Patents by Inventor Yoshiaki Oikawa

Yoshiaki Oikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220262374
    Abstract: The present technology relates to a signal processing device, a signal processing method, and a program for enabling reproduction of high-quality sounds with a low process load. The signal processing device includes a demultiplexing section that extracts encoded audio signals and overamplitude flags, which have been generated for a plurality of respective panel loudspeakers and each indicate whether overamplitude will occur in the corresponding panel loudspeaker, by demultiplexing encoded data, a decoding section that decodes the encoded audio signals, and an adjustment section that adjusts audio signals to be supplied to the plurality of panel loudspeakers on the basis of the overamplitude flags and audio signals resulting from the decoding. The present technology is applicable to an encoding device and a decoding device.
    Type: Application
    Filed: July 3, 2020
    Publication date: August 18, 2022
    Applicant: Sony Group Corporation
    Inventors: Yasuhiro Toguri, Yoshiaki Oikawa
  • Patent number: 11417687
    Abstract: A high-definition display device is provided. A display device with low power consumption is provided. A highly reliable display device is provided. The display device includes a first transistor and a display element electrically connected to the first transistor. The first transistor includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor and the second conductor are positioned over the first oxide to be apart from each other. The first insulator is positioned over the first conductor and the second conductor and includes an opening. The opening overlaps with a portion between the first conductor and the second conductor. The third conductor is positioned in the opening. The second insulator is positioned between the third conductor, and the first oxide, the first conductor, the second conductor, and the first insulator.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: August 16, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koji Kusunoki, Yoshiaki Oikawa, Kensuke Yoshizumi
  • Publication number: 20220236569
    Abstract: An electronic device with reduced power consumption is provided. A multifunction electronic device that is easily reduced in weight or size is provided. A composite device includes a sensor device and a display device. The sensor device includes a first communication portion and a sensor portion and can be worn on a human body. The display device includes a display portion, a second communication portion, and a control portion. The first communication portion has a function of transmitting a signal including information obtained by the sensor portion. The second communication portion has a function of receiving the signal. The control portion has a function of returning from a resting state in accordance with the signal. The control portion has a function of generating first image data on the basis of the information and outputting the first image data to the display portion. The display portion has a function of displaying an image on the basis of the first image data.
    Type: Application
    Filed: May 22, 2020
    Publication date: July 28, 2022
    Applicant: Semiconductor Energy Labotory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Takayuki IKEDA, Shuichi KATASUI, Yoshiaki OIKAWA, Kensuke YOSHIZUMI
  • Patent number: 11361807
    Abstract: A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: June 14, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hajime Kimura, Atsushi Miyaguchi, Yoshiaki Oikawa
  • Patent number: 11337022
    Abstract: The present technology relates to an information processing apparatus, a method, and a program that can create a great sense of realism with a small number of computations. An information processing apparatus includes a gain determination section that determines an attenuation level on the basis of a positional relationship between a given object and another object and determines a gain of a signal of the given object on the basis of the attenuation level. The present technology is applicable to a signal processing apparatus.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: May 17, 2022
    Assignee: Sony Corporation
    Inventors: Hiroyuki Honma, Toru Chinen, Yoshiaki Oikawa
  • Publication number: 20220086587
    Abstract: An audio system includes: a face data detection unit that detects face data on the basis of input image data; an acoustic coefficient acquisition unit that outputs an acoustic coefficient associated with face data output from the face data detection unit; and an acoustic coefficient application unit that performs, on an audio signal, acoustic processing based on an acoustic coefficient acquired by the acoustic coefficient acquisition unit.
    Type: Application
    Filed: December 11, 2019
    Publication date: March 17, 2022
    Applicant: Sony Group Corporation
    Inventors: Hiroyuki Honma, Toru Chinen, Yoshiaki Oikawa
  • Publication number: 20220052663
    Abstract: A low-power semiconductor device is provided. A retention transistor is provided between a control circuit and an output transistor. An output terminal of the control circuit is electrically connected to one of a source and a drain of the retention transistor, and the other of the source and the drain of the retention transistor is electrically connected to a gate of the output transistor. A node to which the other of the source and the drain of the retention transistor and the gate of the output transistor are electrically connected is a retention node. When the retention transistor is in an on state, a potential corresponding to a potential output from the control circuit is written to the retention node. Then, when the retention transistor is in an off state, the potential of the retention node is retained. Thus, a gate potential of the output transistor can be kept at a constant value even when the control circuit is off.
