Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are fowled over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element faulted over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.

Abstract: To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

Abstract: To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film.

Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first conductor over a substrate; a first insulator over the first conductor; an oxide over the first insulator; a second insulator over the oxide; a second conductor over the second insulator; a third insulator over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the oxide, the first insulator, and the fourth insulator. The first insulator and the fifth insulator are in contact with each other in a region on the periphery of the side of the oxide. The oxide includes a first region where a channel is formed; a second region adjacent to the first region; a third region adjacent to the second region; and a fourth region adjacent to the third region.

Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.

Abstract: A change in electrical characteristics is suppressed and reliability is improved in a semiconductor device provided with a transistor including an oxide semiconductor. A semiconductor device includes a transistor. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a first buffer film over the oxide semiconductor film, a second buffer film over the oxide semiconductor film, a source electrode electrically connected with the oxide semiconductor film, and a drain electrode electrically connected with the oxide semiconductor film. The source electrode is electrically connected with the oxide semiconductor film through the first buffer film. The drain electrode is electrically connected with the oxide semiconductor film through the second buffer film.

Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

Abstract: A convenient electronic device is provided. An electronic device from which a user can easily read the displayed data is provided. The user can read data with a small motion. A housing of the electronic device includes a first portion positioned on a front surface of the housing, a second portion positioned on a side surface of the housing, a first band attachment portion, and a second band attachment portion. The second portion is configured to display an image. The first band attachment portion is positioned on the side surface on the top side when seen from the front surface side of the housing. The second portion and the second band attachment portion are positioned on the side surface on the bottom side when seen from the front surface side of the housing. The first portion is configured to display an image or includes at least one of an hour hand, a minute hand, and a second hand.

Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

Abstract: To provide a highly browsable data processing device, provide a highly portable data processing device, provide a data processing device which consumes low power, or provide a data processing device having high display quality, the data processing device includes a display portion having flexibility, a plurality of driver circuit portions arranged in the periphery of the display portion, a sensor portion discerning an external state of the display portion, an arithmetic portion supplying image data to the driver circuit portions, and a memory portion storing a program executed by the arithmetic portion. A first mode in which the display portion is unfolded or a second mode in which the display portion is folded is sensed by the sensor. Low power consumption processing and degradation correction processing are carried out by the program in accordance with the first mode or the second mode.

Abstract: A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.

Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

Abstract: Luminance variation due to change of current through a light-emitting element caused by change in environmental temperature is suppressed. Current through a first light-emitting element in a pixel portion is controlled by a monitor circuit. The monitor circuit includes a second light-emitting element, a transistor, a resistor, and an amplifier circuit. An anode of the second light-emitting element is connected to a source of the transistor. A cathode of the second light-emitting element is connected to the resistor and a first input terminal of the amplifier circuit. A second input terminal of the amplifier circuit is connected to a second power supply line. An output terminal of the amplifier circuit is connected to a gate of the transistor. The drain of the transistor is connected to a third power supply line. The transistor and the resistor each include an oxide semiconductor film.

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transimitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.