs a comparison result signal indicating a comparison result obtained by comparing the electrical signal and the reference signal and a plurality of output amplifiers that outputs signals obtained by amplifying the comparison result signal output from the differential amplifier as the output signals at different timings.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: The present technology relates to an image sensor, an electronic apparatus, a comparator, and a drive method which enable achievement of a noise reduction while maintaining high speed of AD conversion. An ADC for performing AD conversion for an electrical signal output from a pixel includes a comparator that compares the electrical signal and a reference signal, a level of which is changed and a counter that counts time necessary for a change of the reference signal to a coincidence of the electrical signal and the reference signal on the basis of output signals from the comparator. The comparator includes a differential amplifier that outputs a comparison result signal indicating a comparison result obtained by comparing the electrical signal and the reference signal and a plurality of output amplifiers that outputs signals obtained by amplifying the comparison result signal output from the differential amplifier as the output signals at different timings.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: The present technology relates to an A/D converter, a solid-state image pickup device and a method of driving the same, and an electronic apparatus which are capable of reducing power consumption while reducing a circuit size. A comparator compares a reference voltage with an input voltage, the reference voltage having a ramp waveform whose voltage value varies with time, a lower-bit storage element holds a count value in a predetermined count pattern, based on an output signal from the comparator, a Gray code binary conversion circuit converts the count value in the count pattern held by the lower-bit storage element into binary data, and a storing operation control circuit supplies a pulse signal corresponding to the binary data obtained by conversion in the Gray code binary conversion circuit to a lower-bit U/D CNT. The present technology is applicable to, for example, an image sensor storing a count value in a storage element with use of a Gray code or a phase shift code as a clock signal.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device comprises a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: The present technology relates to an A/D converter, a solid-state image pickup device and a method of driving the same, and an electronic apparatus which are capable of reducing power consumption while reducing a circuit size. A comparator compares a reference voltage with an input voltage, the reference voltage having a ramp waveform whose voltage value varies with time, a lower-bit storage element holds a count value in a predetermined count pattern, based on an output signal from the comparator, a Gray code binary conversion circuit converts the count value in the count pattern held by the lower-bit storage element into binary data, and a storing operation control circuit supplies a pulse signal corresponding to the binary data obtained by conversion in the Gray code binary conversion circuit to a lower-bit U/D CNT. The present technology is applicable to, for example, an image sensor storing a count value in a storage element with use of a Gray code or a phase shift code as a clock signal.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device comprises a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.