Abstract: A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.

Abstract: A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Abstract: Compensation accuracy is increased with respect to clip compensation in a case where signals from a plurality of microphones are subjected to an echo cancellation process. A signal processing device according to an embodiment of the present technology includes an echo cancellation unit that performs an echo cancellation process of canceling an output signal component from a speaker on signals from a plurality of microphones, a clip detection unit that performs a clip detection for signals from the plurality of microphones, and a clip compensation unit that compensates for a signal after the echo cancellation process of clipped one of the microphones on the basis of a signal of non-clipped one of the microphones.

Abstract: The present technology relates to a coding device, a coding method, a decoding device, a decoding method, and a program capable of improving coding efficiency. The coding device includes a time-frequency transform section that performs time-frequency transform using a transform window on an audio signal, and a coding section that performs Huffman coding on frequency spectrum information obtained by the time-frequency transform in a case in which a transform window length of the transform window is changed over from a small transform window length to a large transform window length, and that performs arithmetic coding on the frequency spectrum information in a case in which the transform window length of the transform window is not changed over from the small transform window length to the large transform window length. The present technology is applicable to a coding device and a decoding device.

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: The present technology relates to an information processing apparatus, a method, and a program that can create a great sense of realism with a small number of computations. An information processing apparatus includes a gain determination section that determines an attenuation level on the basis of a positional relationship between a given object and another object and determines a gain of a signal of the given object on the basis of the attenuation level. The present technology is applicable to a signal processing apparatus.

Abstract: A high-definition display device is provided. A display device with low power consumption is provided. A highly reliable display device is provided. The display device includes a first transistor and a display element electrically connected to the first transistor. The first transistor includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor and the second conductor are positioned over the first oxide to be apart from each other. The first insulator is positioned over the first conductor and the second conductor and includes an opening. The opening overlaps with a portion between the first conductor and the second conductor. The third conductor is positioned in the opening. The second insulator is positioned between the third conductor, and the first oxide, the first conductor, the second conductor, and the first insulator.

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract: A semiconductor device with high on-state current is provided.

Abstract: An information search system or an intellectual property information search system that is capable of highly accurate information search is provided. The intellectual property information search system includes a processing unit. First data and first reference analysis data are input to the processing unit. The first data includes first intellectual property information. The first reference analysis data includes plural pieces of second intellectual property information. The processing unit is configured to search the first reference analysis data for data similar to the first data to generate second data. The processing unit is configured to output the second data. The second data includes a piece of the second intellectual property information similar to the first intellectual property information and information showing the degree of similarity of the piece of the second intellectual property information to the first intellectual property information.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: The present technology relates to a signal processing device, a signal processing method, and a program that enable different sounds to be reproduced in a remote location and a neighboring location. A signal processing device includes: a remote filter unit configured to generate a remote sound reproduction signal for reproducing a sound in a remote audible region, by performing filter processing on a first sound source signal using a remote sound reproduction filter coefficient; and a neighboring filter unit configured to generate a neighboring sound reproduction signal for reproducing a sound in a neighboring audible region that is different from the remote audible region, by performing filter processing on a second sound source signal using a neighboring sound reproduction filter coefficient. The present technology can be applied to a remote-neighborhood separate sound field formation device.

Abstract: A convenient electronic device is provided. An electronic device from which a user can easily read the displayed data is provided. The user can read data with a small motion. A housing of the electronic device includes a first portion positioned on a front surface of the housing, a second portion positioned on a side surface of the housing, a first band attachment portion, and a second band attachment portion. The second portion is configured to display an image. The first band attachment portion is positioned on the side surface on the top side when seen from the front surface side of the housing. The second portion and the second band attachment portion are positioned on the side surface on the bottom side when seen from the front surface side of the housing. The first portion is configured to display an image or includes at least one of an hour hand, a minute hand, and a second hand.

Abstract: A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Abstract: The present technology relates to a signal processing device, a signal processing method, and a program that enable different sounds to be reproduced in a remote location and a neighboring location. A signal processing device includes: a remote filter unit configured to generate a remote sound reproduction signal for reproducing a sound in a remote audible region, by performing filter processing on a first sound source signal using a remote sound reproduction filter coefficient; and a neighboring filter unit configured to generate a neighboring sound reproduction signal for reproducing a sound in a neighboring audible region that is different from the remote audible region, by performing filter processing on a second sound source signal using a neighboring sound reproduction filter coefficient. The present technology can be applied to a remote-neighborhood separate sound field formation device.

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.