Abstract: After an analysis start instruction is input in a state where a sample is not dispensed to all of reaction containers 104 mounted on a reaction disc 105, before completing an analysis preparation washing process for washing the reaction container 104 to be used in analyzing the sample to be first analyzed, a soaking and washing process for performing soaking and washing during a predetermined period of time is controlled to be started by dispensing a soaking and washing detergent to another reaction container 104 different from the reaction container 104. In this manner, the soaking and washing can be efficiently performed on the reaction container without hindering an analysis process.

Abstract: When the type is to be changed from serum (preceding sample) to urine (current sample), “serum” is set to a preceding type and “urine” is set to a measurement type at number 1 in a condition number. At condition number 1, the wash type is pattern 1, with washing performed once with detergent 1. Where the preceding sample is serum and the current sample is CSF, the condition number is 2 and the wash type is pattern 2, with washing performed twice using detergent 1 and once with detergent 2. Where the preceding sample is urine and the current sample is CSF, the condition number is 3 and the wash type is pattern 3, with washing performed once with detergent 1, once with detergent 2, and once with water. In the case of pattern 4, washing is performed three times with detergent 1.

Abstract: An automatic analyzer is capable of ensuring sufficient nozzle cleaning and suppressing of deterioration in the accuracy of analysis. When it is judged that there remains no analysis item of the sample, a judgment is made on whether the sample dispensation quantity of the n-th sample dispensation is less than a dispensation quantity threshold value or not, and if less, a cleaning pattern is selected by making a judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value. If the sample dispensation quantity of the n-th sample dispensation is the dispensation quantity threshold value or more, another cleaning pattern selected by making the judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value.

Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.

Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches a stop position on the dump side based on the posture of the boom and the posture of the bucket, are obtained, and an operation amount of the actuator for causing the bucket to tilt is changed based on the operation amount for raising the boom or the rising speed of the boom to thereby cause the bucket to tilt according to the operable amount.

Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches the stopper based on the posture of the boom and the posture of the bucket, are obtained, and an operating speed of the actuator is limited according to the operable amount of the actuator before the bucket reaches the stopper, and based on the operation amount for raising the boom or the rising speed of the boom obtained, a limit amount of the operating speed of the actuator is changed.

Abstract: An automated analyzer that can effectively reduce contamination of a diluted low-concentration specimen resulting from a high-concentration specimen not being diluted. The automated analyzer includes a specimen nozzle that performs both the function of pipetting a specimen from a specimen container accommodating the specimen and the function of pipetting a specimen diluted by the analyzer, and means for washing the specimen nozzle with a predetermined detergent. When a pipetting process of a high-concentration specimen not being diluted and a pipetting process of a low-concentration specimen diluted by the analyzer are consecutively performed for the same specimen by the specimen nozzle, between the pipetting process of a high-concentration specimen and the pipetting process of a low-concentration specimen, the analyzer performs a washing processing in which the specimen nozzle is washed with the predetermined detergent.

Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: A resistive change memory according to an embodiment includes: a memory cell including a resistive change element comprising a first and second terminals, and a semiconductor element, the semiconductor element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, and a third semiconductor layer of a second conductivity type that is different from the first conductivity type, the third semiconductor layer being disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being connected to the second terminal of the resistive change element; and a read unit configured to perform a read operation by applying a first read voltage between the first terminal and the second semiconductor layer, and then applying a second read voltage that is lower than the first read voltage between the first terminal and the second semiconductor layer.

Abstract: After an analysis start instruction is input in a state where a sample is not dispensed to all of reaction containers 104 mounted on a reaction disc 105, before completing an analysis preparation washing process for washing the reaction container 104 to be used in analyzing the sample to be first analyzed, a soaking and washing process for performing soaking and washing during a predetermined period of time is controlled to be started by dispensing a soaking and washing detergent to another reaction container 104 different from the reaction container 104. In this manner, the soaking and washing can be efficiently performed on the reaction container without hindering an analysis process.

Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches a stop position on the dump side based on the posture of the boom and the posture of the bucket, are obtained, and an operation amount of the actuator for causing the bucket to tilt is changed based on the operation amount for raising the boom or the rising speed of the boom to thereby cause the bucket to tilt according to the operable amount.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches the stopper based on the posture of the boom and the posture of the bucket, are obtained, and an operating speed of the actuator is limited according to the operable amount of the actuator before the bucket reaches the stopper, and based on the operation amount for raising the boom or the rising speed of the boom obtained, a limit amount of the operating speed of the actuator is changed.

Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: The present invention provides a control method and a control apparatus for a vehicle that make it possible to moderate or completely eliminate the impacts generated when the bucket is operated in a tilt direction, from a state in which the bucket in a dump position is forcibly actuated in the tilt direction and the bucket hydraulic cylinder is pressurized by the lifting operation of the boom and also to perform the boom lifting operation with good operability and workability.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.