Abstract: An electronic component of the embodiment includes: a first substrate including first through holes, a first substrate plane, and a second substrate plane; electrode pairs provided in the first through hole and including a first electrode a second electrode, an insulating film, at least a part of the insulating film being provided between an inner side surface of each of the first through holes and an outer side surface of the first electrode; wherein a surface of the insulating film exposed from the first and second electrode in the vicinity of the first and third end is located outside of a first and a third surface, the first surface is an inner side surface of the second portion, and the third surface is an inner side surface of the fifth portion.

Abstract: A non-transitory computer-readable recording medium stores an information processing program for causing a computer to execute processing including: acquiring data that indicates a relationship between element actions for a plurality of element actions in an object period; acquiring an effective time that corresponds to an object action; and searching for a combination of two or more element actions that form the object action among the plurality of element actions for each divided section set by dividing the object period according to the acquired effective time on the basis of the acquired data.

Abstract: One object of the present invention is to provide an inhibitor for renal injuries induced by a hemolytic reaction. In this invention, cilastatin or a pharmaceutically acceptable salt thereof is used.

Abstract: A magnetic multilayer film for a magnetic memory element includes an amorphous heavy metal layer having a multilayer structure in which a plurality of first layers containing Hf alternate repeatedly with a plurality of second layers containing a heavy metal excluding Hf; and a recording layer that includes a ferromagnetic layer and that is adjacent to the heavy metal layer, the ferromagnetic layer having a variable magnetization direction.

Abstract: A crystalline form I of a compound represented by Formula (VII-1): having characteristic peaks appearing at lattice spacing (d) of 7.34, 5.66, 5.53, 5.30, 5.02, 4.66, 4.37, 4.28, 4.06, 3.68, 3.62, 3.47, 3.36, 3.30, 3.16, 3.11, 3.03, 2.99 and 2.50 ? in the powder X-ray diffraction pattern.

Abstract: A crystalline form I of a compound represented by Formula (VII-1): having characteristic peaks appearing at lattice spacing (d) of 7.34, 5.66, 5.53, 5.30, 5.02, 4.66, 4.37, 4.28, 4.06, 3.68, 3.62, 3.47, 3.36, 3.30, 3.16, 3.11, 3.03, 2.99 and 2.50 ? in the powder X-ray diffraction pattern.

Abstract: An automatic analyzer 101 includes a judgment part 118f which descends a probe 201 in the direction of a reagent 205 and suspends the downward movement of the probe 201 at a first position PT higher than a liquid level value P0 assumed to be a height of a liquid level by a first predetermined value Db. The judgment part 118f determines that the reagent 205 is in a normal state when the liquid level is not detected by an electrostatic capacity sensor 206 at the first position PT. Further, the judgment part 118f determines that the reagent 205 in an abnormal state when the liquid level is detected by the electrostatic capacity sensor 206 before reaching the first position PT. An automatic analyzer capable of reducing consumption of consumables produced at the time of reagent registration compared with conventional cases is provided.

Abstract: There is provided a stacked film that allows flowing a write current and achieves a high-density and/or high-speed memory and a magnetoresistive effect element using the stacked film. A magnetic stacked film 10 is formed of a three-layered structure that includes a first ferromagnetic layer 12, an antiferromagnetic coupling layer 10a provided on the first ferromagnetic layer 12, and a second ferromagnetic layer 16 provided on the antiferromagnetic coupling layer 10a. The antiferromagnetic coupling layer 10a includes a first non-magnetic layer 13, an interlayer coupling layer 14, and a second non-magnetic layer 15. The interlayer coupling layer 14 is selected from a metal or an alloy including at least any one of Ir, Ru, and Rh. The first non-magnetic layer 13 and the second non-magnetic layer 15 are selected from a metal or an alloy including Pt.

Abstract: A polarizer with a high degree of alignment and an image display device including the polarizer. The polarizer is formed of a polarizer-forming composition containing a liquid crystal compound, a first dichroic material, and a second dichroic material, in which the polarizer has an array structure formed of the first dichroic material and the second dichroic material.

Abstract: Provided are a tunnel junction stacked film having a high thermal stability, and a magnetic memory element and a magnetic memory using the tunnel junction stacked film. A tunnel junction stacked film 1 includes a recording layer 14 including a first ferromagnetic layer 24 containing boron, a tunnel junction layer 13 adjacent to the recording layer 14, and a reference layer 12 adjacent to the tunnel junction layer 13, wherein the first ferromagnetic layer 24 and the reference layer 12 are magnetized in a perpendicular direction with respect to a film surface, and the recording layer 14 includes a hafnium layer 25 adjacent to the first ferromagnetic layer 24.

Abstract: Provided are a magnetoresistive element in which the magnetization direction in a recording layer can be efficiently reversed with low resistance and without reducing reversal efficiency by a write current flowing in a heavy-metal layer; a magnetic memory; and an artificial intelligence system. A magnetoresistive element 10 includes: a heavy-metal layer 11 formed by stacking an Ir layer(s) 12 and a Pt layer(s) 13; a recording layer 16 provided to be opposed to the heavy-metal layer 11, and formed to include a first ferromagnetic layer having a reversible magnetization; a reference layer 18 formed to include a second ferromagnetic layer in which the magnetization direction is fixed; and a barrier layer 17 sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and formed of an insulator. The magnetization direction in the first ferromagnetic layer is reversed by a write current supplied to the heavy-metal layer 11.

Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Abstract: The automatic analyzer includes a light source 4a to perform measurement, a spectrophotometer 4, a reagent disk 9 to store a reagent bottle 10 in which the reagent is stored, a carriage device to carry the reagent bottle 10 to the reagent disk 9, a reagent preparation unit to perform preparatory operations required before the regent bottle 10 is used, and a control unit 21 to schedule the preparatory operations by the reagent preparation unit and the carriage operation by the carriage device such that the reagent bottle 10 is carried to the reagent disk 9 immediately after an operation accompanied with analysis by the light source 4a and the spectrophotometer 4 is suspended or ends.

Abstract: A magnetic multilayer film for a magnetic memory element includes an amorphous heavy metal layer having a multilayer structure in which a plurality of first layers containing Hf alternate repeatedly with a plurality of second layers containing a heavy metal excluding Hf; and a recording layer that includes a ferromagnetic layer and that is adjacent to the heavy metal layer, the ferromagnetic layer having a variable magnetization direction.

Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.

Abstract: Provided is an automatic analyzer capable of further reducing carryover between specimens. The automatic analyzer includes a first dispensing unit for dispensing a specimen related to a first analysis item group having a high possibility of carryover, a second dispensing unit for dispensing a specimen related to a second analysis item group having a low possibility of carryover, an input unit for receiving an input of analysis information related to a plurality of analysis items for a specimen, a classification unit for classifying the analysis information into the first analysis item group and the second analysis item group, and a determination unit for determining a dispensing sequence for each specimen for the first analysis item group and determining a dispensing sequence for each analysis item for the second analysis item group.

Abstract: When the type is to be changed from serum (preceding sample) to urine (current sample), “serum” is set to a preceding type and “urine” is set to a measurement type at number 1 in a condition number. At condition number 1, the wash type is pattern 1, with washing performed once with detergent 1. Where the preceding sample is serum and the current sample is CSF, the condition number is 2 and the wash type is pattern 2, with washing performed twice using detergent 1 and once with detergent 2. Where the preceding sample is urine and the current sample is CSF, the condition number is 3 and the wash type is pattern 3, with washing performed once with detergent 1, once with detergent 2, and once with water. In the case of pattern 4, washing is performed three times with detergent 1.

Abstract: A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.

Abstract: The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element.