Abstract: An audio system includes: a face data detection unit that detects face data on the basis of input image data; an acoustic coefficient acquisition unit that outputs an acoustic coefficient associated with face data output from the face data detection unit; and an acoustic coefficient application unit that performs, on an audio signal, acoustic processing based on an acoustic coefficient acquired by the acoustic coefficient acquisition unit.

Abstract: A semiconductor device having favorable display quality is provided. The semiconductor device is provided with a display portion, a line-of-sight sensor portion, a control portion, and an arithmetic portion. The line-of-sight sensor portion has a function of obtaining first information showing a direction of a user's line of sight. The arithmetic portion has a function of determining a first region including a gaze point of the user on the display portion with use of the first information and a function of increasing a definition of an image displayed on the first region. Light emitted from the display portion may be used to obtain the first information showing the direction of the line of sight.

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Abstract: A low-power semiconductor device is provided. A retention transistor is provided between a control circuit and an output transistor. An output terminal of the control circuit is electrically connected to one of a source and a drain of the retention transistor, and the other of the source and the drain of the retention transistor is electrically connected to a gate of the output transistor. A node to which the other of the source and the drain of the retention transistor and the gate of the output transistor are electrically connected is a retention node. When the retention transistor is in an on state, a potential corresponding to a potential output from the control circuit is written to the retention node. Then, when the retention transistor is in an off state, the potential of the retention node is retained. Thus, a gate potential of the output transistor can be kept at a constant value even when the control circuit is off.

Abstract: A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: A display device with a novel structure, a display system with a novel structure, or operation methods of them is/are provided. The operation method of the display system including a first display device and a second display device includes the following steps: a first step of connecting the first display device and the second display device by wireless communication; a second step of transmitting first image data displayed on the first display device to the second display device; a third step of displaying, on the second display device, second image data obtained by processing at least part of the first image data; a fourth step of stopping display on the first display device; and a fifth step of processing the second image data in accordance with a manipulation with the second display device.

Abstract: A reduction in concentration due to a change in an emotion is inhibited. A change in an emotion of the human is suitably reduced. Part (in particular, an eye or an eye and its vicinity) or the whole of a user's face is detected, a feature of the user's face is extracted from data on the detected part or whole of the face, and an emotion of the user is estimated from the extracted feature of the face. In the case where the estimated emotion is an emotion that might reduce concentration, for example, a stimulus is applied to the sense of sight, the sense of hearing, the sense of touch, the sense of smell, or the like of the user to recover the concentration of the user.

Abstract: A convenient electronic device is provided. An electronic device from which a user can easily read the displayed data is provided. The user can read data with a small motion. A housing of the electronic device includes a first portion positioned on a front surface of the housing, a second portion positioned on a side surface of the housing, a first band attachment portion, and a second band attachment portion. The second portion is configured to display an image. The first band attachment portion is positioned on the side surface on the top side when seen from the front surface side of the housing. The second portion and the second band attachment portion are positioned on the side surface on the bottom side when seen from the front surface side of the housing. The first portion is configured to display an image or includes at least one of an hour hand, a minute hand, and a second hand.

Abstract: A reduction in concentration due to a change in an emotion is inhibited. A change in an emotion of the human is suitably reduced. Part (in particular, an eye or an eye and its vicinity) or the whole of a user's face is detected, a feature of the user's face is extracted from data on the detected part or whole of the face, and an emotion of the user is estimated from the extracted feature of the face. In the case where the estimated emotion is an emotion that might reduce concentration, for example, a stimulus is applied to the sense of sight, the sense of hearing, the sense of touch, the sense of smell, or the like of the user to recover the concentration of the user.

Abstract: The present technology relates to a signal processing apparatus and method, and a program that make it possible to reduce an arithmetic operation amount. The signal processing apparatus performs, on the basis of audio object mute information indicative of whether or not a signal of an audio object is a mute signal, at least either one of a decoding process or a rendering process of an object signal of the audio object. The present technology can be applied to a signal processing apparatus.

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

Abstract: The present technology relates to a signal processing device, a signal processing method, and a program which are capable of improving encoding efficiency. The signal processing device includes a correction unit configured to correct an audio signal of an audio object based on a gain value included in metadata of the audio object, and a quantization unit configured to calculate auditory psychological parameters based on a signal obtained by the correction and to quantize the audio signal. The present technology can be applied to an encoding device.

Abstract: A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract: An electronic device having a noncontact input function is provided. The electronic device includes a display device and an input device and is capable of performing an input operation even without contact. The display device includes a light-emitting device and a light-receiving device in a display portion. The input device includes a light source. The light-receiving device has a function of detecting light emitted from the light source included in the input device. Infrared light that has substantially no spectral luminous efficacy is used as the light emitted from the light source included in the input device. Therefore, even irradiation of the display portion with the light at high luminance does not affect visual recognition of the display. This structure enables a noncontact input operation with respect to the display device.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.