    Type: Application
    Filed: November 18, 2019
    Publication date: February 17, 2022
    Inventors: Keita SATO, Yuto YAKUBO, Yoshiaki OIKAWA, Shunpei YAMAZAKI
  • Publication number: 20220029120
    Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
    Type: Application
    Filed: October 7, 2021
    Publication date: January 27, 2022
    Inventors: Shingo EGUCHI, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
  • Publication number: 20220020381
    Abstract: The present technology relates to an information processing device and method and a program that make it possible to reduce the total number of objects while the influence on the sound quality is suppressed. The information processing device includes a pass-through object selection unit configured to acquire data of L objects and select, from the L objects, M pass-through objects whose data is to be outputted as it is, and an object generation unit configured to generate, on the basis of the data of multiple non-pass-through objects that are not the pass-through objects among the L objects, the data of N new objects, N being smaller than (L?M). The present technology can be applied to an information processing device.
    Type: Application
    Filed: November 6, 2019
    Publication date: January 20, 2022
    Applicant: Sony Group Corporation
    Inventors: Yuki Yamamoto, Toru Chinen, Minoru Tsuji, Yoshiaki Oikawa
  • Publication number: 20210384380
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Application
    Filed: August 18, 2021
    Publication date: December 9, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
  • Patent number: 11183600
    Abstract: A semiconductor device with high on-state current is provided.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: November 23, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Yoshiaki Oikawa
  • Publication number: 20210358766
    Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
    Type: Application
    Filed: May 20, 2021
    Publication date: November 18, 2021
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masashi TSUBUKU, Kengo AKIMOTO, Miyuki HOSOBA, Masayuki SAKAKURA, Yoshiaki OIKAWA
  • Publication number: 20210352408
    Abstract: The present technology relates to a signal processing apparatus and method, and a program that make it possible to reduce an arithmetic operation amount. The signal processing apparatus performs, on the basis of audio object mute information indicative of whether or not a signal of an audio object is a mute signal, at least either one of a decoding process or a rendering process of an object signal of the audio object. The present technology can be applied to a signal processing apparatus.
    Type: Application
    Filed: October 2, 2019
    Publication date: November 11, 2021
    Applicant: Sony Corporation
    Inventors: Hiroyuki Honma, Toru Chinen, Yoshiaki Oikawa
  • Patent number: 11171298
    Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: November 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
  • Publication number: 20210343307
    Abstract: Noise suppression performance is enhanced by performing appropriate noise suppression suitable for an environment of noise. Noise dictionary data read out from a noise database unit on the basis of installation environment information including information regarding a type of noise, and an orientation between a sound reception point and a noise source is acquired. Then, noise suppression processing is performed on a voice signal obtained by a microphone arranged at the sound reception point, using the acquired noise dictionary data.
    Type: Application
    Filed: August 23, 2019
    Publication date: November 4, 2021
    Inventors: RYUICHI NAMBA, SEIJI MIYAMA, YOSHIHIRO MANABE, YOSHIAKI OIKAWA
  • Patent number: 11127732
    Abstract: To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: September 21, 2021
    Inventors: Yoshiaki Oikawa, Shingo Eguchi
  • Publication number: 20210288183
    Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 16, 2021
    Inventors: Yoshiaki Oikawa, Nobuharu Ohsawa, Masami Jintyou, Yasutaka Nakazawa
  • Publication number: 20210279449
    Abstract: A reduction in concentration due to a change in an emotion is inhibited. A change in an emotion of the human is suitably reduced. Part (in particular, an eye or an eye and its vicinity) or the whole of a user's face is detected, a feature of the user's face is extracted from data on the detected part or whole of the face, and an emotion of the user is estimated from the extracted feature of the face. In the case where the estimated emotion is an emotion that might reduce concentration, for example, a stimulus is applied to the sense of sight, the sense of hearing, the sense of touch, the sense of smell, or the like of the user to recover the concentration of the user.
    Type: Application
    Filed: June 12, 2019
    Publication date: September 9, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Daisuke KUBOTA, Yoshiaki OIKAWA, Kensuke YOSHIZUMI
  • Publication number: 20210272614
    Abstract: A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 2, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshiaki OIKAWA, Atsushi MIYAGUCHI, Hideki UOCHI
  • Patent number: 11101407
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: August 24, 2021
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo