Abstract: According to one embodiment, a sensor device is a sensor device that detects an acetyl compound in a sample and includes a storage unit that stores a sample, a sensor section that comes into contact with the sample in the storage unit and detects a change in ion density, and an amino compound fixed to the sensor section.

Abstract: An object of the present invention is to provide a polarizer having a high degree of alignment and an image display device including the polarizer. A polarizer of the present invention is a polarizer formed of a polarizer-forming composition containing a liquid crystal compound, a first dichroic material, and a second dichroic material, in which the polarizer has an array structure formed of the first dichroic material and the second dichroic material.

Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Abstract: The automatic analyzer includes a light source 4a to perform measurement, a spectrophotometer 4, a reagent disk 9 to store a reagent bottle 10 in which the reagent is stored, a carriage device to carry the reagent bottle 10 to the reagent disk 9, a reagent preparation unit to perform preparatory operations required before the regent bottle 10 is used, and a control unit 21 to schedule the preparatory operations by the reagent preparation unit and the carriage operation by the carriage device such that the reagent bottle 10 is carried to the reagent disk 9 immediately after an operation accompanied with analysis by the light source 4a and the spectrophotometer 4 is suspended or ends.

Abstract: A magnetic multilayer film for a magnetic memory element includes an amorphous heavy metal layer having a multilayer structure in which a plurality of first layers containing Hf alternate repeatedly with a plurality of second layers containing a heavy metal excluding Hf; and a recording layer that includes a ferromagnetic layer and that is adjacent to the heavy metal layer, the ferromagnetic layer having a variable magnetization direction.

Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.

Abstract: Provided is an automatic analyzer capable of further reducing carryover between specimens. The automatic analyzer includes a first dispensing unit for dispensing a specimen related to a first analysis item group having a high possibility of carryover, a second dispensing unit for dispensing a specimen related to a second analysis item group having a low possibility of carryover, an input unit for receiving an input of analysis information related to a plurality of analysis items for a specimen, a classification unit for classifying the analysis information into the first analysis item group and the second analysis item group, and a determination unit for determining a dispensing sequence for each specimen for the first analysis item group and determining a dispensing sequence for each analysis item for the second analysis item group.

Abstract: When the type is to be changed from serum (preceding sample) to urine (current sample), “serum” is set to a preceding type and “urine” is set to a measurement type at number 1 in a condition number. At condition number 1, the wash type is pattern 1, with washing performed once with detergent 1. Where the preceding sample is serum and the current sample is CSF, the condition number is 2 and the wash type is pattern 2, with washing performed twice using detergent 1 and once with detergent 2. Where the preceding sample is urine and the current sample is CSF, the condition number is 3 and the wash type is pattern 3, with washing performed once with detergent 1, once with detergent 2, and once with water. In the case of pattern 4, washing is performed three times with detergent 1.

Abstract: A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.

Abstract: The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element.

Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.

Abstract: Provided are a magnetic film, a magnetoresistance effect element and a magnetic memory which take advantages of atop-pinned structure and a bottom-pinned structure, maintain perpendicular magnetic anisotropy of magnetic layers in a fixing layer and allow strong pinning even in an annealing treatment after a protective film is formed. A fixing layer of a magnetic film has a basic configuration in which a first magnetic layer (21), a first non-magnetic layer (31), a first Pt layer (41), a second magnetic layer (22) disposed adjacent to each other in this order. The magnetization directions of the first magnetic layer (21) and the second magnetic layer (22) are both a direction perpendicular to the film surface, and an antiferromagnetic coupling is formed between the first magnetic layer (21) and the second magnetic layer (22).

Abstract: The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element.

Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Abstract: A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.

Abstract: An automatic analyzer is capable of ensuring sufficient nozzle cleaning and suppressing of deterioration in the accuracy of analysis. When it is judged that there remains no analysis item of the sample, a judgment is made on whether the sample dispensation quantity of the n-th sample dispensation is less than a dispensation quantity threshold value or not, and if less, a cleaning pattern is selected by making a judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value. If the sample dispensation quantity of the n-th sample dispensation is the dispensation quantity threshold value or more, another cleaning pattern selected by making the judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value.

Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Abstract: The automatic analyzer includes a light source 4a to perform measurement, a spectrophotometer 4, a reagent disk 9 to store a reagent bottle 10 in which the reagent is stored, a carriage device to carry the reagent bottle 10 to the reagent disk 9, a reagent preparation unit to perform preparatory operations required before the regent bottle 10 is used, and a control unit 21 to schedule the preparatory operations by the reagent preparation unit and the carriage operation by the carriage device such that the reagent bottle 10 is carried to the reagent disk 9 immediately after an operation accompanied with analysis by the light source 4a and the spectrophotometer 4 is suspended or ends.

Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.