Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: A resistive change memory according to an embodiment includes: a memory cell including a resistive change element comprising a first and second terminals, and a semiconductor element, the semiconductor element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, and a third semiconductor layer of a second conductivity type that is different from the first conductivity type, the third semiconductor layer being disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being connected to the second terminal of the resistive change element; and a read unit configured to perform a read operation by applying a first read voltage between the first terminal and the second semiconductor layer, and then applying a second read voltage that is lower than the first read voltage between the first terminal and the second semiconductor layer.

Abstract: After an analysis start instruction is input in a state where a sample is not dispensed to all of reaction containers 104 mounted on a reaction disc 105, before completing an analysis preparation washing process for washing the reaction container 104 to be used in analyzing the sample to be first analyzed, a soaking and washing process for performing soaking and washing during a predetermined period of time is controlled to be started by dispensing a soaking and washing detergent to another reaction container 104 different from the reaction container 104. In this manner, the soaking and washing can be efficiently performed on the reaction container without hindering an analysis process.

Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches a stop position on the dump side based on the posture of the boom and the posture of the bucket, are obtained, and an operation amount of the actuator for causing the bucket to tilt is changed based on the operation amount for raising the boom or the rising speed of the boom to thereby cause the bucket to tilt according to the operable amount.

Abstract: In controlling a work vehicle including a boom supported by a vehicle body and configured to turn, and a bucket supported by a side, away from the vehicle body, of the boom and configured to turn according to an operation of an actuator, an operation amount for raising the boom or a rising speed of the boom, and an operable amount that the actuator is able to operate before the bucket reaches the stopper based on the posture of the boom and the posture of the bucket, are obtained, and an operating speed of the actuator is limited according to the operable amount of the actuator before the bucket reaches the stopper, and based on the operation amount for raising the boom or the rising speed of the boom obtained, a limit amount of the operating speed of the actuator is changed.

Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: The present invention provides a control method and a control apparatus for a vehicle that make it possible to moderate or completely eliminate the impacts generated when the bucket is operated in a tilt direction, from a state in which the bucket in a dump position is forcibly actuated in the tilt direction and the bucket hydraulic cylinder is pressurized by the lifting operation of the boom and also to perform the boom lifting operation with good operability and workability.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: A resistive change memory according to an embodiment includes: a memory cell including a resistive change element comprising a first and second terminals, and a semiconductor element, the semiconductor element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, and a third semiconductor layer of a second conductivity type that is different from the first conductivity type, the third semiconductor layer being disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being connected to the second terminal of the resistive change element; and a read unit configured to perform a read operation by applying a first read voltage between the first terminal and the second semiconductor layer, and then applying a second read voltage that is lower than the first read voltage between the first terminal and the second semiconductor layer.

Abstract: An MOSFET according to an embodiment includes: a source and drain electrodes each including a magnetic layer; a gate insulating film; and a gate electrode provided on the gate insulating film, a junction resistance on a source electrode side being greater than that on a drain electrode side, when the MOSFET is of n-channel type, the source and drain electrodes contain a magnetic material in which a gap energy between a Fermi surface and a valence band maximum is greater than that between the Fermi surface and a conduction band minimum, and when the spin-transfer-torque switching MOSFET is of p-channel type, the source and drain electrodes containing a magnetic material in which a gap energy between a Fermi surface and a valence band maximum is less than that between the Fermi surface and a conduction band minimum.

Abstract: A work schedule of a user who uses an automatic analyzer is input from an input unit 120. A planning section 112 schedules in advance task events required for using the automatic analyzer. A schedule preparing section 113 prepares, from the work schedule input from the input unit and the task events scheduled by the planning section, a time-series task schedule as a list of tasks to be performed by the user within a period of time allocated to him or her. A display unit 130 displays the task schedule prepared by the schedule preparing section. The foregoing arrangements enable specific tasks to be performed by the user within the period of time allocated to him or her to be predicted in advance, the tasks to be efficiently scheduled according to the work schedule of the user, and each and every task to be performed without any omission.

Abstract: A spin MOSFET includes a first ferromagnetic layer having a fixed magnetization direction, a first tunnel barrier, a second ferromagnetic layer having a variable magnetization direction, and a nonmagnetic semiconductor layer provided in that order on a substrate. The nonmagnetic semiconductor layer has lower and upper faces and a side faces serving as a channel. A third ferromagnetic layer having a fixed magnetization direction is provided on the upper face of the nonmagnetic semiconductor layer, wherein the magnetization direction of each of the first to third ferromagnetic layers is in parallel or antiparallel to a direction from the third ferromagnetic layer to the first ferromagnetic layer. A nonmagnetic layer is provided on the third ferromagnetic layer, and a gate insulating film and gate electrode are provided in that order on the side face of the nonmagnetic semiconductor layer.

Abstract: A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.

Abstract: An automatic analyzer is capable of ensuring sufficient nozzle cleaning and suppressing of deterioration in the accuracy of analysis. When it is judged that there remains no analysis item of the sample, a judgment is made on whether the sample dispensation quantity of the n-th sample dispensation is less than a dispensation quantity threshold value or not, and if less, a cleaning pattern is selected by making a judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value. If the sample dispensation quantity of the n-th sample dispensation is the dispensation quantity threshold value or more, another cleaning pattern selected by making the judgment on whether or not all the sample dispensation quantities of the first through (n?1)-th sample dispensations are less than the dispensation quantity threshold value.

Abstract: A working vehicle has improved operability and working efficiency during loading. A loading operation detector detects the start of a loading operation based on at least two of the following: whether a boom lever has been operated in its raise direction; whether a boom is in an attitude set in advance; whether the boom angle is less than an upper limit; whether a speed ratio when a brake is OFF is greater than or equal to a predetermined value; whether a predetermined speed stage is set; whether the traveling range has been changed from reverse to forward; and whether the angular velocity of the boom is greater than or equal to a predetermined value. By increasing the discharge amount of a loader pump, and/or by supplying hydraulic fluid to a boom cylinder from a switch pump, a hydraulic fluid amount increase controller supplies more hydraulic fluid to the boom.

Abstract: The present invention provides an automated analyzer that can effectively reduce contamination of a diluted low-concentration specimen resulting from a high-concentration specimen not being diluted. The automated analyzer includes a specimen nozzle that performs both the function of pipetting a specimen from a specimen container accommodating the specimen and the function of pipetting a specimen diluted by the analyzer, and means for washing the specimen nozzle with a predetermined detergent. When a pipetting process of a high-concentration specimen not being diluted and a pipetting process of a low-concentration specimen diluted by the analyzer are consecutively performed for the same specimen by the specimen nozzle, between the pipetting process of a high-concentration specimen and the pipetting process of a low-concentration specimen, the analyzer performs a washing processing in which the specimen nozzle is washed with the predetermined detergent.

Abstract: A stacked structure according to an embodiment includes: a semiconductor layer; a first layer formed on the semiconductor layer, the first layer containing at least one element selected from Zr, Ti, and Hf, the first layer being not thinner than a monoatomic layer and not thicker than a pentatomic layer; a tunnel barrier layer formed on the first layer; and a magnetic layer formed on the tunnel barrier layer.